Semiconductor device

Claim 1

A TRANSISTOR DEVICE COMPRISING A FLAT SUPPORT-BLOCK MADE OF CERAMIC INSULATING MATERIAL, A RECTANGULAR CHANNEL IN ONE SURFACE OF SAID BLOCK, SAID CHANNEL FORMING RAISED LANDS AT THE SIDES OF SAID CHANNEL AND BEING OPEN AT BOTH OF ITS ENDS, A SEPARATE METAL COATING ON EACH OF SAID LANDS AND ON THE BOTTOM SURFACE OF SAID CHANNEL, A SEMICONDUCTOR BODY COMPRISING A TRANSISTOR IN THE FORM OF A WATER WHOSE BOTTOM SURFACES IS ITS COLLECTOR ELECTRODE AND WHICH HAS BASE AND EMITTER ELECTRODES ON ITS UPPER SURFACE, SAID BOTTOM SURFACE OF SAID WAFER BEING BONDED TO THE METAL COATING ON THE BOTTTOM OF SAID CHANNEL, A PAIR OF ELECTRODE WIRES, ONE OF SAID WIRES BEING CONNECTED BETWEEN ONE OF SAID LAND COATINGS AND SAID BASE ELECTRODE, AND THE OTHER OF SAID WIRES BEING CONNECTED BETWEEN THE OTHER OF SAID LAND COATINGS AND SAID EMITTER ELECTRODE, THREE EXTERNAL LEAD WIRES, EACH HAVING ONE END BONDED TO A SEPARATE ONE OF SAID COATINGS AND ITS OTHER END EXTENDING BEYOND SAID SUPPORT BLOCK, EACH OF SAID LEAD WIRES HAVING A THICKNESS SUBSTANTIALLY GREATER THAN THE THICKNESS OF SAID ELECTRODE WIRES.