US4500365A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser treating implanted semiconductor surface through photo-resist layer
Assignee: Fujitsu Ltd
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Filing: 1983-02-16
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Granted: 1985-02-19
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Expires: 2003-02-16
Abstract
Abstract A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength λ. The method includes the steps of opening a window through an insulating layer formed on the surface of the semiconductor substrate, coating on the entire surface of the substrate a light transmitting film having an index n of refraction in such a manner that the thickness of the film over the exposed window part is equal, or substantially equal, to the value of λ/4n or λ/4n times an odd number, and then carrying out the irradiation of the laser beam. A photo-resist, thermally grown silicon dioxide film, silicon dioxide film by chemical vapor deposition, CVD phosphosilicate glass, or a glass film formed by coating hydroxide of silicon or its high molecule polymer is employed as the light transmitting film.
Inventors
- 👤 Haruhisa Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:35
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
135 words
A method of manufacturing a semiconductor device wherein an ion implanted surface region of a semiconductor substrate is heated by irradiating with a laser beam of wavelength λ, said method comprising the steps of: (a) selectively placing an impurity into said semiconductor substrate by ion implantation using an insulating layer as a mask; (b) forming a light transmitting film, comprising a photoresist and having a refraction index n, on said ion implanted surface region of the semiconductor substrate and on the insulating layer formed on the non-implanted surface of the semiconductor substrate, said light transmitting film having a uniform thickness defined by mλ/4n, where m is an odd natural number; and (c) irradiating said laser beam through said light transmitting film for selectively heating and activating said ion implanted surface region of the semiconductor substrate.
Claim 2
Independent Claim
135 words
A method of manufacturing a semiconductor device wherein an ion implanted surface region of a semiconductor substrate is heated by irradiating with a laser beam of wavelength λ, said method comprising the steps of: (a) selectively placing an impurity into said semiconductor substrate by ion implantation using an insulating layer as a mask; (b) forming a light transmitting film, comprising a photoresist and having a refraction index n, on said ion implanted surface region of the semiconductor substrate and on the insulating layer formed on the non-implanted surface of the semiconductor substrate, said light transmitting film having a uniform thickness defined by mλ/4n, where m is an odd natural number; and (c) irradiating said laser beam through said light transmitting film for selectively heating and activating said ion implanted surface region of the semiconductor substrate.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein the step of ion implanting ions into the semiconductor substrate through said film is subsequent to forming said light transmitting film.
Claim 4
Dependent Claim
147 words
In a method of manufacturing a semiconductor device having the steps of opening a window through an insulating layer formed on the surface of a semiconductor substrate, and then irradiating a laser beam of a wavelength λ onto the part of the semiconductor substrate thus exposed to heat selectively the irradiated part, the method further comprising the steps of: extensively covering the exposed surface of said semiconductor substrate and said insulating layer formed on the non-implanted surface of the semiconductor substrate with a light transmitting film comprising a photoresist and having an index of refraction n, said film being applied such that its thickness is uniform and equal, or substantially equal, to the value of λ/4n or λ4/n times an odd number, and thereafter carrying out irradiation of said laser beam through said light transmitting film for selectively heating the exposed window surface of the semiconductor substrate.
Claim 5
Dependent Claim
147 words
In a method of manufacturing a semiconductor device having the steps of opening a window through an insulating layer formed on the surface of a semiconductor substrate, and then irradiating a laser beam of a wavelength λ onto the part of the semiconductor substrate thus exposed to heat selectively the irradiated part, the method further comprising the steps of: extensively covering the exposed surface of said semiconductor substrate and said insulating layer formed on the non-implanted surface of the semiconductor substrate with a light transmitting film comprising a photoresist and having an index of refraction n, said film being applied such that its thickness is uniform and equal, or substantially equal, to the value of λ/4n or λ4/n times an odd number, and thereafter carrying out irradiation of said laser beam through said light transmitting film for selectively heating the exposed window surface of the semiconductor substrate.
Claim 6
Independent Claim
175 words
A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength λ, the method comprising the steps of: (a) forming a insulating layer on the surface of the semiconductor substrate; (b) opening a window through the insulating layer formed on the semiconductor substrate; (c) selectively inplanting ions into the exposed window region of the semiconductor substrate using the insulating layer as a mask; (d) forming a light transmitting film, comprising a photoresist over the exposed surface of the semiconductor substrate and over the insulating layer formed on the non-ion implanted surface region of the semiconductor substrate, said light transmitting film having a index n of refraction and formed such that its thickness is uniform and equal, or substantially equal, to the value λ/4n or an odd multiple thereof; and (e) irradiating the surface of the semiconductor substrate with the laser beam of the wavelength λ through the light transmitting film for selectively heating and activating said ion implanted region.
Claim 7
Independent Claim
175 words
A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength λ, the method comprising the steps of: (a) forming a insulating layer on the surface of the semiconductor substrate; (b) opening a window through the insulating layer formed on the semiconductor substrate; (c) selectively inplanting ions into the exposed window region of the semiconductor substrate using the insulating layer as a mask; (d) forming a light transmitting film, comprising a photoresist over the exposed surface of the semiconductor substrate and over the insulating layer formed on the non-ion implanted surface region of the semiconductor substrate, said light transmitting film having a index n of refraction and formed such that its thickness is uniform and equal, or substantially equal, to the value λ/4n or an odd multiple thereof; and (e) irradiating the surface of the semiconductor substrate with the laser beam of the wavelength λ through the light transmitting film for selectively heating and activating said ion implanted region.
Claim 8
Dependent Claim
14 words
The method of claim 4, wherein said light transmitting film is a negative photoresist.
Claim 9
Dependent Claim
15 words
The method of claim 5, wherein said insulating layer is a silicon dioxide insulating film.
Claim 10
Dependent Claim
24 words
The method of claim 6, wherein the step of forming the window through the insulating layer comprises selectively etching the silicon dioxide insulating film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-19 | 1988-08-20 | 1989-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-19 | 1992-08-20 | 1993-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-19 | 1996-08-20 | 1997-02-19 | $7700.00 | Window Closed / Lapsed |