High speed sense amplifier

Claim 2

In combination with a differential stage having first and second inputs adapted to receive complementary input signals and having first and second differential outputs, the improvement comprising: first and second transistors, each transistor having first and second electrodes defining the ends of a conduction path and a control electrode; means connecting the conduction path of said first transistor between said first input and said second differential output; means connecting the conduction path of said second transistor between said second input and said first differential output; means connecting the control electrode of said first transistor to said first differential output; and means connecting the control electrode of said second transistor to said second differential output.

Claim 3

The combination as claimed in claim 1 wherein said first and second transistors are insulated-gate field-effect transistors (IGFETs) of first conductivity type and wherein said differential stage includes a third and a fourth IGFET of second conductivity type; each one of said IGFETs having a conduction path and a control electrode for controlling the conductivity of its conduction path; wherein the conduction path of said third IGFET is connected between said first differential output and a common node; wherein the conduction path of said fourth IGFET is connected between said second differential output and said common node; and wherein the control electrode of said third IGFET is connected to said first input, and the control electrode of said fourth IGFET is connected to said second input.

Claim 4

A sense amplifier comprising: first and second lines adapted to receive complementary information; first and second transistors of first conductivity type, and third and fourth transistors of second conductivity type; each transistor having first and second electrodes defining the ends of a conduction path and a control electrode; means connecting the control electrode of said first transistor to said first line and the control electrode of said second transistor to said second line; a current conducting means connected between the first electrodes of said first and second transistors and a first point of operating potential; means connecting the control electrode of said third transistor and the second electrode of said fourth transistor to the second electrode of said second transistor; means connecting the control electrode of said fourth transistor and the second electrode of said third transistor to the second electrode of said first transistor; and means connecting the first electrode of said fourth transistor to said first line and the first electrode of said third transistor to said second line.

Claim 5

A sense amplifier comprising: first and second lines adapted to receive complementary information; first and second transistors of first conductivity type, and third and fourth transistors of second conductivity type; each transistor having first and second electrodes defining the ends of a conduction path and a control electrode; means connecting the control electrode of said first transistor to said first line and the control electrode of said second transistor to said second line; a current conducting means connected between the first electrodes of said first and second transistors and a first point of operating potential; means connecting the control electrode of said third transistor and the second electrode of said fourth transistor to the second electrode of said second transistor; means connecting the control electrode of said fourth transistor and the second electrode of said third transistor to the second electrode of said first transistor; and means connecting the first electrode of said fourth transistor to said first line and the first electrode of said third transistor to said second line.

Claim 6

The sense amplifier as claimed in claim 3 further including fifth and sixth transistors of said second conductivity type, said fifth and sixth transistors having their conduction paths connected between said first and second lines, respectively, and a second point of operating potential.

Claim 7

The sense amplifier as claimed in claim 4, further including a seventh transistor of said second conductivity type having its conduction path connected between the second electrodes of said first and second transistors; and means for applying a signal to the control electrodes of said fifth, sixth and seventh transistors for selectively turning said transistors on or off.

Claim 8

The sense amplifier as claimed in claim 5 wherein said current conduction means includes an eighth transistor having a conduction path and a control electrode for controlling its conductivity, and wherein its conduction path is connected at one end to the first electrodes of said first and second transistors and at its other end to said first point of operating potential.

Claim 9

The combination as claimed in claim 6 further including first and second diodes, said first diode being connected between said second point of operating potential and said first line and said second diode being connected between said second point of operating potential and said second line, said first and second diode being poled to conduct in the same direction as said fifth and sixth transistors.

Claim 10

The combination as claimed in claim 6 further including ninth and tenth transistors, the control electrode of said ninth transistor and the second electrode of said tenth transistor being connected to said second electrode of said second transistor, and the control electrode of said tenth transistor and the second electrode of said ninth transistor being connected to the second electrode of said first transistor; and means connecting the first electrodes of said ninth and tenth transistor to said second point of operating potential.

Claim 11

In combination with a differential stage having a linear region and being biased to operate in said linear region, said differential stage having first and second inputs adapted to receive complementary input signals and having first and second differential outputs, the improvement comprising: a common gate stage biased to operate in the saturation region or in the linear region close to the saturation region, said common gate stage being responsive to the signals applied between said first and second inputs; and means connecting said common gate stage between said first and second differential outputs.

Claim 12

In combination with a differential stage having a linear region and being biased to operate in said linear region, said differential stage having first and second inputs adapted to receive complementary input signals and having first and second differential outputs, the improvement comprising: a common gate stage biased to operate in the saturation region or in the linear region close to the saturation region, said common gate stage being responsive to the signals applied between said first and second inputs; and means connecting said common gate stage between said first and second differential outputs.

Claim 13

The improvement as claimed in claim 9 wherein said common gate stage includes first and second transistors, each transistor having first and second electrodes defining the ends of a conduction path and a control electrode; wherein the conduction path of said first transistor is connected between said first differential output and said second input, wherein the conduction path of said second transistor is connected between said second differential output and said first input; and wherein the control electrode of said first transistor is connected to said second differential output, and the control electrode of said second transistor is connected to said first differential output.