Semiconductor device having improved lead attachment

Claim 2

A semiconductor device comprising a semiconductor substrate having an electrical circuit formed therein, a plurality of recessed regions formed in peripheral surface portions of said substrate, a second substrate affixed to said semiconductor substrate and overlying said recessed regions, said recessed regions and said second substrate defining tunnels for receiving electrical leads, contact means in said recessed regions and extending to said electrical circuit, a plurality of external electrical leads with end portions positioned in said recesses, and means for bonding said end portions to said contact means.

Claim 3

The semiconductor device as defined by claim 1 wherein said second substrate hermetically seals said electrical circuit and said device comprises a pressure sensor.

Claim 4

The semiconductor device as defined by claim 1, or 2 wherein said semiconductor substrate comprises monocyrstalline silicon having a [100] surface and said recessed regions are V grooves formed by anisotropic etch of said [100] surface.

Claim 5

The semiconductor device as defined by claim 1 wherein said contact means includes a doped layer in said recessed regions and metal layers on the surfaces of said recessed regions.

Claim 6

The semiconductor device as defined by claim 4 wherein said metal layer comprises chrome-gold, said electrical leads comprise pre-tinned wires, and said means for bonding said leads to said metal layers comprises solder.

Claim 7

A semiconductor pressure transducer comprising a monocyrstalline silicon substrate having first and second major surfaces with [100] crystalline orientation, a first recessed region in a first major surface, an electrical circuit formed in said first recessed region, a second recessed region in said second major surface thereby defining a diaphragm between said first recessed region and said second recessed region, a glass cover bonded to said first major surface and hermetically sealing said electrical circuit, a plurality of recessed contact regions formed in peripheral portions of said first major surface, said recessed contact regions and said glass cover defining tunnels for receiving external wire leads, and conductive regions formed in said first major surface and interconnecting said resistive circuit and said plurality of recessed contact regions.

Claim 8

A semiconductor pressure transducer comprising a monocyrstalline silicon substrate having first and second major surfaces with [100] crystalline orientation, a first recessed region in a first major surface, an electrical circuit formed in said first recessed region, a second recessed region in said second major surface thereby defining a diaphragm between said first recessed region and said second recessed region, a glass cover bonded to said first major surface and hermetically sealing said electrical circuit, a plurality of recessed contact regions formed in peripheral portions of said first major surface, said recessed contact regions and said glass cover defining tunnels for receiving external wire leads, and conductive regions formed in said first major surface and interconnecting said resistive circuit and said plurality of recessed contact regions.

Claim 9

The semiconductor pressure transducer as defined by claim 6 wherein said recessed contact regions include metal layers formed on the surfaces thereof for solder bonding external leads to said recessed contact regions.