US4297652A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Injection-type semiconductor laser
Assignee: NEC Corp
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Filing: 1979-10-09
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Granted: 1981-10-27
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Expires: 1999-10-09
Abstract
Abstract A semiconductor laser having a double heterostructure configuration is provided with a light waveguide layer extending between a pair of mirrors. A thin active layer is disposed adjacent to the waveguide layer, and is formed in the shape of a stripe having a width of approximately 5 μm. The stripe is shorter in axial length than the waveguide, such that the ends of the stripe are spaced from the mirrors by a distance of 30 to 60 μm.
Inventors
- 👤 Izuo Hayashi
- 👤 Hiroo Yonezu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/164
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
102 words
In a semiconductor laser having a multi-layer structure formed on a substrate and two opposing cleaved surfaces, said semiconductor laser comprising: a first semiconductor layer for guiding a laser beam; an active layer disposed in contact with said first semiconductor layer, said active layer being formed in the shape of a stripe, said stripe having substantially planar ends which are spaced from said cleaved surfaces; a third semiconductor layer burying said active stripe; a first electrode for supplying a first electric potential through said third semiconductor layer; and a second electrode formed on said substrate for supplying a second electric potential thereto.
Claim 2
Dependent Claim
102 words
In a semiconductor laser having a multi-layer structure formed on a substrate and two opposing cleaved surfaces, said semiconductor laser comprising: a first semiconductor layer for guiding a laser beam; an active layer disposed in contact with said first semiconductor layer, said active layer being formed in the shape of a stripe, said stripe having substantially planar ends which are spaced from said cleaved surfaces; a third semiconductor layer burying said active stripe; a first electrode for supplying a first electric potential through said third semiconductor layer; and a second electrode formed on said substrate for supplying a second electric potential thereto.
Claim 3
Dependent Claim
20 words
A semiconductor laser as claimed in claim 1, wherein the width of said active layer stripe is approximately 5 μm.
Claim 4
Dependent Claim
29 words
A semiconductor laser as claimed in claim 1, wherein the ends of said active layer stripe are spaced from said mirrors by a distance of 30 to 60 μm.
Claim 5
Dependent Claim
24 words
A semiconductor laser as claimed in claim 1, wherein said third semiconductor layer has a conductivity type opposite that of said first semiconductor layer.
Claim 6
Dependent Claim
51 words
A semiconductor laser as claimed in claim 1, said third semiconductor layer having a first portion of a conductivity type opposite the conductivity type of said first semiconductor layer and being formed over said active layer, and having a second portion having the same conductivity type as said first semiconductor layer.
Claim 7
Dependent Claim
18 words
A semiconductor laser as claimed in claim 5, wherein an insulative film is formed over said second portion.
Claim 8
Dependent Claim
18 words
A semiconductor laser as claimed in claim 5, wherein said active layer is formed as a segmented stripe.
Claim 9
Dependent Claim
28 words
A semiconductor laser as claimed in claim 5, wherein the ends of said segmented stripe are spaced from said mirrors by a distance of 30 to 60 μm.
Claim 10
Dependent Claim
161 words
In a semiconductor laser having a multi-layer structure formed on a substrate and two opposing cleaved surfaces, said semiconductor laser comprising: a first semiconductor layer for guiding a laser beam; an active layer disposed in contact with said first semiconductor layer, said active layer being formed in the shape of a segmented stripe, said segmented stripe at both ends having substantially planar ends which are spaced from said cleaved surfaces; a third semiconductor layer of a first conductivity type formed between adjacent portions of said segmented stripe and between each of said cleaved surfaces and said segmented stripe at both ends thereof; a fourth semiconductor layer of the opposite conductivity type with respect to said first conductivity type formed in contact with said segmented stripe; an insulating layer covering said third semiconductor layer; a first electrode for supplying an electric potential through said fourth semiconductor layer; and a second electrode formed on said substrate for supplying a second electric potential thereto.
Claim 11
Dependent Claim
161 words
In a semiconductor laser having a multi-layer structure formed on a substrate and two opposing cleaved surfaces, said semiconductor laser comprising: a first semiconductor layer for guiding a laser beam; an active layer disposed in contact with said first semiconductor layer, said active layer being formed in the shape of a segmented stripe, said segmented stripe at both ends having substantially planar ends which are spaced from said cleaved surfaces; a third semiconductor layer of a first conductivity type formed between adjacent portions of said segmented stripe and between each of said cleaved surfaces and said segmented stripe at both ends thereof; a fourth semiconductor layer of the opposite conductivity type with respect to said first conductivity type formed in contact with said segmented stripe; an insulating layer covering said third semiconductor layer; a first electrode for supplying an electric potential through said fourth semiconductor layer; and a second electrode formed on said substrate for supplying a second electric potential thereto.
Claim 12
Dependent Claim
21 words
A semiconductor laser as claimed in claim 9, wherein the distances between said adjacent portions of said segmented stripe are constant.
References Cited (Backward Citations)
US3978426A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-10-26 | 1985-04-27 | 1985-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-10-26 | 1989-04-27 | 1989-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-10-26 | 1993-04-27 | 1993-10-27 | $7700.00 | Window Closed / Lapsed |