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US4525436A
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Light energy conversion system
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1983-03-28
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Granted: 1985-06-25
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Expires: 2003-03-28
Abstract
Abstract First and second semiconductor photoelectric conversion structures, each having a PIN junction, are assembled as a unitary structure with a redox reaction chamber. Heavily doped N and P type semiconductor layers of the first and second semiconductor photoelectric conversion layers, respectively, are held in contact with first and second aqueous solutions contained in first and second cells of the redox reaction chamber. By interconnecting first and second electrodes connected to the P and N type semiconductor layers, respectively, of the first and second semiconductor photoelectric conversion structures, H 2 and O 2 gases are released from the first and second cells, respectively. Alternatively, electrical leads may be connected to the above N and P layers whereby the unitary structure may be employed as a source of electrical energy.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 09:08
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
351 words
A light energy conversion system comprising: a redox reaction chamber provided with first and second cells in intercommunication through a bridge and respectively containing first and second aqueous solutions of the same kind, and hydrogen and oxygen gas outlet means extending outwardly of the first and second cells, respectively; a first semiconductor photoelectric conversion structure having a P type first non-single-crystalline semiconductor layer, an I type second non-single-crystalline semiconductor layer formed on the first non-single-crystalline semiconductor layer, and a heavily doped, N type third non-single-crystalline semiconductor layer formed on the second non-single-crystalline semiconductor layer; a second semiconductor photoelectric conversion structure having an N type fourth non-single-crystalline semiconductor layer, an I type fifth non-single-crystalline semiconductor layer formed on the fourth non-single-crystalline semiconductor layer, and a heavily doped, P type sixth non-single-crystalline semiconductor layer formed on the fifth non-single-crystalline semiconductor layer; a first electrode connected to the first non-single-crystalline semiconductor layer of the first semiconductor photoelectric conversion structure; a second electrode connected to the fourth non-single-crystalline semiconductor layer of the second semiconductor photoelectric conversion structure and paired with the first electrode; and means for electrically interconnecting the first and second electrodes; wherein the first semiconductor photoelectric conversion structure is provided in the first cell (a) so that it forms a part of the first cell wall, (b) so that light is incident on the first semiconductor photoelectric conversion structure directly without passing through the first aqueous solution in the first cell, and (c) so that only the portion of the semiconductor photoelectric conversion structure on the side of the third non-single-crystalline semiconductor layer is held in contact with the first aqueous solution; and wherein the second semiconductor photoelectric conversion structure is provided in the second cell (a) so that it forms a part of the second cell wall, (b) so that light is incident on the second semiconductor photoelectric conversion structure directly without passing through the second aqueous solution in the second cell, and (c) so that the portion of the semiconductor photoelectric conversion structure on the side of the sixth non-single-crystalline semiconductor layer is held in contact with the second aqueous solution.
Claim 2
Dependent Claim
351 words
A light energy conversion system comprising: a redox reaction chamber provided with first and second cells in intercommunication through a bridge and respectively containing first and second aqueous solutions of the same kind, and hydrogen and oxygen gas outlet means extending outwardly of the first and second cells, respectively; a first semiconductor photoelectric conversion structure having a P type first non-single-crystalline semiconductor layer, an I type second non-single-crystalline semiconductor layer formed on the first non-single-crystalline semiconductor layer, and a heavily doped, N type third non-single-crystalline semiconductor layer formed on the second non-single-crystalline semiconductor layer; a second semiconductor photoelectric conversion structure having an N type fourth non-single-crystalline semiconductor layer, an I type fifth non-single-crystalline semiconductor layer formed on the fourth non-single-crystalline semiconductor layer, and a heavily doped, P type sixth non-single-crystalline semiconductor layer formed on the fifth non-single-crystalline semiconductor layer; a first electrode connected to the first non-single-crystalline semiconductor layer of the first semiconductor photoelectric conversion structure; a second electrode connected to the fourth non-single-crystalline semiconductor layer of the second semiconductor photoelectric conversion structure and paired with the first electrode; and means for electrically interconnecting the first and second electrodes; wherein the first semiconductor photoelectric conversion structure is provided in the first cell (a) so that it forms a part of the first cell wall, (b) so that light is incident on the first semiconductor photoelectric conversion structure directly without passing through the first aqueous solution in the first cell, and (c) so that only the portion of the semiconductor photoelectric conversion structure on the side of the third non-single-crystalline semiconductor layer is held in contact with the first aqueous solution; and wherein the second semiconductor photoelectric conversion structure is provided in the second cell (a) so that it forms a part of the second cell wall, (b) so that light is incident on the second semiconductor photoelectric conversion structure directly without passing through the second aqueous solution in the second cell, and (c) so that the portion of the semiconductor photoelectric conversion structure on the side of the sixth non-single-crystalline semiconductor layer is held in contact with the second aqueous solution.
Claim 3
Dependent Claim
41 words
A light energy conversion system according to claim 1 wherein the bridge in the redox reaction chamber is an aqueous solution bridge which permits the passage therethrough of the first and second aqueous solutions contained in the first and second cells.
Claim 4
Dependent Claim
40 words
A light energy conversion system according to claim 1 wherein the bridge in the redox reaction chamber is an ion bridge which permits the passage therethrough of ions generated in the aqueous solutions contained in the first and second cells.
Claim 5
Dependent Claim
38 words
A light energy conversion system according to claim 1, 2 or 3 wherein the first and second semiconductor photoelectric conversion structures are disposed side by side on the side of the same wall of the redox reaction chamber.
Claim 6
Dependent Claim
40 words
A light energy conversion system according to claim 4 wherein the third and sixth non-single-crystalline semiconductor layers of the first and second semiconductor photoelectric conversion structures are formed of Si 3 N 4-x (0<x<4) or Si x C 1-x (0<x<1).
Claim 7
Dependent Claim
46 words
A light energy conversion system according to claim 1, 2 or 3 wherein the third and sixth non-single-crystalline semiconductor layers of the first and second semiconductor photoelectric conversion structures are formed of Si, germanium silicide, Si 3 N 4-x (0<x<4), or Si x C 1-x (0<x<1).
Claim 8
Dependent Claim
30 words
A light energy conversion system according to claim 6 wherein the third non-single-crystalline semiconductor layer contains 0.01 to 3 mol% of Sb, As, or P as an N type impurity.
Claim 9
Dependent Claim
30 words
A light energy conversion system according to claim 6 wherein the sixth non-single-crystalline semiconductor layer contains 0.01 to 3 mol% of In, Ga, or Al as a P type impurity.
Claim 10
Dependent Claim
44 words
A light energy conversion system according to claim 1, 2 or 3 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.
Claim 11
Dependent Claim
37 words
A light energy conversion system according to claims 1, 2, or 3 which further comprises first and second leads connected to the third and sixth semiconductor layers of the first and second photoelectric conversion semiconductor structures, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-24 | 1988-12-24 | 1989-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-24 | 1992-12-24 | 1993-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-24 | 1996-12-24 | 1997-06-25 | $7700.00 | Window Closed / Lapsed |