Patent US4493977A successfully refreshed from Google Patents.
US4493977A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for heating semiconductor wafers by a light-radiant heating furnace
Assignee: Ushio Denki KK
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Filing: 1983-03-29
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Granted: 1985-01-15
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Expires: 2003-03-29
Abstract
Abstract Disclosed herein is a method for operating a light-radiant heating furnace which includes a main heater capable of irradiating light onto an object to heat it up and a subsidiary heater adapted principally to additionally heat a peripheral portion of said object, which method includes actuating said main heater and subsidiary heater repeated in accordance with their respective actuation curves, which have in advance been prepared, in synchronization with intermittent transportation of objects into said light-radiant heating furnace. The light-radiant heating furnace permits a uniform heat treatment of objects always with high efficiency but without development of slip line or warping, even when they are semiconductor wafers and are heated up in short time periods.
Inventors
- 👤 Tetsuji Arai
- 👤 Yoshiki Mimura
- 👤 Hiroshi Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:14
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B31/00; C30B31/06; C30B31/12; H05; H05B; H05B3/00; H05B3/0033; H05B3/0038; H05B3/0047
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
139 words
A method for heating semiconductor wafers by a light-radiant heating furnace wherein the light-radiant heating furnace includes a main heater and a subsidiary heater, said main heater comprising tubular lamps arranged substantially in a plane so as to form a plane light source unit which is capable of irradiating light onto a semiconductor wafer transported and placed in the light-radiant heating furance to heat mainly a central major part thereof, and said subsidiary heater having a ring shape which extends along a peripheral portion of the semiconductor wafer to heat principally the peripheral portion, the method comprising determining actuation curves for said main heater and said subsidiary heater, and actuating said main heater and said subsidiary heater repeatedly in accordance with their respective actuation curves in synchronization with intermittent transportation of the semiconductor wafers into said light-radiant heating furnace.
Claim 2
Independent Claim
139 words
A method for heating semiconductor wafers by a light-radiant heating furnace wherein the light-radiant heating furnace includes a main heater and a subsidiary heater, said main heater comprising tubular lamps arranged substantially in a plane so as to form a plane light source unit which is capable of irradiating light onto a semiconductor wafer transported and placed in the light-radiant heating furance to heat mainly a central major part thereof, and said subsidiary heater having a ring shape which extends along a peripheral portion of the semiconductor wafer to heat principally the peripheral portion, the method comprising determining actuation curves for said main heater and said subsidiary heater, and actuating said main heater and said subsidiary heater repeatedly in accordance with their respective actuation curves in synchronization with intermittent transportation of the semiconductor wafers into said light-radiant heating furnace.
Claim 3
Dependent Claim
16 words
A method as claimed in claim 1, wherein said main heater is constructed of halogen lamps.
Claim 4
Dependent Claim
29 words
A method as claimed in claim 1, wherein said subsidiary heater serves as a carrier which supports and transports each of said semiconductor wafers into said light-radiant heating furnace.
Claim 5
Dependent Claim
91 words
A method as claimed in claim 1, wherein said main heater is actuated at an initial actuation time point with respect to the transportation of each semiconductor wafer into said light-radiant heating furnace, and said subsidiary heater is actuated at an initial actuation time point with respect to the transportation of each semiconductor wafer into said light-radiant heating furnace, and the time relationship between the initial actuation time point of the main heater and the initial actuation time point of the subsidiary heater is constant for all of said semiconductor wafers.
Claim 6
Independent Claim
156 words
A method for heating semiconductor wafers comprising: providing a light-radiant heating furnace including a main heater for heating mainly a central major part of each semiconductor wafer, said main heater having tubular lamps arranged substantially in a phone so as to define a plane light source unit, and a subsidiary heater for heating principally a peripheral portion of each semiconductor wafer, said subsidiary heater having a ring shape extending along said peripheral portion; determining actuation curves of electric potential as a function of time for said main heater and said subsidiary heater, respectively; intermittently transporting the semiconductor wafers into said light-radiant heating furnace; and actuating said main heater to heat mainly the central major part of each semiconductor wafer and said subsidiary heater to heat principally the peripheral portion of each semiconductor wafer repeatedly in accordance with their respective actuation curves in synchronization with said intermittent transporting of the semiconductor wafers into said light-radiant heating furnace.
Claim 7
Independent Claim
156 words
A method for heating semiconductor wafers comprising: providing a light-radiant heating furnace including a main heater for heating mainly a central major part of each semiconductor wafer, said main heater having tubular lamps arranged substantially in a phone so as to define a plane light source unit, and a subsidiary heater for heating principally a peripheral portion of each semiconductor wafer, said subsidiary heater having a ring shape extending along said peripheral portion; determining actuation curves of electric potential as a function of time for said main heater and said subsidiary heater, respectively; intermittently transporting the semiconductor wafers into said light-radiant heating furnace; and actuating said main heater to heat mainly the central major part of each semiconductor wafer and said subsidiary heater to heat principally the peripheral portion of each semiconductor wafer repeatedly in accordance with their respective actuation curves in synchronization with said intermittent transporting of the semiconductor wafers into said light-radiant heating furnace.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-15 | 1988-07-16 | 1989-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-15 | 1992-07-16 | 1993-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-15 | 1996-07-16 | 1997-01-15 | $7700.00 | Window Closed / Lapsed |