Patent US4523211A successfully refreshed from Google Patents.
US4523211A
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Semiconductor device
Assignee: Futaba Corp
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Filing: 1983-03-08
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Granted: 1985-06-11
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Expires: 2003-03-08
Abstract
Abstract A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers, wherein at least one of the semiconductor layers is grown on the BeO film to be regulated by the crystalline structure of the beryllium oxide.
Inventors
- 👤 Kiyoshi Morimoto
- 👤 Toshinori Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:21
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D86/00; H10D88/00; H10D88/01; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3258; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10W; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
59 words
A semiconductor device comprising: a lower semiconductor layer; an electrical insulating layer made of a crystalline beryllium oxide thin film, said electrical insulating layer being deposited on said lower semiconductor layer; and an upper semiconductor layer, said upper semiconductor layer being grown on said electrical insulating layer to be regulated by the crystalline structure of beryllium oxide thin film.
Claim 2
Dependent Claim
59 words
A semiconductor device comprising: a lower semiconductor layer; an electrical insulating layer made of a crystalline beryllium oxide thin film, said electrical insulating layer being deposited on said lower semiconductor layer; and an upper semiconductor layer, said upper semiconductor layer being grown on said electrical insulating layer to be regulated by the crystalline structure of beryllium oxide thin film.
Claim 3
Dependent Claim
18 words
The semiconductor device as defined in claim 1, wherein said beryllium oxide film is a C-axis oriented film.
Claim 4
Dependent Claim
21 words
The semiconductor device as defined in claim 1, wherein each of said lower and upper semiconductor layers comprise fabricated semiconductor elements.
Claim 5
Dependent Claim
33 words
The semiconductor device as defined in claim 3, wherein said semiconductor elements are formed on a surface of said lower semiconductor layer, on which semiconductor elements said beryllium oxide film is then deposited.
Claim 6
Dependent Claim
20 words
The semiconductor device as defined in claim 1, wherein said lower semiconductor layer is made of a monocrystalline semiconductor wafer.
Claim 7
Dependent Claim
18 words
The semiconductor device as defined in claim 1, wherein said lower semiconductor layer is grown on a substrate.
Claim 8
Dependent Claim
100 words
A semiconductor device comprising: a lower semiconductor layer; a first electrical insulating layer made of a crystalline beryllium oxide film; said electrical insulating layer being deposited on said lower semiconductor layer; a substrate made of metallic or magnetic material, said substrate being deposited on the first electrical insulating layer; a second electrical insulating layer made of a crystalline beryllium oxide thin film, said electrical insulating layer being deposited on said substrate; and an upper semiconductor layer, said upper semiconductor layer being grown on said second electrical insulating layer to be regulated by the crystalline structure of beryllium oxide thin film.
Claim 9
Dependent Claim
100 words
A semiconductor device comprising: a lower semiconductor layer; a first electrical insulating layer made of a crystalline beryllium oxide film; said electrical insulating layer being deposited on said lower semiconductor layer; a substrate made of metallic or magnetic material, said substrate being deposited on the first electrical insulating layer; a second electrical insulating layer made of a crystalline beryllium oxide thin film, said electrical insulating layer being deposited on said substrate; and an upper semiconductor layer, said upper semiconductor layer being grown on said second electrical insulating layer to be regulated by the crystalline structure of beryllium oxide thin film.
Claim 10
Dependent Claim
18 words
The semiconductor device as defined in claim 7, wherein said beryllium oxide film is a C-axis oriented film.
Claim 11
Dependent Claim
22 words
The semiconductor device as defined in claim 7, wherein each of said lower and upper semiconductor layers independently are fabricated semiconductor elements.
Claim 12
Dependent Claim
33 words
The semiconductor device as defined in claim 9, wherein said semiconductor elements are formed on a surface of said lower semiconductor layer on which semiconductors elements said beryllium oxide film is then deposited.
Claim 13
Dependent Claim
35 words
The semiconductor device as defined in claim 9, wherein said substrate is provided with holes for permitting conductors for electrically connecting said semiconductor elements formed on said upper and lower semiconductor layers to pass therethrough.
Claim 14
Dependent Claim
20 words
The semiconductor device as defined in claim 7, wherein said lower semiconductor layer is made of a monocrystalline semiconductor wafer.
Claim 15
Dependent Claim
17 words
The semiconductor device as defined in claim 7, wherein said lower semiconductor is grown on a substrate.
Claim 16
Dependent Claim
34 words
The device of claim 1, wherein the lower and upper semiconductor layers independently can be made of a component selected from the group consisting of silicon, GaAs, GaSb, GaP and InSb, or mixtures thereof.
Claim 17
Dependent Claim
34 words
The device of claim 7, wherein the lower and upper semiconductor layers independently can be made of a component selected from the group consisting of silicon, GaAs, GaSb, GaP and InSb, or mixtures thereof.
Claim 18
Dependent Claim
17 words
The device of claim 1, wherein all the layers may independently be formed by ion beam deposition.
Claim 19
Dependent Claim
17 words
The device of claim 7, wherein all the layers may independently be formed by ion beam deposition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-10 | 1988-12-10 | 1989-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-10 | 1992-12-10 | 1993-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-10 | 1996-12-10 | 1997-06-11 | $7700.00 | Window Closed / Lapsed |