US4310362A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making Schottky diode with an improved voltage behavior
Assignee: Thales SA
•
Filing: 1980-06-20
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Granted: 1982-01-12
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Expires: 2000-06-20
Abstract
Abstract The voltage behaviour of a Schottky diode is improved by providing a Schottky diode of the type comprising an epitaxial layer locally covered with a metal layer and by depleting the space charge zone in the epitaxial layer at the periphery of the metal layer. This depletion is obtained by implanting ions counter balancing the initial doping of the epitaxial layer.
Inventors
- 👤 Marcel Roche
- 👤 Jean P. Litot
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D8/00; H10D8/60; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/139
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
87 words
A process for improving the behaviour under voltage of a Schottky diode, comprising an epitaxial layer doped according to a first conductivity type, a metal layer establishing the Schottky contact with a surface portion of the epitaxial layer and a metal guard ring on a chamfered insulating layer at the periphery of the surface portion, said process consisting in depleting the space charge zone at the periphery of the diode by local reduction of the doping level of the epitaxial layer, while maintaining the same conductivity type.
Claim 2
Dependent Claim
87 words
A process for improving the behaviour under voltage of a Schottky diode, comprising an epitaxial layer doped according to a first conductivity type, a metal layer establishing the Schottky contact with a surface portion of the epitaxial layer and a metal guard ring on a chamfered insulating layer at the periphery of the surface portion, said process consisting in depleting the space charge zone at the periphery of the diode by local reduction of the doping level of the epitaxial layer, while maintaining the same conductivity type.
Claim 3
Dependent Claim
41 words
The process as claimed in claim 1, wherein, after masking the n-type epitaxial layer deposited on a substrate of type n + , local reduction of the initial doping of the epitaxial layer is carried out by implantation of boron ions.
Claim 4
Dependent Claim
90 words
The process as claimed in claim 2, wherein the initial doping of the n-type epitaxial layer is first counterbalanced locally, then there is deposited on the assembly an oxide layer (SiO 2 ), whose upper part is doped, and in which an aperture is formed whose edge has a chamfered profile, the doping at the level of the Schottky contact is adjusted by implantation of ions for defining perfectly the Schottky barrier height, and then an appropriate metal is deposited on the entire structure at the level of the contact.
Claim 5
Dependent Claim
38 words
The process as claimed in claim 3, wherein, during deposition of the metal at the Schottky contact, a metal guard ring is simultaneously deposited covering the periphery of the contact and continuous with the metal of the contact.
Claim 6
Dependent Claim
45 words
The process as claimed in one of claims 3 or 4, wherein, before surface doping the oxide layer, the rear face of the structure is deoxidized so that, during subsequent surface doping there occurs diffusion of the phosphorous forming a trapping network for metal impurities.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-01-11 | 1985-07-13 | 1986-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-01-11 | 1989-07-13 | 1990-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-01-11 | 1993-07-13 | 1994-01-12 | $7700.00 | Window Closed / Lapsed |