US4492852A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Growth substrate heating arrangement for UHV silicon MBE
Assignee: Nokia Bell Labs
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Filing: 1983-02-11
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Granted: 1985-01-08
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Expires: 2003-02-11
Abstract
Abstract A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship. The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100° C. for silicon) regardless of the DC current applied to the filament.
Inventors
- 👤 Sean N. Finegan
- 👤 James H. McFee
- 👤 Robert G. Swartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 06:50
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B23/06
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
129 words
In an evacuable chamber adapted for use in a molecular beam epitaxy system, a substrate heating arrangement including filament means responsive to an applied current for generating thermal energy, container means for forming an enclosure around said filament means, said container means including an aperture on at least one surface, first and second semiconductor substrates, said first semiconductor substrate regulating the temperature on the surface of said second semiconductor substrate to be not greater than a predetermined temperature for any current applied to said filament means, siad second semiconductor substrate being a growth substrate, and substrate support means for holding said first and second substrates in a substantially parallel, spaced-apart relationship with respect to each other, said substrate support means being mounted to said container means at said aperture.
Claim 2
Dependent Claim
129 words
In an evacuable chamber adapted for use in a molecular beam epitaxy system, a substrate heating arrangement including filament means responsive to an applied current for generating thermal energy, container means for forming an enclosure around said filament means, said container means including an aperture on at least one surface, first and second semiconductor substrates, said first semiconductor substrate regulating the temperature on the surface of said second semiconductor substrate to be not greater than a predetermined temperature for any current applied to said filament means, siad second semiconductor substrate being a growth substrate, and substrate support means for holding said first and second substrates in a substantially parallel, spaced-apart relationship with respect to each other, said substrate support means being mounted to said container means at said aperture.
Claim 3
Dependent Claim
42 words
The arrangement as defined in claim 1 wherein the filament means includes first and second filaments being parallel to and spaced apart from each other, and conductor means connected in circuit with the first and second filament for applying a current thereto.
Claim 4
Dependent Claim
30 words
The arrangement as defined in claim 1 wherein at least said first semiconductor substrate is comprised of silicon and is interposed between said filament means and said second semiconductor substrate.
Claim 5
Independent Claim
123 words
A method of heating a semiconductor growth substrate in an evacuable chamber of a molecular beam epitaxy system, the method including the steps of, applying a current to a metallic filament for radiating thermal energy having a first set of spectral components, absorbing at least a portion of the radiated thermal energy in an intermediate semiconductor substrate located between the metallic filament and the semiconductor growth substrate, radiating thermal energy having a second set of spectral components from the intermediate semiconductor substrate in a uniformly distributed pattern, and regulating the temperature on a surface of the semiconductor growth substrate via the intermediate semiconductor substrate so that said temperature is not greater than a predetermined temperature for any current applied to the metallic filament.
Claim 6
Independent Claim
123 words
A method of heating a semiconductor growth substrate in an evacuable chamber of a molecular beam epitaxy system, the method including the steps of, applying a current to a metallic filament for radiating thermal energy having a first set of spectral components, absorbing at least a portion of the radiated thermal energy in an intermediate semiconductor substrate located between the metallic filament and the semiconductor growth substrate, radiating thermal energy having a second set of spectral components from the intermediate semiconductor substrate in a uniformly distributed pattern, and regulating the temperature on a surface of the semiconductor growth substrate via the intermediate semiconductor substrate so that said temperature is not greater than a predetermined temperature for any current applied to the metallic filament.
Claim 7
Dependent Claim
31 words
The method as defined in claim 4 wherein the step of applying the current includes applying the current to first and second metallic filaments separated from and parallel to each other.
Claim 8
Dependent Claim
16 words
The method as defined in claim 4 wherein the intermediate semiconductor substrate is comprised of silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-08 | 1988-07-09 | 1989-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-08 | 1992-07-09 | 1993-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-08 | 1996-07-09 | 1997-01-08 | $7700.00 | Window Closed / Lapsed |