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US4492810A
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Optimized doped and band gap adjusted photoresponsive amorphous alloys and devices
Assignee: Sovonics Solar Systems
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Filing: 1982-11-19
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Granted: 1985-01-08
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Expires: 2002-11-19
Abstract
Abstract The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of the adjusting element(s) to the alloy in layers or clusters adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsiveness without deleteriously adding states in the gap which decrease the efficiency of the devices. The dopants also are added in thin enough layers or clusters between undoped layers or portions so that the optical and electronic properties of the resulting alloys are not degraded. The dopants and adjusting element(s) can be added in varying amounts, in discrete layers and/or clusters or in substantially constant amounts in the alloys and devices.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10F; H10F71/00; H10F71/10; H10F71/103; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 86
Claim 1
Independent Claim
81 words
A method of making an improved photoresponsive amorphous alloy, said method comprising depositing on a substrate a material including at least silicon and incorporating in said material at least one density of states reducing element and introducing at least one dopant or band gap adjusting element into said material without substantially increasing the effective states in the band gap to produce an optimized alloy, at least one portion of said material being formed with a plurality of substantially discrete subportions therein.
Claim 2
Independent Claim
81 words
A method of making an improved photoresponsive amorphous alloy, said method comprising depositing on a substrate a material including at least silicon and incorporating in said material at least one density of states reducing element and introducing at least one dopant or band gap adjusting element into said material without substantially increasing the effective states in the band gap to produce an optimized alloy, at least one portion of said material being formed with a plurality of substantially discrete subportions therein.
Claim 3
Dependent Claim
28 words
The method as defined in claim 1 wherein said alloy has a band gap adjusted for a specified photoresponse wavelength threshold, said band gap adjusting element being germanium.
Claim 4
Dependent Claim
37 words
The method as defined in claim 2 wherein said alloy is glow discharge deposited from at least a mixture of a gaseous compound containing at least Ge and said at least one density of states reducing element.
Claim 5
Dependent Claim
18 words
The method as defined in claim 3 wherein said mixture includes up to one percent GeH 4 .
Claim 6
Dependent Claim
10 words
An amorphous alloy made by the process of claim 4.
Claim 7
Dependent Claim
10 words
An amorphous alloy made by the process of claim 3.
Claim 8
Dependent Claim
10 words
An amorphous alloy made by the process of claim 2.
Claim 9
Dependent Claim
16 words
The method as defined in claim 1 wherein said density of states reducing element is fluorine.
Claim 10
Dependent Claim
22 words
The method as defined in claim 8 further including introducing a second density of states reducing element, said second element being hydrogen.
Claim 11
Dependent Claim
29 words
The method as defined in claim 9 wherein both said density of states reducing elements are incorporated into said depositing alloy substantially simultaneously with said band gap adjusting element.
Claim 12
Dependent Claim
10 words
An amorphous alloy made by the process of claim 8.
Claim 13
Dependent Claim
16 words
The method as defined in claim 1 wherein said density of states reducing element is hydrogen.
Claim 14
Dependent Claim
22 words
The method as defined in claim 12 further including introducing a second density of states reducing element, said second element being fluorine.
Claim 15
Dependent Claim
29 words
The method as defined in claim 13 wherein both said density of states reducing elements are incorporated into said depositing alloy substantially simultaneously with said band gap adjusting element.
Claim 16
Dependent Claim
31 words
The method as defined in claim 1 wherein said alloy is deposited with an active photoresponsive region therein and said band gap adjusting element is introduced at least in said region.
Claim 17
Dependent Claim
86 words
The method as defined in claim 1 wherein said method forms one step in a multi-step process for forming successively deposited alloy layers of opposite (p and n) conductivity type, the n-type layer being formed by introducing during the deposition of the layer an n-dopant element which is deposited with the deposited layer to produce an n-type layer and the p-type layer being formed by introducing during deposition of the layer a p-dopant element which is deposited with the deposited layer to produce a p-type layer.
Claim 18
Dependent Claim
46 words
The method as defined in claim 16 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein, at least a portion of said intrinsic layer containing said band gap adjusting element.
Claim 19
Dependent Claim
26 words
The method as defined in claim 16 wherein at least one of said opposite conductivity type layers is introduced into said alloy in substantially discrete layers.
Claim 20
Dependent Claim
10 words
An amorphous alloy made by the process of claim 18.
Claim 21
Dependent Claim
25 words
The method as defined in claim 16 wherein at least one of said opposite conductivity type layers is introduced into said alloy in varying amounts.
Claim 22
Dependent Claim
10 words
An amorphous alloy made by the process of claim 20.
Claim 23
Dependent Claim
27 words
The method as defined in claim 16 wherein at least one of said opposite conductivity type layers is introduced into said alloy with substantially discrete clusters therein.
Claim 24
Dependent Claim
20 words
The method as defined in claim 1 wherein said dopant element is incorporated into said alloy in substantially discrete layers.
Claim 25
Dependent Claim
10 words
An amorphous alloy made by the process of claim 14.
Claim 26
Dependent Claim
22 words
The method as defined in claim 1 wherein said band gap adjusting element is introduced into said alloy in substantially discrete layers.
Claim 27
Dependent Claim
10 words
An amorphous alloy made by the process of claim 25.
Claim 28
Dependent Claim
21 words
The method as defined in claim 1 wherein said band gap adjusting element is introduced into said alloy in varying amounts.
Claim 29
Dependent Claim
10 words
An amorphous alloy made by the process of claim 27.
Claim 30
Dependent Claim
19 words
The method as defined in claim 1 wherein said dopant element is introduced into said alloy in varying amounts.
Claim 31
Dependent Claim
10 words
An amorphous alloy made by the process of claim 29.
Claim 32
Dependent Claim
19 words
The method as defined in claim 1 wherein said dopant is incorporated into said alloy in substantially discrete clusters.
Claim 33
Dependent Claim
22 words
The method as defined in claim 1 wherein said band gap adjusting element is incorporated into said alloy in substantially discrete clusters.
Claim 34
Dependent Claim
21 words
The method as defined in claim 1 including evaporating said band gap adjusting element prior to introducing it into said alloy.
Claim 35
Dependent Claim
21 words
The method as defined in claim 33 including plasma activating said adjusting element as it is being introduced into said alloy.
Claim 36
Dependent Claim
17 words
The method as defined in claim 34 including activating said adjusting element by plasma activated vapor deposition.
Claim 37
Dependent Claim
38 words
The method as defined in claim 1 wherein said method includes depositing at least a portion of said alloy with one of a p or n dopant element therein to form a p or n conductivity type alloy.
Claim 38
Dependent Claim
15 words
The method as defined in claim 1 wherein said discrete subportions are formed in layers.
Claim 39
Dependent Claim
15 words
The method as defined in claim 1 wherein said discrete subportions are formed in clusters.
Claim 40
Dependent Claim
10 words
An amorphous alloy made by the process of claim 1.
Claim 41
Dependent Claim
60 words
An improved photoresponsive amorphous alloy, said alloy including silicon and incorporating at least one density of states reducing element therein, said alloy having one of a band gap adjusting element or dopant incorporated therein without substantially increasing the effective states in the gap, at least a portion of said alloy being formed with a plurality of substantially discrete subportions therein.
Claim 42
Dependent Claim
60 words
An improved photoresponsive amorphous alloy, said alloy including silicon and incorporating at least one density of states reducing element therein, said alloy having one of a band gap adjusting element or dopant incorporated therein without substantially increasing the effective states in the gap, at least a portion of said alloy being formed with a plurality of substantially discrete subportions therein.
Claim 43
Dependent Claim
29 words
The alloy as defined in claim 40 wherein said alloy includes a band gap adjusted for a specified photoresponse wavelength threshold, and said band gap adjusting element is germanium.
Claim 44
Dependent Claim
25 words
The alloy in claim 40 wherein said alloy has an active photoresponsive region therein and said adjusting element is included at least in said region.
Claim 45
Dependent Claim
16 words
The alloy as defined in claim 40 wherein said density of states reducing element is fluorine.
Claim 46
Dependent Claim
22 words
The alloy as defined in claim 43 further including a second density of states reducing element incorporated therein, said element being hydrogen.
Claim 47
Dependent Claim
16 words
The alloy as defined in claim 40 wherein said density of states reducing element is hydrogen.
Claim 48
Dependent Claim
22 words
The alloy as defined in claim 45 further including a second density of states reducing element incorporated therein, said element being fluorine.
Claim 49
Dependent Claim
12 words
The alloy as defined in claim 40 deposited by glow discharge deposition.
Claim 50
Dependent Claim
15 words
The alloy as defined in claim 40 including said adjusting element in substantially discrete layers.
Claim 51
Dependent Claim
14 words
The alloy as defined in claim 40 including said dopant in substantially discrete layers.
Claim 52
Dependent Claim
15 words
The alloy as defined in claim 40 including said adjusting element in substantially discrete clusters.
Claim 53
Dependent Claim
14 words
The alloy as defined in claim 40 including said dopant in substantially discrete clusters.
Claim 54
Dependent Claim
14 words
The alloy as defined in claim 40 including said adjusting element in varying amounts.
Claim 55
Dependent Claim
13 words
The alloy as defined in claim 40 including said dopant in varying amounts.
Claim 56
Dependent Claim
29 words
The alloy as defined in claim 40 including at least one of an n or p conductivity portion therein, said portion including an n or p dopant element therein.
Claim 57
Dependent Claim
24 words
The alloy as defined in claim 54 wherein at least one of said n or p conductivity portions is formed in substantially discrete layers.
Claim 58
Dependent Claim
25 words
The alloy as defined in claim 54 wherein at least one of said n or p conductivity portions is formed with substantially discrete clusters therein.
Claim 59
Dependent Claim
26 words
The alloy as defined in claim 54 wherein at least one of said n or p conductivity portions is formed with varying amounts of dopants therein.
Claim 60
Dependent Claim
95 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including at least one density of states reducing element, said alloy further including one of a dopant or a band gap adjusting element therein to enhance the radiation absorption thereof without substantially increasing the effective states in the gap, at least one of said layers being formed with a plurality of substantially discrete subportions therein.
Claim 61
Dependent Claim
95 words
An improved photoresponsive device, said device comprising superimposed layers of various materials including an amorphous semiconductor alloy body having an active photoresponsive region including a band gap therein upon which radiation can impinge to produce charge carriers, said amorphous alloy including at least one density of states reducing element, said alloy further including one of a dopant or a band gap adjusting element therein to enhance the radiation absorption thereof without substantially increasing the effective states in the gap, at least one of said layers being formed with a plurality of substantially discrete subportions therein.
Claim 62
Dependent Claim
30 words
The device as defined in claim 58 wherein the band gap of said alloy is adjusted for a specified photoresponse wavelength threshold, said band gap being less than 1.6 eV.
Claim 63
Dependent Claim
15 words
The device as defined in claim 59 wherein said band gap adjusting element is germanium.
Claim 64
Dependent Claim
83 words
The device as defined in claim 58 wherein said alloy body is a multi-layer body formed of successively deposited layers of opposite (p and n) conductivity type, the n-type layer being formed by introducing during the deposition of the layer an n-dopant element which is deposited with the deposited layer to produce an n-type layer and the p-type layer being formed by introducing during deposition of the layer a p-dopant element which is deposited with the deposited layer to produce a p-type layer.
Claim 65
Dependent Claim
46 words
The device as defined in claim 61 wherein there is deposited between said p and n doped layers an intrinsic amorphous alloy layer without a p or n dopant element present therein, at least a portion of said intrinsic layer containing said band gap adjusting element.
Claim 66
Dependent Claim
25 words
The device as defined in claim 61 wherein said alloy body includes at least one of said opposite conductivity type layers in substantially discrete sublayers.
Claim 67
Dependent Claim
27 words
The device as defined in claim 61 wherein said alloy body includes at least one of said opposite conductivity type layers having varying amounts of dopants therein.
Claim 68
Dependent Claim
24 words
The device as defined in claim 61 wherein at least one of said opposite conductivity type layers includes substantially discrete portions of dopants therein.
Claim 69
Dependent Claim
16 words
The device as defined in claim 58 wherein said density of states reducing element is fluorine.
Claim 70
Dependent Claim
22 words
The device as defined in claim 66 further including a second density of states reducing element incorporated therein, said element being hydrogen.
Claim 71
Dependent Claim
16 words
The device as defined in claim 58 wherein said density of states reducing element is hydrogen.
Claim 72
Dependent Claim
22 words
The device as defined in claim 68 further including a second density of states reducing element incorporated therein, said element being fluorine.
Claim 73
Dependent Claim
12 words
The device as defined in claim 58 deposited by glow discharge deposition.
Claim 74
Dependent Claim
21 words
The device as defined in claim 58 wherein said alloy body includes said band gap adjusting element in substantially discrete sublayers.
Claim 75
Dependent Claim
18 words
The device as defined in claim 58 wherein said alloy body includes said dopant in substantially discrete sublayers.
Claim 76
Dependent Claim
20 words
The device as defined in claim 58 wherein said alloy body includes said band gap adjusting element in varying amounts.
Claim 77
Dependent Claim
17 words
The device as defined in claim 58 wherein said alloy body includes said dopant in varying amounts.
Claim 78
Dependent Claim
21 words
The device as defined in claim 58 wherein said alloy body includes said band gap adjusting element in substantially discrete clusters.
Claim 79
Dependent Claim
18 words
The device as defined in claim 58 wherein said alloy body includes said dopant in substantially discrete clusters.
Claim 80
Dependent Claim
33 words
The device as defined in claim 58 wherein said alloy body includes at least one of an n or p conductivity region therein, said region including an n or p dopant element therein.
Claim 81
Dependent Claim
19 words
The device as defined in claim 58 wherein said alloy body forms part of a Schottky barrier solar cell.
Claim 82
Dependent Claim
18 words
The device as defined in claim 58 wherein said alloy body forms part of an MIS solar cell.
Claim 83
Dependent Claim
18 words
The device as defined in claim 58 wherein said alloy body forms part of a p-n junction device.
Claim 84
Dependent Claim
17 words
The device as defined in claim 58 wherein said alloy body forms part of a p-i-n device.
Claim 85
Dependent Claim
16 words
The device as defined in claim 58 wherein said alloy body forms part of a photodetector.
Claim 86
Dependent Claim
19 words
The device as defined in claim 58 wherein said alloy body forms part of an electrostatic image producing device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-01-08 | 1988-07-09 | 1989-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-01-08 | 1992-07-09 | 1993-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-01-08 | 1996-07-09 | 1997-01-08 | $7700.00 | Window Closed / Lapsed |