Amorphous silicon semiconductor device

Abstract

Abstract PURPOSE:To generate no stress on an amorphous Si semiconductor layer by a method wherein the amorphous Si semiconductor layer is formed on a supporting substance having linear expansion coefficient approximate to that of amorphous Si. CONSTITUTION:A supporting substance is composed of a material having linear expansion coefficient which is equal or approximate to that of amorphous Si. An electrode layer 3, an amorphous Si semiconductor layer 5 composing an active layer, and an electrode layer 6 consisting of a transparent conductive film or the like are successively stacked on the surface of the supporting substance through an impurity diffusion preventive layer 2 consisting of SiO2 formed at need, and a solar cell is formed. In this way, linear expansion coefficient of the supporting substance 1 and that of the layer 5 approximate to each other. Therefore, the layer 5 is formed and when the layer 5 is cooled up to room temperature, no high stress is generated on the layer 5. As the result, the layer 5 with low dark conductivity and high light response can be formed.

Inventors

• 👤 Masanari Shindo
• 👤 新藤　昌成
• 👤 Tatsuo Oota
• 👤 達男 太田
• 👤 Shigeru Sato
• 👤 滋 佐藤
• 👤 Tetsuo Shima
• 👤 徹男 嶋
• 👤 Isao Myokan
• 👤 明官　功

Bibliographic Details