US4521443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated optical waveguide fabrication by ion implantation
Assignee: Northrop Grumman Corp
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Filing: 1984-05-07
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Granted: 1985-06-04
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Expires: 2004-05-07
Abstract
Abstract A method for fabricating optical waveguides and other optical devices. Nitrogen ions are implanted by ion bombardment in a substrate composed of silicon dioxide. Damage to the atomic structure caused by the bombardment is removed by annealing to obtain a low-loss device. The chemical interaction of the nitrogen ions with the silicon dioxide creates an implanted region having an increased index of refraction, which implanted region retains the increased refractive index after annealing.
Inventors
- 👤 Ishverlal K. Naik
- 👤 Ronald G. Eguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:07
CPC Classifications
C; C03; C03C; C03C23/00; C03C23/0005; C03C23/0055; C23; C23C; C23C14/00; C23C14/22; C23C14/48; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/134; G02B6/1347
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
78 words
A method for fabricating an optical device in a silicon dioxide substrate, comprising: bombarding a selected area of the substrate with nitrogen ions to implant the ions in a region of the substrate below the selected area so as to raise the index of refraction of the region; and heating the substrate to anneal the substrate so as to repair a substantial portion of any damage to the atomic structure of the substrate caused by the ion bombardment.
Claim 2
Independent Claim
78 words
A method for fabricating an optical device in a silicon dioxide substrate, comprising: bombarding a selected area of the substrate with nitrogen ions to implant the ions in a region of the substrate below the selected area so as to raise the index of refraction of the region; and heating the substrate to anneal the substrate so as to repair a substantial portion of any damage to the atomic structure of the substrate caused by the ion bombardment.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the substrate is composed of amorphous silicon dioxide.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the heating step is performed subsequent to the bombarding step.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein the heating step and the bombarding step are performed simultaneously.
Claim 6
Dependent Claim
40 words
The method of claim 1 wherein the heating step consists essentially of heating the substrate to a temperature in the range of 300 to 600 degrees Celsius for a time period in the range of 15 minutes to 3 hours.
Claim 7
Dependent Claim
43 words
The method of claim 1 wherein the bombarding step comprises bombarding the selected area with nitrogen ions having an energy in the range of 100 to 1000 KeV and a dosage in the range of one to thirty million ions per square centimeter.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-03 | 1988-12-03 | 1989-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-03 | 1992-12-03 | 1993-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-03 | 1996-12-03 | 1997-06-04 | $7700.00 | Window Closed / Lapsed |