Three-mirror active-passive semiconductor laser

Claim 2

In a semiconductor laser, a semiconductor heterostructure, comprising: an active laser region epilayered to a waveguide that extends beyond the longitudinal dimension of said active laser region on one end of said waveguide; a first mirror integral to a first longitudinal end of said active laser layer and integral to a first longitudinal end of said waveguide, a second mirror integral to the opposite longitudinal end of said waveguide; and a third mirror integral to the opposite longitudinal end of said active laser layer; wherein the longitudinal dimension between said first mirror and said third mirror defines an active laser cavity of said structure, and the portion of said waveguide that extends beyond said active laser cavity forms a passive laser cavity of said structure; and the length of said active cavity and the length of said passive cavity are each equal to an integral number of half wavelengths of the same laser frequency.

Claim 3

The structure of claim 1 wherein the length of said passive cavity is approximately one-tenth the length of said active cavity.

Claim 4

The structure of claim 1 wherein said third mirror is at an abrupt step in said structure that is substantially perpendicular to the axis of said longitudinal dimensions.

Claim 5

The structure of claim 1 wherein the gain curve of said structure is temperature dependent and the temperature of said structure is such that the peak of said curve is at a passive cavity resonance.

Claim 6

In a single longitudinal mode semiconductor laser of epilayer structure, comprising: a semiconductor substrate having a buffer layer separating said substrate from the other layers of said epilayer structure; a first isolation layer of a first conduction type provided on said buffer layer; an active layer of semiconductor material having a relatively narrow band gap, provided on said isolation layer; a second isolation layer of a second conduction type provided on said active layer; a cap layer of said second conduction type provided on said second isolation layer; and a coating layer with electrical contact, provided on said cap layer; wherein said second isolation layer, said cap layer, said coating layer and said active layer have a longitudinal dimension that is equal to a first integral number of half wavelengths of a laser frequency correlated to said band gap; and wherein said substrate and said first isolation layer have a longitudinal dimension greater than the longitudinal dimension of said second isolation layer, said cap layer and said coating layer and said active layer, by an amount equal to a second integral number of half wavelengths of said laser frequency.

Claim 7

In a single longitudinal mode semiconductor laser of epilayer structure, comprising: a semiconductor substrate having a buffer layer separating said substrate from the other layers of said epilayer structure; a first isolation layer of a first conduction type provided on said buffer layer; an active layer of semiconductor material having a relatively narrow band gap, provided on said isolation layer; a second isolation layer of a second conduction type provided on said active layer; a cap layer of said second conduction type provided on said second isolation layer; and a coating layer with electrical contact, provided on said cap layer; wherein said second isolation layer, said cap layer, said coating layer and said active layer have a longitudinal dimension that is equal to a first integral number of half wavelengths of a laser frequency correlated to said band gap; and wherein said substrate and said first isolation layer have a longitudinal dimension greater than the longitudinal dimension of said second isolation layer, said cap layer and said coating layer and said active layer, by an amount equal to a second integral number of half wavelengths of said laser frequency.

Claim 8

The laser of claim 5 wherein said substrate is GaAs, said first isolation layer is n-type AlGaAs, said active layer is GaAs, said second isolation layer is p-type AlGaAs, said cap layer is p-type GaAs, and said coating layer is SiO 2 .