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US4494135A
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US
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Programmable read only memory cell having an electrically destructible programmation element integrally formed with a junction diode
Assignee: US Philips Corp
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Filing: 1982-09-28
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Granted: 1985-01-15
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Expires: 2002-09-28
Abstract
Abstract A programmable read-only memory includes a number of programmable memory cells, each of which is formed in a thin layer of semiconductor material which extends on an insulating layer of a semiconductor body. Each programmable memory cell includes a p-n junction diode and an electrically destructible programmation element which are integrally formed in the thin layer of semiconductor material. The programmation element includes a necked-down portion of the thin layer, and this element may also have a p-n junction. The resulting structure yields a memory cell which is simple, highly compact, and which can be easily and reliably manufactured by known methods.
Inventors
- 👤 Michel Moussie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:15
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H; H10; H10B; H10B20/00; H10B20/20; H10D; H10D62/00; H10D62/40; H10D88/00; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
166 words
A semiconductor device comprising a programmable read-only memory having a plurality of programmable memory cells, which comprises: a semiconductor body; a thermally and electrically insulating layer on said body; a thin layer of polycrystalline semiconductor material extending on said insulating layer and having regions of opposite type conductivity and a necked-down region; at least one first p-n junction diode formed between said regions of opposite type conductivity in said thin layer of polycrystalline semiconductor material; and an electrically destructible programmation element integrally formed with each said first p-n junction diode in said thin layer of polycrystalline semiconductor material to form a programmable memory cell, said programmation element comprising a second shortable p-n junction diode formed in said necked-down region of said thin layer and having two semiconductor regions of opposite conductivity type which form the junction, said second diode being connected back-to-back and in series with said first diode, the connected-together regions of said first and second diodes comprising a common region of said thin layer.
Claim 2
Dependent Claim
166 words
A semiconductor device comprising a programmable read-only memory having a plurality of programmable memory cells, which comprises: a semiconductor body; a thermally and electrically insulating layer on said body; a thin layer of polycrystalline semiconductor material extending on said insulating layer and having regions of opposite type conductivity and a necked-down region; at least one first p-n junction diode formed between said regions of opposite type conductivity in said thin layer of polycrystalline semiconductor material; and an electrically destructible programmation element integrally formed with each said first p-n junction diode in said thin layer of polycrystalline semiconductor material to form a programmable memory cell, said programmation element comprising a second shortable p-n junction diode formed in said necked-down region of said thin layer and having two semiconductor regions of opposite conductivity type which form the junction, said second diode being connected back-to-back and in series with said first diode, the connected-together regions of said first and second diodes comprising a common region of said thin layer.
Claim 3
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, further comprising additional circuit elements operatively connected to said memory cells and integrated in said semiconductor body.
Claim 4
Dependent Claim
40 words
A semiconductor device as claimed in claim 2, wherein said semiconductor body is a monocrystalline body and said additional circuit elements are located at least partly below that portion of said thin layer in which the memory cells are formed.
Claim 5
Dependent Claim
32 words
A semiconductor device as claimed in claim 1, wherein said semiconductor body comprises monocrystalline silicon, said insulating layer comprises silicon oxide, and said thin layer on said insulating layer comprises polycrystalline silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-15 | 1988-07-16 | 1989-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-15 | 1992-07-16 | 1993-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-15 | 1996-07-16 | 1997-01-15 | $7700.00 | Window Closed / Lapsed |