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US4504331A
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Silicon dopant source in intermetallic semiconductor growth operations
Assignee: International Business Machines Corp
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Filing: 1983-12-08
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Granted: 1985-03-12
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Expires: 2003-12-08
Abstract
Abstract In intermetallic semiconductor crystal growth such as the growth of GaAs and GaAlAs, silicon as a dopant can be introduced more efficiently and evenly when provided as a gaseous hydride based compound involving a molecule where there are joined silicon atoms such as Si 2 H 6 to Si 5 H 12 .
Inventors
- 👤 Thomas F. Kuech
- 👤 Bernard S. Meyerson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
56 words
In the metal organic chemical vapor deposition growth of an intermetallic semiconductor crystal wherein silicon is introduced as a dopant during said growth the improvement comprising providing said silicon dopant from a source of a hydride based compound of silicon involving a molecule where there are joined silicon atoms in gaseous form over said growing crystal.
Claim 2
Dependent Claim
56 words
In the metal organic chemical vapor deposition growth of an intermetallic semiconductor crystal wherein silicon is introduced as a dopant during said growth the improvement comprising providing said silicon dopant from a source of a hydride based compound of silicon involving a molecule where there are joined silicon atoms in gaseous form over said growing crystal.
Claim 3
Dependent Claim
16 words
The improvement of claim 1 wherein said hydride based silicon compound is a higher silane gas.
Claim 4
Dependent Claim
17 words
The improvement of claim 2 wherein said higher silane gas is disilane Si 2 H 6 .
Claim 5
Dependent Claim
26 words
The improvement of claim 2 wherein said hydride based silicon compound is a higher silane between Si 2 H 6 and Si 5 H 12 .
Claim 6
Dependent Claim
13 words
The improvement of claim 1 wherein said intermetallic semiconductor is gallium arsenide (GaAs).
Claim 7
Dependent Claim
14 words
The improvement of claim 1 wherein said intermetallic semiconductor is gallium aluminum arsenide (GaAlAs).
Claim 8
Dependent Claim
24 words
The improvement of claim 3 wherein said intermetallic semiconductor is a member of the group of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs).
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-11 | 1988-09-10 | 1989-03-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-11 | 1992-09-10 | 1993-03-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-11 | 1996-09-10 | 1997-03-12 | $7700.00 | Window Closed / Lapsed |