US4507519A
Expired / Lapsed
US
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Photoelectronic conversion device
Assignee: Fuji Electric Co Ltd
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Filing: 1983-02-01
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Granted: 1985-03-26
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Expires: 2003-02-01
Abstract
Abstract In the typical embodiment of the invention described herein, a photoelectronic conversion device comprises a transparent insulative substrate, a first transparent electrode layer of Sn-incorporated In 2 O 3 having a relatively low sheet resistance and a thickness of about 1000 Å, a second transparent electrode layer of SnO 2 having a relatively high plasma resistance and a thickness of several tens to several hundreds of Angstroms, an amorphous semiconductor film formed by a plasma CVD process at a substrate temperature of about 200°-250° C., and a metal electrode.
Inventors
- 👤 Maruyama Kazumi
- 👤 Uchida Yoshiyuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:56
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F19/00; H10F19/30; H10F19/31; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
90 words
A photoelectronic conversion device comprising: a transparent insulative substrate; a first transparent electrode layer over said substrate, said first electrode layer having a relatively low sheet resistance; a second transparent electrode layer on said first transparent electrode layer, said second electrode layer having a relatively high plasma resistance; and an amorphous semiconductor film on said second transparent electrode layer, wherein the second transparent electrode layer is also provided between the first transparent electrode layer and the substrate, in addition to between the first transparent electrode layer and the amorphous film.
Claim 2
Dependent Claim
90 words
A photoelectronic conversion device comprising: a transparent insulative substrate; a first transparent electrode layer over said substrate, said first electrode layer having a relatively low sheet resistance; a second transparent electrode layer on said first transparent electrode layer, said second electrode layer having a relatively high plasma resistance; and an amorphous semiconductor film on said second transparent electrode layer, wherein the second transparent electrode layer is also provided between the first transparent electrode layer and the substrate, in addition to between the first transparent electrode layer and the amorphous film.
Claim 3
Dependent Claim
26 words
The photoelectronic conversion device according to claim 1 wherein said first transparent electrode comprises Sn-incorporated In 2 O 3 having a thickness of about 1000 Å.
Claim 4
Dependent Claim
27 words
The photoelectronic conversion device according to claim 1 wherein said second transparent electrode comprises SnO 2 having a thickness of several tens to several hundreds of Angstroms.
Claim 5
Dependent Claim
52 words
The photoelectronic conversion device according to claim 2 wherein said amorphous semiconductor film comprises a p-type layer having a thickness of about 100 Å, a non-doped layer having a thickness of about 500 Å, and an n-type layer having a thickness of about 500 Å, all formed by a plasma CVD process.
Claim 6
Dependent Claim
18 words
The photoelectronic conversion device according to claim 2 further including a metal electrode on said amorphous semiconductor film.
Claim 7
Dependent Claim
14 words
The photoelectronic conversion device according to claim 5 wherein said metal electrode comprises aluminum.
Claim 8
Dependent Claim
23 words
The photoelectronic conversion device according to claim 6 wherein said amorphous silicon layer is grown at a substrate temperature of about 200°-250° C.
Claim 9
Dependent Claim
20 words
The photoelectronic conversion device according to claim 2 wherein the first transparent electrode layer comprises a plurality of separate segments.
Claim 10
Dependent Claim
88 words
A photoelectronic conversion device comprising: a transparent insulative substrate; a first transparent electrode layer on said substrate, said first electrode layer having a relatively low sheet resistance; a second transparent electrode layer on said first transparent electrode layer, said second electrode layer having a relatively high plasma resistance; and an amorphous semiconductor film on said second transparent electrode layer, wherein the first transparent electrode layer comprises a plurality of separate segments and the second transparent electrode layer comprises a substantially continuous sheet over said separate first electrode segments.
Claim 11
Dependent Claim
88 words
A photoelectronic conversion device comprising: a transparent insulative substrate; a first transparent electrode layer on said substrate, said first electrode layer having a relatively low sheet resistance; a second transparent electrode layer on said first transparent electrode layer, said second electrode layer having a relatively high plasma resistance; and an amorphous semiconductor film on said second transparent electrode layer, wherein the first transparent electrode layer comprises a plurality of separate segments and the second transparent electrode layer comprises a substantially continuous sheet over said separate first electrode segments.
Claim 12
Dependent Claim
26 words
The photoelectronic conversion device according to claim 9 wherein said first transparent electrode comprises Sn-incorporated In 2 O 3 having a thickness of about 1000 Å.
Claim 13
Dependent Claim
27 words
The photoelectronic conversion device according to claim 9 wherein said second transparent electrode comprises SnO 2 having a thickness of several tens to several hundreds of Angstroms.
Claim 14
Dependent Claim
52 words
The photoelectronic conversion device according to claim 9 wherein said amorphous semiconductor film comprises a p-type layer having a thickness of about 100 Å, a non-doped layer having a thickness of about 500 Å, and an n-type layer having a thickness of about 500 Å, all formed by a plasma CVD process.
Claim 15
Dependent Claim
18 words
The photoelectronic conversion device according to claim 9 further including a metal electrode on said amorphous semiconductor film.
Claim 16
Dependent Claim
14 words
The photoelectronic conversion device according to claim 13 wherein said metal electrode comprises aluminum.
Claim 17
Dependent Claim
23 words
The photoelectronic conversion device according to claim 13 wherein said amorphous silicon layer is grown at a substrate temperature of about 200°-250° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-25 | 1988-09-24 | 1989-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-25 | 1992-09-24 | 1993-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-25 | 1996-09-24 | 1997-03-26 | $7700.00 | Window Closed / Lapsed |