US4508931A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
Assignee: Stauffer Chemical Co
•
Filing: 1982-11-16
•
Granted: 1985-04-02
•
Expires: 2002-11-16
Abstract
Abstract High phosphorus polyphosphides, namely MPx, where M is an alkali metal (Li, Na, K, Rb, and Cs) or metals mimicking the bonding behavior of an alkali metal, and where x=7 to 15 or very much greater than 15 (new forms of phosphorus) are useful semiconductors in their crystalline, polycrystalline and amorphous forms (boules and films). MP15 appears to have the best properties and KP15 is the easier to synthesize. P may include other pnictides as well as other trivalent atomic species. Resistance lowering may be accomplished by doping with Ni, Fe, Cr, and other metals having occupied d or f outer electronic levels; or by incorporation of As and other pnictides. Rectifying Schottky junction devices doped with Ni and employing Ni as a back contact comprise Cu, Al, Mg, Ni, Au, Ag, and Ti as junction forming top contacts. Photovoltaic, photoresistive, and photoluminescent devices are also disclosed. All semiconductor applications appear feasible. Single and multiple source vapor transport, condensed phase, melt quench, flash evaporation, chemical vapor deposition, and molecular flow deposition may be employed in synthesizing these materials. Vapor transport may be employed to purify phosphorus. The materials may be employed as protective coatings, optical coatings, fire retardants, fillers and reinforcing fillers for plastics and glasses, antireflection coatings for infrared optics, infrared transmitting windows, and optical rotators.
Inventors
- 👤 Christian G. Michel
- 👤 Rozalie Schachter
- 👤 Mark A. Kuck
- 👤 John A. Baumann
- 👤 Paul M. Raccah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:50
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C01; C01B; C01B25/00; C01B25/003; C01B25/02; C01B25/04; C01B25/08; C01B25/081; C01B25/088; C03; C03C; C03C17/00; C03C17/22; C09; C09K; C09K21/00; C09K21/02; C09K21/04; C23; C23C; C23C14/00; C23C14/06; C23C14/22; C23C14/54; C23C14/541; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C03C2217/00; C03C2217/20; C03C2217/28; C03C2217/283; C03C2217/29; C03C2218/00; C03C2218/10; C03C2218/15; H; H10; H10K; H10K10/00; H10K10/40; H10K10/46; H10K10/462
Claims Analysis
Total Claims: 195
Claim 1
Independent Claim
83 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and containing alkali metal atoms which atoms are bonded to phosphorus, atoms and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 2
Independent Claim
83 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and containing alkali metal atoms which atoms are bonded to phosphorus, atoms and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 3
Dependent Claim
52 words
The method of claim 1 wherein the number of consecutive phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to provide said material with a band gap which falls within the range of 1.4 to 2.2 eV and to provide said material with a diffusion length greater than 1 micron.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein said band gap is substantially equal to 1.8 eV.
Claim 5
Independent Claim
18 words
The method of claims 1, 2, or 3 wherein said atoms comprise a single metal from said group.
Claim 6
Independent Claim
20 words
The method of claims 1, 2, or 3 wherein said atoms comprise at least two different metals from said group.
Claim 7
Independent Claim
13 words
The method of claims 1, 2, or 3 wherein said polyphosphide is crystalline.
Claim 8
Independent Claim
13 words
The method of claims 1, 2, or 3 wherein said polyphosphide is amorphous.
Claim 9
Dependent Claim
26 words
The method of claim 6 wherein at least 7 phosphorus atoms are bonded to other phosphorus atoms per each metal atom bonded to a phosphorus atom.
Claim 10
Dependent Claim
24 words
The method of claim 6 wherein 15 phosphorus atoms are bonded to other phosphorus atoms per each metal atom bonded to a phosphorus atom.
Claim 11
Dependent Claim
20 words
The method of claim 7 where said amorphous polyphosphide contains at least 500 phosphorus atoms per each metal atom bonded.
Claim 12
Independent Claim
23 words
The method of claims 1, 2, or 3 wherein said polyphosphide has the formula MP x and x is substantially equal to 15.
Claim 13
Independent Claim
22 words
The method of claims 1, 2, or 3 wherein said polyphosphide has the formula MP x and x is greater than 15.
Claim 14
Independent Claim
104 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atoms conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 15
Independent Claim
104 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atoms conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 16
Dependent Claim
26 words
The method of claim 13 wherein the skeleton of each unit forms a tubular array of phosphorus and said atoms are positioned between said tubular arrays.
Claim 17
Dependent Claim
19 words
The method of claim 14 wherein the longitudinal axes of said tubular arrays are substantially parallel to one another.
Claim 18
Independent Claim
23 words
The method of claims 13, 14 or 15 wherein said polyphosphide has the formula MP x and x is substantially equal to 15.
Claim 19
Independent Claim
22 words
The method of claims, 13, 14 or 15 wherein said polyphosphide has the formula MP x and x is greater than 15.
Claim 20
Independent Claim
89 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal and x is the atom ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 21
Independent Claim
89 words
A method of forming a semiconductor device comprising the steps of: (a) providing a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal and x is the atom ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV; and (b) attaching to said material means for electrically communicating with said material to utilize said material as a semiconductor.
Claim 22
Dependent Claim
16 words
The method of claim 18 wherein said metal M comprises a single metal from said group.
Claim 23
Dependent Claim
18 words
The method of claim 18 wherein said metal M comprises at least two different metals from said group.
Claim 24
Dependent Claim
35 words
The method of claim 18 wherein said polyphosphide has the formula [M y M 1-y ]P x , wherein M and M' are alkali metals, and y is a number from 0 to 1 inclusive.
Claim 25
Independent Claim
40 words
The method of claims 18, 19, or 20 wherein said polyphosphide may be defined by the formula [MP 7 ] a [P 8 ] b , wherein b:a is the atom ratio of [P 8 ] to [MP 7 ].
Claim 26
Independent Claim
21 words
The method of claims 18, 19, or 20 wherein said band gap is within the range of 1.4 to 2.2 eV.
Claim 27
Independent Claim
18 words
The method of claims 18, 19, or 20, wherein said band gap is substantially equal to 1.8 eV.
Claim 28
Independent Claim
13 words
The method of claims 18, 19, or 20 wherein said polyphosphide is crystalline.
Claim 29
Independent Claim
13 words
The method of claims 18, 19, or 20 wherein said polyphosphide is amorphous.
Claim 30
Independent Claim
18 words
The method of claims 18, 19, or 20 wherein x is within the range of 7 to 15.
Claim 31
Dependent Claim
15 words
The method of claim 25 wherein x is within the range of 7 to 15.
Claim 32
Independent Claim
12 words
The method of claims 18, 19, or 20 wherein x is 15.
Claim 33
Dependent Claim
9 words
The method of claim 25 wherein x is 15.
Claim 34
Dependent Claim
14 words
The method of claim 18, 19, or 20 wherein x is at least 500.
Claim 35
Dependent Claim
11 words
The method of claim 26 wherein x is at least 500.
Claim 36
Independent Claim
14 words
The method of claims 18, 19, or 20 wherein x is greater than 15.
Claim 37
Independent Claim
64 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting.
Claim 38
Independent Claim
64 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting.
Claim 39
Independent Claim
86 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atoms conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds.
Claim 40
Independent Claim
86 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atoms conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds.
Claim 41
Independent Claim
69 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal, x is the atom ratio of P to M, x being at least 7, and wherein said material has a band gap within the range of from 1 to 3 eV.
Claim 42
Independent Claim
69 words
A method of conducting electrical current comprising the step of applying an electrical potential to a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal, x is the atom ratio of P to M, x being at least 7, and wherein said material has a band gap within the range of from 1 to 3 eV.
Claim 43
Independent Claim
75 words
A method of generating electrical potential between spared electrodes, comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) subjecting said material to radiant energy.
Claim 44
Independent Claim
75 words
A method of generating electrical potential between spared electrodes, comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) subjecting said material to radiant energy.
Claim 45
Independent Claim
97 words
A method of generating electrical potential between spaced electrodes, comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as oen component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) subjecting said material to radiant energy.
Claim 46
Independent Claim
97 words
A method of generating electrical potential between spaced electrodes, comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as oen component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) subjecting said material to radiant energy.
Claim 47
Independent Claim
81 words
A method of generating electrical potential between spaced electrodes comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x where M is an alkali metal, and x is the atom ratio of P to M, x being at least 7, and wherein said material has a band gap within the range of from 1 to 3 eV; and (b) subjecting said material to radiant energy.
Claim 48
Independent Claim
81 words
A method of generating electrical potential between spaced electrodes comprising the steps of: (a) attaching said electrodes to a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x where M is an alkali metal, and x is the atom ratio of P to M, x being at least 7, and wherein said material has a band gap within the range of from 1 to 3 eV; and (b) subjecting said material to radiant energy.
Claim 49
Independent Claim
14 words
The method of claims 37, 38 or 39 where said radiant energy is sunlight.
Claim 50
Independent Claim
54 words
The method of claims 34 or 37 wherein the number of consecutive phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to provide said material with a band gap which falls within the range of 1.4 to 2.2 eV and a photoconductivity ratio which falls within the range of 100 to 10,000.
Claim 51
Independent Claim
17 words
The method of claims 34 or 37 wherein said material has a band gap of 1.8 eV.
Claim 52
Independent Claim
17 words
The method of claims 34 or 37 wherein said atoms comprise a single metal from said group.
Claim 53
Independent Claim
19 words
The method of claims 34 or 37 wherein said atoms comprise at least two different metals from said group.
Claim 54
Independent Claim
12 words
The method of claims 34 or 37 wherein said polyphosphide is crystalline.
Claim 55
Independent Claim
12 words
The method of claims 34 or 37 wherein said polyphosphide is amorphous.
Claim 56
Independent Claim
30 words
The method of claims 35 or 38 wherein the skeleton of each unit forms a tubular array of phosphorus and said alkali metal atoms are positioned between said tubular arrays.
Claim 57
Dependent Claim
19 words
The method of claim 47 wherein the longitudinal axes of said tubular arrays are substantially parallel to one another.
Claim 58
Independent Claim
20 words
The method of claims 36 or 39 wherein said band gap is within the range of 1.4 to 2.2 eV.
Claim 59
Independent Claim
17 words
The method of claims 36 or 39 wherein said band gap is substantially equal to 1.8 eV.
Claim 60
Independent Claim
12 words
The method of claims 36 or 39 wherein said polyphosphide is crystalline.
Claim 61
Independent Claim
12 words
The method of claims 36 or 39 wherein said polyphosphide is amorphous.
Claim 62
Dependent Claim
68 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and containing alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) means attached to said material for electrically communicating within said material.
Claim 63
Dependent Claim
68 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, a polyphosphide containing phosphorus-to-phosphorus bonds and containing alkali metal atoms, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting; and (b) means attached to said material for electrically communicating within said material.
Claim 64
Dependent Claim
52 words
The device of claim 53 wherein the number of consecutive phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to provide said material with a band gap which falls within the range of 1.4 to 2.2 eV and a photoconductivity ratio which falls within the range of 100 to 10,000.
Claim 65
Dependent Claim
15 words
The device of claim 54 wherein said band gap is substantially equal to 1.8 eV.
Claim 66
Independent Claim
17 words
The device of claims 53 or 55 wherein said atoms comprise a single metal from said group.
Claim 67
Independent Claim
19 words
The device of claims 53 or 55 wherein said atoms comprise at least two different metals from said group.
Claim 68
Independent Claim
12 words
The device of claims 53 or 55 wherein said polyphosphide is crystalline.
Claim 69
Independent Claim
12 words
The device of claims 53 or 55 wherein said polyphosphide is amorphous.
Claim 70
Dependent Claim
26 words
The device of claim 58 wherein at least 7 phosphorus atoms are bonded to other phosphorus atoms per each metal atom bonded to a phosphorus atom.
Claim 71
Dependent Claim
24 words
The device of claim 58 wherein 15 phosphorus atoms are bonded to other phosphorus atoms per each metal atom bonded to a phosphorus atom.
Claim 72
Dependent Claim
26 words
The device of claim 59 where more than 15 phosphorus atoms are bonded to other phosphorus atoms per each metal atom bonded to a phosphorus atom.
Claim 73
Dependent Claim
89 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) means attached to said material for electrically communicating with said material.
Claim 74
Dependent Claim
89 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one alkali metal atom, said alkali metal atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds; and (b) means attached to said material for electrically communicating with said material.
Claim 75
Dependent Claim
26 words
The device of claim 63 wherein the skeleton of each unit forms a tubular array of phosphorus and said atoms are positioned between said tubular arrays.
Claim 76
Dependent Claim
19 words
The device of claim 64 wherein the longitudinal axes of said tubular arrays are substantially parallel to one another.
Claim 77
Dependent Claim
62 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal, and x is the atom ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV; and
Claim 78
Dependent Claim
62 words
A semiconductor device comprising: (a) a material which comprises, at least as one component thereof, a polyphosphide having the formula MP x wherein M is an alkali metal, and x is the atom ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV; and
Claim 79
Dependent Claim
12 words
(b) means attached to said material for electrically communicating with said material.
Claim 80
Dependent Claim
12 words
(b) means attached to said material for electrically communicating with said material.
Claim 81
Dependent Claim
16 words
The device of claim 66 wherein said metal M is a single metal from said group.
Claim 82
Dependent Claim
18 words
The device of claim 66 wherein said metal M comprises at least two different metals from said group.
Claim 83
Dependent Claim
36 words
The device of claim 66 wherein said polyphosphide has the formula [M y M' 1-y ] P x , wherein M and M' are alkali metals, and y is a number from 0 to 1 inclusive.
Claim 84
Independent Claim
40 words
The device of claims 66, 67, or 68 wherein said polyphosphide may be defined by the formula [MP 7 ] a [P 8 ] b , wherein b:a is the atom ratio of [P 8 ] to [MP 7 ].
Claim 85
Independent Claim
21 words
The device of claims 66, 67, or 68 wherein said band gap is within the range of 1.4 to 2.2 eV.
Claim 86
Independent Claim
18 words
The device of claims 66, 67, or 68 wherein said band gap is substantially equal to 1.8 eV.
Claim 87
Independent Claim
13 words
The device of claims 66, 67, or 68 wherein said polyphosphide is crystalline.
Claim 88
Independent Claim
13 words
The device of claims 66, 67, or 68 wherein said polyphosphide is amorphous.
Claim 89
Independent Claim
18 words
The device of claims 66, 67, or 68 wherein x is within the range of 7 to 15.
Claim 90
Dependent Claim
15 words
The device of claim 73 wherein x is within the range of 7 to 15.
Claim 91
Independent Claim
12 words
The device of claims 66, 67, or 68 wherein x is 15.
Claim 92
Dependent Claim
9 words
The device of claim 73 wherein x is 15.
Claim 93
Dependent Claim
11 words
The device of claim 74 wherein x is greater than 15.
Claim 94
Dependent Claim
71 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one component thereof a polyphosphide containing phosphorus-to-phosphorus bonds and containing metal atoms selected from the group consisting of Li, Na, K, Rb, and Cs, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting.
Claim 95
Dependent Claim
71 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one component thereof a polyphosphide containing phosphorus-to-phosphorus bonds and containing metal atoms selected from the group consisting of Li, Na, K, Rb, and Cs, which atoms are bonded to said phosphorus, and wherein the number of consecutive covalent phosphorus-to-phosphorus bonds is sufficiently greater than the number of non-phosphorus-to-phosphorus bonds, to render said material semiconducting.
Claim 96
Dependent Claim
89 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one element thereof at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one metal atom from the group consisting of Li, Na, K, Rb, and Cs, said atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds.
Claim 97
Dependent Claim
89 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one element thereof at least two polyphosphide units, each unit having a skeleton of at least 7 covalently bonded phosphorus atoms, said units having associated therewith at least one metal atom from the group consisting of Li, Na, K, Rb, and Cs, said atom conductively bridging the phosphorus skeleton of one unit with the phosphorus skeleton of another unit, and said material having a band gap primarily determined by said phosphorus-to-phosphorus bonds.
Claim 98
Dependent Claim
77 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one component thereof a polyphosphide having the formula MP x wherein M is a metal selected from the group consisting of Li, Na, K, Rb, and Cs, and x is the atomic ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV.
Claim 99
Dependent Claim
77 words
The process of using as the active semiconductor in a semiconductor device, material having as at least one component thereof a polyphosphide having the formula MP x wherein M is a metal selected from the group consisting of Li, Na, K, Rb, and Cs, and x is the atomic ratio of P to M, x being at least 7, and wherein said material has an energy band gap within the range of from 1 to 3 eV.
Claim 100
Dependent Claim
35 words
The invention defined in claims 1, 13, 18, 34, 35, 36, 37, 38, 39, 53, 63, 66, 80, 81, 82 wherein said material has a photoconductivity ratio within the range of from 100 to 10,000.
Claim 101
Dependent Claim
22 words
The invention defined in claim 83 wherein said material has a band gap within the range of from 1 to 3 eV.
Claim 102
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout trivalent atoms the vast majority of said atoms having homatomic, covalent, bonds and having a bandgap within the range of 1.4 to 2.2 eV.
Claim 103
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout trivalent atoms the vast majority of said atoms having homatomic, covalent, bonds and having a bandgap within the range of 1.4 to 2.2 eV.
Claim 104
Dependent Claim
19 words
A semiconductor device as defined in claim 85 having a photoconductivity ratio within the range of 100 to 10,000.
Claim 105
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout trivalent atoms the vast majority of said atoms having homatomic, covalent, bonds and having a photoconductivity ratio within the range of 100 to 10,000.
Claim 106
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout trivalent atoms the vast majority of said atoms having homatomic, covalent, bonds and having a photoconductivity ratio within the range of 100 to 10,000.
Claim 107
Dependent Claim
22 words
A semiconductor device as defined in claims 85, 86, or 87 wherein at least 6/7ths of said atoms have 3 homatomic bonds.
Claim 108
Dependent Claim
15 words
A semiconductor device as defined in claim 88 wherein said covalently bonded atoms are phosphorus.
Claim 109
Dependent Claim
22 words
A semiconductor device as defined in claim 85, 86, or 87 wherein at least 14/15ths of said atoms have 3 homatomic bonds.
Claim 110
Dependent Claim
15 words
A semiconductor device as defined in claim 90 wherein said covalently bonded atoms are phosphorus.
Claim 111
Dependent Claim
26 words
A semiconductor device as defined in claims 85, 86, or 87 wherein the proportion of said atoms having homatomic bonds is very much greater than 14/15ths.
Claim 112
Dependent Claim
15 words
A semiconductor device as defined in claim 92 wherein said covalently bonded atoms are phosphorus.
Claim 113
Dependent Claim
40 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by groups of seven or more atoms covalently bonded together into substantially pentagonal tubes and having a bandgap substantially within the range of 1.4 to 2.2 eV.
Claim 114
Dependent Claim
40 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by groups of seven or more atoms covalently bonded together into substantially pentagonal tubes and having a bandgap substantially within the range of 1.4 to 2.2 eV.
Claim 115
Dependent Claim
40 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by groups of seven or more atoms covalently bonded together into substantially pentagonal tubes and having a photoconductivity ratio substantially within the range of 100 to 10,000.
Claim 116
Dependent Claim
40 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by groups of seven or more atoms covalently bonded together into substantially pentagonal tubes and having a photoconductivity ratio substantially within the range of 100 to 10,000.
Claim 117
Dependent Claim
22 words
A semiconductor device as defined in any of claims 85, 86, 87, 94, or 95 wherein said covalently bonded atoms are phosphorus.
Claim 118
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by polyphosphide groups having the formula MP x where M is an alkoli metal and x is greater than six.
Claim 119
Dependent Claim
33 words
A semiconductor device formed of material substantially comprising throughout, a local order defined by polyphosphide groups having the formula MP x where M is an alkoli metal and x is greater than six.
Claim 120
Dependent Claim
14 words
A semiconductor device as defined in claim 97 wherein x is greater than 14.
Claim 121
Dependent Claim
37 words
A semiconductor device comprising material substantially comprising throughout, a local order defined by atoms joined together by multiple covalent atom-to-atom bonds forming layers of pentagonal tubes, the tubes within each layer being substantially parallel to each other.
Claim 122
Dependent Claim
37 words
A semiconductor device comprising material substantially comprising throughout, a local order defined by atoms joined together by multiple covalent atom-to-atom bonds forming layers of pentagonal tubes, the tubes within each layer being substantially parallel to each other.
Claim 123
Dependent Claim
16 words
A semiconductor device as defined in claim 99 wherein said covalently bonded atoms are predominantly phosphorus.
Claim 124
Dependent Claim
29 words
A semiconductor device as defined in claims 97, 98, 99, or 100 wherein the band gap of said material is within the range of 1 to 3 electron volts.
Claim 125
Dependent Claim
19 words
A semiconductor device as defined in claim 101 wherein the band gap is substantially equal to 1.8 electron volts.
Claim 126
Dependent Claim
23 words
A semiconductor device as defined in claim 101 whereifn the photoconductivity ratio of said material is within the range of 100 to 10,000.
Claim 127
Dependent Claim
23 words
A semiconductor device as defined in claim 102 wherein the photoconductivity ratio of said material is within the range of 100 to 10,000.
Claim 128
Dependent Claim
16 words
A semiconductor device as defined in claims 94 or 95 wherein the tubes are generally parallel.
Claim 129
Dependent Claim
16 words
A semiconductor device as defined in claims 94 or 95 wherein said groups are generally parallel.
Claim 130
Dependent Claim
27 words
A semiconductor device as defined in any one of claims 85, 86, 87, 94, 95, or 97 to 100 formed of a single crystal of said material.
Claim 131
Dependent Claim
24 words
A semiconductor device as defined in any one of claims 85, 86, 87, 94, 95, or 97 to 100 wherein said material is polycrystalline.
Claim 132
Dependent Claim
15 words
A semiconductor device as defined in claim 108 wherein said material is a thin film.
Claim 133
Dependent Claim
24 words
A semiconductor device as defined in any one of claims 85, 86, 87, 94, 95, or 97 to 100 wherein said material is amorphous.
Claim 134
Dependent Claim
15 words
A semiconductor device as defined in claim 110 wherein said material is a thin film.
Claim 135
Dependent Claim
44 words
A semiconductor device as defined in any one of claims 85 86, 87, 94, 95, or 97 to 100 wherein said material is formed as the deposition product from vapor transport in a deposition zone from separated sources of phosphorus and an alkali metal.
Claim 136
Dependent Claim
33 words
A semiconductor device as defined in any one of claims 85, 86, 87, 94, 95, or 97 to 100 wherein said material is doped by substituting for phosphorus atoms, atoms of another pnictide.
Claim 137
Dependent Claim
13 words
A semiconductor device as defined in claim 113 wherein said pnictide is As.
Claim 138
Dependent Claim
37 words
A semiconductor device as defined in any one of claims 85, 86, 87, 94, 95, or 97 to 100 wherein said material is doped by diffusing therein a metal having occupied outer f or d electronic levels.
Claim 139
Dependent Claim
22 words
A semiconductor device as defined in claim 115 wherein said dopant is chosen from the group consisting of nickel, iron, and chromium.
Claim 140
Dependent Claim
14 words
A semiconductor device as defined in claim 116 further defined as comprising a junction.
Claim 141
Dependent Claim
28 words
A semiconductor device as defined in claim 117 wherein said junction comprises a metal selected from the group consisting of Cu, Al, Mg, Ni, Au, Ag, and Ti.
Claim 142
Dependent Claim
14 words
A semiconductor device as defined in claim 118 wherein said dopant metal is Ni.
Claim 143
Dependent Claim
66 words
A semiconductor device comprising an inorganic material having as its dominant local order substantially throughout its extent catenations of homatomic covalently bonded atoms, substantially all of the covalent bonds of said material being involved in the catenation of said atoms and said covalent bonds providing the dominant conduction paths in said material, said material having a bandgap substantially within the range of 1.4 to 2.2 eV.
Claim 144
Dependent Claim
66 words
A semiconductor device comprising an inorganic material having as its dominant local order substantially throughout its extent catenations of homatomic covalently bonded atoms, substantially all of the covalent bonds of said material being involved in the catenation of said atoms and said covalent bonds providing the dominant conduction paths in said material, said material having a bandgap substantially within the range of 1.4 to 2.2 eV.
Claim 145
Dependent Claim
66 words
A semiconductor device comprising an inorganic material having as its dominant local order substantially throughout its extent catenations of homatomic covalently bonded atoms, substantially all of the covalent bonds of said material being involved in the catenation of said atoms and said covalent bonds providing the dominant conduction paths in said material, said material having a photoconductivity ratio substantially within the range of 100 to 10,000.
Claim 146
Dependent Claim
66 words
A semiconductor device comprising an inorganic material having as its dominant local order substantially throughout its extent catenations of homatomic covalently bonded atoms, substantially all of the covalent bonds of said material being involved in the catenation of said atoms and said covalent bonds providing the dominant conduction paths in said material, said material having a photoconductivity ratio substantially within the range of 100 to 10,000.
Claim 147
Dependent Claim
21 words
A semiconductor device as defined in claims 120 or 121 wherein said covalently bonded atoms form a three dimensional columnar structure.
Claim 148
Dependent Claim
13 words
A semiconductor device as defined in claim 122 wherein said atoms are trivalent.
Claim 149
Dependent Claim
24 words
A semiconductor device as defined in claim 123 wherein the covalent bonds of said atoms are spaced at an average angle greater than 98°.
Claim 150
Dependent Claim
16 words
A semiconductor device as defined in claim 124 wherein said angle ranges from 87° to 109°.
Claim 151
Dependent Claim
16 words
A semiconductor device as defined in claim 123 wherein said atoms are one or more pnictides.
Claim 152
Dependent Claim
14 words
A semiconductor device as defined in claim 124 wherein said atoms are predominantly phosphorus.
Claim 153
Dependent Claim
32 words
A semiconductor device as defined in claims 120 or 121, and additional atoms of one or more different elements than atoms of said catenations bonded between two or more of said catenations.
Claim 154
Dependent Claim
23 words
A semiconductor device as defined in claim 128 wherein said additional atoms form conduction paths between the catenations to which they are bonded.
Claim 155
Dependent Claim
19 words
A semiconductor device as defined in claim 128 wherein said catenations in each local order are all generally parallel.
Claim 156
Dependent Claim
18 words
A semiconductor device as defined in claim 122 wherein said columnar structure is channel-like when viewed on end.
Claim 157
Dependent Claim
19 words
A semiconductor device as defined in claim 131 wherein said catenations in each local order are all generally parallel.
Claim 158
Dependent Claim
18 words
A semiconductor device as defined in claim 131 wherein said columnar structure is pentagonal when viewed on end.
Claim 159
Dependent Claim
19 words
A semiconductor device as defined in claim 133 wherein said catenations in each local order are all generally parallel.
Claim 160
Dependent Claim
18 words
A semiconductor device as defined in claim 132 wherein said columnar structure is pentagonal when viewed on end.
Claim 161
Dependent Claim
34 words
A semiconductor device comprising MP x , wherein M is an alkali metal, P is at least one pnictide, x is the atom ratio of P to M, and x is greater than 14.
Claim 162
Dependent Claim
34 words
A semiconductor device comprising MP x , wherein M is an alkali metal, P is at least one pnictide, x is the atom ratio of P to M, and x is greater than 14.
Claim 163
Dependent Claim
38 words
The process of using in a semiconductor device MP x , wherein M is an alkali metal, P is at least one pnictide, x is the atom ratio of P to M, and x is greater than 14.
Claim 164
Dependent Claim
38 words
The process of using in a semiconductor device MP x , wherein M is an alkali metal, P is at least one pnictide, x is the atom ratio of P to M, and x is greater than 14.
Claim 165
Dependent Claim
32 words
A semiconductor device comprising a high phosphorus material formed as the deposition product of vapor transport from separated heated sources of phosphorus vapor and the vapor of one or more alkali metals.
Claim 166
Dependent Claim
32 words
A semiconductor device comprising a high phosphorus material formed as the deposition product of vapor transport from separated heated sources of phosphorus vapor and the vapor of one or more alkali metals.
Claim 167
Dependent Claim
57 words
A semiconductor device comprising a new form of solid phosphorus wherein the phosphorus atoms are joined together by multiple covalent phosphorus to phosphorus bonds forming substantially pentagonal tubular arrays of bonded phosphorus atoms the local order substantially throughout said phosphorus being defined by said tubular arrays having predominantly all of their axes generally parallel to each other.
Claim 168
Dependent Claim
57 words
A semiconductor device comprising a new form of solid phosphorus wherein the phosphorus atoms are joined together by multiple covalent phosphorus to phosphorus bonds forming substantially pentagonal tubular arrays of bonded phosphorus atoms the local order substantially throughout said phosphorus being defined by said tubular arrays having predominantly all of their axes generally parallel to each other.
Claim 169
Dependent Claim
29 words
A semiconductor device comprising a solid film of MP x deposited on a substrate where M is one or more alkali metals and P is one or more pnictides.
Claim 170
Dependent Claim
29 words
A semiconductor device comprising a solid film of MP x deposited on a substrate where M is one or more alkali metals and P is one or more pnictides.
Claim 171
Dependent Claim
40 words
A semiconductor device comprising a solid stable material having the formula MP x where M is one or more alkali metals and P is primarily phosphorus but may include one or more other pnictides and x is greater than 15.
Claim 172
Dependent Claim
40 words
A semiconductor device comprising a solid stable material having the formula MP x where M is one or more alkali metals and P is primarily phosphorus but may include one or more other pnictides and x is greater than 15.
Claim 173
Dependent Claim
20 words
That which is claimed in any one of claims 53, 63, 66, 136 or 137 wherein said metal is Li.
Claim 174
Dependent Claim
20 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said metal is Na.
Claim 175
Dependent Claim
20 words
That which is claimed in any one of claims 53, 63, 66, 136 or 137 wherein said metal is K.
Claim 176
Dependent Claim
20 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said metal is Rb.
Claim 177
Dependent Claim
20 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said metal is Cs.
Claim 178
Dependent Claim
27 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said material is LiP x and x is at least 7.
Claim 179
Dependent Claim
27 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said material is NaP x and x is at least 7.
Claim 180
Dependent Claim
27 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said material is KP x and x is at least 7.
Claim 181
Dependent Claim
27 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said material is RbP x and x is at least 7.
Claim 182
Dependent Claim
27 words
That which is claimed in any one of claims 53, 63, 66, 136, or 137 wherein said material is CsP x and x is at least 7.
Claim 183
Dependent Claim
12 words
That which is claimed in claim 137 wherein x is about 15.
Claim 184
Dependent Claim
12 words
That which is claimed in claim 148 wherein x is about 15.
Claim 185
Dependent Claim
12 words
That which is claimed in claim 149 wherein x is about 15.
Claim 186
Dependent Claim
12 words
That which is claimed in claim 150 wherein x is about 15.
Claim 187
Dependent Claim
12 words
That which is claimed in claim 151 wherein x is about 15.
Claim 188
Dependent Claim
20 words
The semiconductor device defined in any one of claims 138, 139, 140 or 141 further defined as comprising a diode.
Claim 189
Dependent Claim
31 words
The semiconductor device defined in claim 157 wherein said diode comprises a metal contact and said contact is selected from the group comprising Cu, Al, Mg, Ni, Au, As, and Ti.
Claim 190
Dependent Claim
25 words
The semiconductor device defined in claim 157 wherein said material is doped with a metal chosen from the group consisting of Ni, Fe, and Cr.
Claim 191
Dependent Claim
28 words
The semiconductor device defined in claim 157 wherein said diode comprises a metal contact and said contact is a metal having occupied d or f outer electronic levels.
Claim 192
Dependent Claim
40 words
The invention defined in any one of claims 1, 13, 18, 34, 35, 36, 37, 38, 39, 53, 63, 66, 80, 81, 82, 97, 136 or 137 wherein the atom ratio of phosphorus to metal is substantially 50 or greater.
Claim 193
Dependent Claim
15 words
The invention defined in claim 161 wherein said atom ratio is substantially 200 or greater.
Claim 194
Dependent Claim
15 words
The invention defined in claim 162 wherein said atom ratio is substantially 1,000 or greater.
Claim 195
Dependent Claim
19 words
The invention defined in claim 163 wherein the amount of said metal is less than 1,000 parts per million.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-01 | 1988-10-01 | 1989-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-01 | 1992-10-01 | 1993-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-01 | 1996-10-01 | 1997-04-02 | $7700.00 | Window Closed / Lapsed |