EP0070509A2
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EP
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Amorphous semiconductor and amorphous silicon photovoltaic device
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1982-07-14
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Granted: —
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Expires: 2002-07-14
Abstract
Abstract An amorphous silicon semiconductor of the general formula: a-Si (1-x-y) C x N y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when It is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO 2 two layer structure as a transparent electrode for the photovoltaic device with the SnO 2 layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.
Inventors
- 👤 Hamakawa Yoshihiro
- 👤 Tawada Yoshihisa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 00:04
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S420/00; Y10S420/903
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
14 words
An amorphous semiconductor having the general formula: a-Si (1-x-y) C x N y .
Claim 2
Dependent Claim
14 words
An amorphous semiconductor having the general formula: a-Si (1-x-y) C x N y .
Claim 3
Dependent Claim
15 words
The amorphous semiconductor of Claim 1, which is doped with a P-type or N-type impurity.
Claim 4
Dependent Claim
23 words
The amorphous semiconductor of Claim 2, wherein the doped amorphous semiconductor has an electric conductivity of not less than 10 8(Ω.cm) -1 .
Claim 5
Dependent Claim
42 words
In an amorphour silicon derivative PIN junction photovoltaic device, the photovoltaic device is improved in that at least one of the P-type and N-type amorphous silicon semiconductors is an amorphous semiconductor having the general formula: a-Si (1-x-y) C x N y .
Claim 6
Dependent Claim
42 words
In an amorphour silicon derivative PIN junction photovoltaic device, the photovoltaic device is improved in that at least one of the P-type and N-type amorphous silicon semiconductors is an amorphous semiconductor having the general formula: a-Si (1-x-y) C x N y .
Claim 7
Dependent Claim
41 words
The photovoltaic device of Claim 4, wherein the values, x and y, in the general formula satisfy the following equations : 0.05 ≤ x ≤ 0. 75; 0.05 ≤ y ≦ 0. 75; and 0.05 ≦ x + y ≦ 0.80.
Claim 8
Dependent Claim
69 words
In an amorphous silicon derivative PIN junction photovoltaic device, the photovoltaic device is improved in that a transparent electrode consisting of ITO and SnO 2 layers is provided on the P or N layer located on the light impinging side so that the SnO 2 layer comes into contact with said P or N layer, said SnO 2 layer having a thickness of about 30 to about 500 angstroms.
Claim 9
Dependent Claim
69 words
In an amorphous silicon derivative PIN junction photovoltaic device, the photovoltaic device is improved in that a transparent electrode consisting of ITO and SnO 2 layers is provided on the P or N layer located on the light impinging side so that the SnO 2 layer comes into contact with said P or N layer, said SnO 2 layer having a thickness of about 30 to about 500 angstroms.
Claim 10
Dependent Claim
21 words
The photovoltaic device of Claim 6, wherein said SnO 2 layer has a thickness of about 50 to about 500 angstroms.
Claim 11
Dependent Claim
73 words
The photovoltaic device of Claim 6, wherein the amorphous semiconductor of said P or N layer which comes into contact with the SnO 2 layer is a member selected from the group consisting of an amorphous semiconductor of the general formula: a-Si (1-x) C x , an amorphous semiconductor of the general formula: a-Si (1-y) N y , and an amorphous semiconductor of the general formula: a-Si (1-x-y) C x N y .
Claim 12
Dependent Claim
40 words
The photovoltaic device of Claim 6, wherein the amorphous semiconductor of said P or N layer which comes into contact with the SnO 2 layer is an amorphous semiconductor of the general formula: a-Si (1-x-y) C x N y .
References Cited (Backward Citations)
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