Heterostructure lasers with combination active strip and passive waveguide strip

Claim 2

In a heterostructure laser comprising a plurality of contiguous semiconductor layers epitaxially deposited on a substrate, one of said layers being an active region and having a lower bandgap and higher index of refraction than at least cladding layers immediately adjacent to the active region to permit carrier recombination and support radiation propagation between transverse end facets of the laser under lasing conditions, means incorporated on and/or in said laser to confine current to a portion of said active region, means in said active region to optically confine radiation propagating therein in both dimensions transverse to the direction of propagation, the extremities of said active region means falling short of said end facets, passive waveguide means extending from said end facets and optically coupled to said active region means to receive at least a portion of said propagating radiation, said passive waveguide means optically confining radiation propagating therein in both dimensions transverse to the direction of propagation, said passive waveguide means is an elongated strip contiguous to a surface of said active region means, said passive waveguide strip being of full extent between said end facets with the ends of said active region means being taper coupled to said passive waveguide strip.

Claim 3

In the heterostructure laser of claim 1, a barrier strip of very thin cross-sectional thickness formed between said active region means and passive waveguide strip, the minimum thickness of said barrier strip being sufficient to confine injected carriers to the active region means but permitting extension of the radiation propagation into said passive waveguide strip.

Claim 4

In the heterostructure laser of claim 1, a second passive waveguide strip contiguous to the surface of said active region means on the side thereof remote to the first passive waveguide strip.

Claim 5

In a heterostructure laser comprising a plurality of contiguous semiconductor layers epitaxially deposited on a substrate, one of said layers being an active layer with an active region and having a lower bandgap and higher index of refraction than at least cladding layers immediately adjacent to the active region to permit carrier recombination and support radiation propagation between transverse end facets of the laser under lasing conditions, means incorporated on and/or in said laser to confine current to a portion of said active region, means in said active region to optically confine radiation propagating therein in both dimensions transverse to the direction of propagation, the extremities of said active region means falling short of said end facets, passive waveguide means extending from said end facets and optically coupled to said active region means to receive at least a portion of said propagating radiation, said passive waveguide means optically confining radiation propagating therein in both dimensions transverse to the direction of propagation, said active region comprising a centrally located preferential diffusion region through said active layer to form a junction therein, said diffusion region falling short of said end facets, a nonplanar passive waveguide layer contiguous with said active region on the surface thereof remote from said diffusion region, said waveguide layer having an elongated thick region aligned with said diffusion region extending between said end facets, said passive waveguide means comprising the combination of said passive waveguide layer thick region and the undiffused regions of said active region.

Claim 6

In a heterostructure laser comprising a plurality of contiguous semiconductor layers epitaxially deposited on a substrate, one of said layers being an active layer with an active region and having a lower bandgap and higher index of refraction than at least cladding layers immediately adjacent to the active region to permit carrier recombination and support radiation propagation between transverse end facets of the laser under lasing conditions, means incorporated on and/or in said laser to confine current to a portion of said active region, means in said active region to optically confine radiation propagating therein in both dimensions transverse to the direction of propagation, the extremities of said active region means falling short of said end facets, passive waveguide means extending from said end facets and optically coupled to said active region means to receive at least a portion of said propagating radiation, said passive waveguide means optically confining radiation propagating therein in both dimensions transverse to the direction of propagation, said active region comprising a centrally located preferential diffusion region through said active layer to form a junction therein, said diffusion region falling short of said end facets, a nonplanar passive waveguide layer contiguous with said active region on the surface thereof remote from said diffusion region, said waveguide layer having an elongated thick region aligned with said diffusion region extending between said end facets, said passive waveguide means comprising the combination of said passive waveguide layer thick region and the undiffused regions of said active region.

Claim 7

In a heterostructure laser comprising a plurality of contiguous semiconductor layers epitaxially deposited on a substrate, one of said layers including an active layer having an active region and having a lower bandgap and higher index of refraction than at least cladding layers immediately adjacent to the active region to permit carrier recombination and support radiation propagation between transverse end facets of the laser under lasing conditions, means incorporated on and/or in said laser to confine current to a portion of said active region, means in said active region to optically confine radiation propagating therein in both dimensions transverse to the direction of propagation, passive waveguide means extending from said end facets and optically coupled to said active region means to receive at least a portion of said propagating radiation, means associated with said substrate to cause lateral waveguidance of said propagating radiation, said active region comprising a centrally located preferential diffusion region extending into said active layer such that radiation generated in said active region is not absorbed by the undiffused portions of said active layer, said passive waveguide means including said undiffused active layer portions.

Claim 8

In a heterostructure laser comprising a plurality of contiguous semiconductor layers epitaxially deposited on a substrate, one of said layers including an active layer having an active region and having a lower bandgap and higher index of refraction than at least cladding layers immediately adjacent to the active region to permit carrier recombination and support radiation propagation between transverse end facets of the laser under lasing conditions, means incorporated on and/or in said laser to confine current to a portion of said active region, means in said active region to optically confine radiation propagating therein in both dimensions transverse to the direction of propagation, passive waveguide means extending from said end facets and optically coupled to said active region means to receive at least a portion of said propagating radiation, means associated with said substrate to cause lateral waveguidance of said propagating radiation, said active region comprising a centrally located preferential diffusion region extending into said active layer such that radiation generated in said active region is not absorbed by the undiffused portions of said active layer, said passive waveguide means including said undiffused active layer portions.

Claim 9

In the heterostructure laser of claim 5 wherein said associated substate means comprises a channel in the surface of said substrate.

Claim 10

In the heterostructure of claim 5 wherein said passive waveguide means further includes a passive waveguide layer between said active layer and one of said cladding layers.

Claim 11

In the heterostructure of claim 7 wherein said passive waveguide layer is nonplanar.