Method for producing Schottky diodes

Claim 1

Method for manufacturing Schottky diodes which have a doped self-aligning guard ring in the fringe region of the Schottky contact in the semiconductor layer underneath, which comprises applying a first intermediate layer to a semiconductor surface to be implanted, covering the first intermediate layer with a photoresist mask with gaps, etching off the first intermediate layer in the gaps of the photoresist mask down to the semiconductor surface, and also underetching the first intermediate layer underneath the photoresist mask at the edges of the edges of the photoresist mask within the gaps, depositing a second intermediate metal layer on the photoresist mask and in the gaps of the photoresist mask over the entire surfaces, removing the second intermediate layer and photoresist mask except for the second intermediate metal layer in the gaps to form an implantation mask with openings therein to permit implantation, from part of the first intermediate layer applied to the semiconductor surface to be implanted and from part of the second intermediate layer applied to the semiconductor surface to be implanted, implanting the guard ring through the openings in the implanting mask in the semiconductor beneath the implanting mask, removing the remainder of the second intermediate layer, thereafter activating the implanted guard ring and subsequently covering the semiconductor surface with a Schottky metal of at least the subregion of the guard ring adjacent to the Schottky contact.