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US4529455A
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Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
Assignee: Nokia Bell Labs
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Filing: 1983-10-28
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Granted: 1985-07-16
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Expires: 2003-10-28
Abstract
Abstract A molecular beam epitaxy method of growing Ge x Si 1-x films on silicon substrate is described.
Inventors
- 👤 John C. Bean
- 👤 Leonard C. Feldman
- 👤 Anthony T. Fiory
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/822; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/169; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
159 words
A method for growing, in a growth chamber, at least one layer of Ge x Si 1-x , x greater than or equal to 0.0 and less than or equal to 1.0, on a substrate comprising material selected from the group consisting of Si and Ge, comprising the steps of: cleaning said substrate to provide a surface having a low dislocation density; maintaining a pressure less than approximately 5×10 -8 Torr in said growth chamber; and growing said Ge x Si 1-x layer by adding particles by molecular beam epitaxy, x greater than 0.0 and less than or equal to 1.0 when said substrate is Si, and x greater than or equal to 0.0 and less than 1.0 when said substrate is Ge, said growing being at a temperature less than 550 degrees C. for values of x greater than 0.5 and at a temperature less than approximately 650 degrees C. for x less than or equal to 0.5.
Claim 2
Independent Claim
159 words
A method for growing, in a growth chamber, at least one layer of Ge x Si 1-x , x greater than or equal to 0.0 and less than or equal to 1.0, on a substrate comprising material selected from the group consisting of Si and Ge, comprising the steps of: cleaning said substrate to provide a surface having a low dislocation density; maintaining a pressure less than approximately 5×10 -8 Torr in said growth chamber; and growing said Ge x Si 1-x layer by adding particles by molecular beam epitaxy, x greater than 0.0 and less than or equal to 1.0 when said substrate is Si, and x greater than or equal to 0.0 and less than 1.0 when said substrate is Ge, said growing being at a temperature less than 550 degrees C. for values of x greater than 0.5 and at a temperature less than approximately 650 degrees C. for x less than or equal to 0.5.
Claim 3
Dependent Claim
13 words
A method as recited in claim 1 in which said substrate comprises Si.
Claim 4
Dependent Claim
28 words
A method as recited in claim 2 in which said growing is at a substrate temperature such that the particles have mobility such that islands do not grow.
Claim 5
Dependent Claim
19 words
A method as recited in claim 3 in which said temperature is under said solid line in FIG. 2.
Claim 6
Dependent Claim
13 words
A method as recited in claim 4 in which said layer is pseudomorphic.
Claim 7
Dependent Claim
23 words
A method as recited in claim 5 in which said layer has a thickness determined according to the solid line in FIG. 4.
Claim 8
Dependent Claim
22 words
A method as recited in claim 6 comprising the step of doping at least one of said Ge x Si 1-x layers.
Claim 9
Dependent Claim
20 words
A method as recited in claim 7 comprising the step of growing a plurality of Ge x Si 1-x layers.
Claim 10
Dependent Claim
33 words
A method as recited in claim 8 comprising the further step of growing a Si layer by molecular beam epitaxy prior to growing at least one of said Ge x Si 1-x layers.
Claim 11
Dependent Claim
27 words
A method as recited in claim 6 comprising the further step of growing a Si layer on at least one of said Ge x Si 1-x layers.
Claim 12
Dependent Claim
16 words
A method as recited in claim 10 comprising the further step of oxidizing said Si layer.
Claim 13
Dependent Claim
16 words
A method as recited in claim 10 comprising the further step of doping said Si layer.
Claim 14
Dependent Claim
13 words
A method as recited in claim 1 in which said substrate comprises Ge.
Claim 15
Dependent Claim
27 words
A method as recited in claim 13 in which said growing is at a temperature such that the particles have mobility such that islands do not grow.
Claim 16
Dependent Claim
13 words
A method as recited in claim 14 in which said layer is pseudomorphic.
Claim 17
Dependent Claim
23 words
A method as recited in claim 15 comprising the further step of growing a Si layer on said Ge x Si 1-x layer.
Claim 18
Dependent Claim
16 words
A method as recited in claim 16 comprising the further step of oxidizing said Si layer.
Claim 19
Dependent Claim
17 words
A method as recited in claim 15 comprising growing at least two Ge x Si 1-x layers.
References Cited (Backward Citations)
US3615855A
Cited
US4357183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-15 | 1989-01-14 | 1989-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-15 | 1993-01-14 | 1993-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-15 | 1997-01-14 | 1997-07-16 | $7700.00 | Window Closed / Lapsed |