US4529619A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ohmic contacts for hydrogenated amorphous silicon
Assignee: Xerox Corp
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Filing: 1984-07-16
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Granted: 1985-07-16
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Expires: 2004-07-16
Abstract
Abstract A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.
Inventors
- 👤 Robert J. Nemanich
- 👤 Malcolm J. Thompson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:36
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D62/00; H10D62/80; H10D62/83; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
69 words
The method of forming an ohmic contact between a semiconductor and a substrate which comprises the following steps: (a) coating a film of palladium on the substrate, (b) overcoating the film of palladium with a film of amorphous silicon hydride, (c) heating said substrate, palladium and amorphous silicon hydride layer until a defective amorphous silicon film has been formed, and (d) coating said amorphous silicon film with the semiconductor.
Claim 2
Independent Claim
69 words
The method of forming an ohmic contact between a semiconductor and a substrate which comprises the following steps: (a) coating a film of palladium on the substrate, (b) overcoating the film of palladium with a film of amorphous silicon hydride, (c) heating said substrate, palladium and amorphous silicon hydride layer until a defective amorphous silicon film has been formed, and (d) coating said amorphous silicon film with the semiconductor.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said semiconductor is amorphous silicon hydride.
References Cited (Backward Citations)
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US4180596A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-15 | 1989-01-14 | 1989-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-15 | 1993-01-14 | 1993-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-15 | 1997-01-14 | 1997-07-16 | $7700.00 | Window Closed / Lapsed |