US4149905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of limiting stacking faults in oxidized silicon wafers
Assignee: AT&T Inc
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Filing: 1977-12-27
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Granted: 1979-04-17
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Expires: 1997-12-27
Abstract
Abstract Many of the stacking faults which occur after oxidation of silicon wafers are substantially eliminated by the use of an argon-hydrochloric anneal of the wafers just prior to oxidation. This anneal, which is carried out in the same chamber in which oxidation is carried out, removes impurities from the surface of the wafers and thereby limits the sites at which stacking faults form after oxidation.
Inventors
- 👤 Hyman J. Levinstein
- 👤 Robert B. Marcus
- 👤 Shyam P. Murarka
- 👤 Richard S. Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:25
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/18; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/65; H10P14/6502; H10P14/6512; H10P70/12; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/024
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
104 words
A process for fabricating a semiconductor device comprising a semiconductor body comprising the sequence of steps of: heating the device in a chamber in a gas mixture of an inert gas and hydrochloric acid with the hydrochloric acid being between approximately 0.1 percent and 1.0 percent in an approximate temperature range of between 900 degrees C and 1300 degrees C for a period of time between several minutes and several hours; and thereafter maintaining the semiconductor body in the chamber while changing the ambient gas mixture to an oxidizing gas for long enough to form an oxide on exposed portions of the semiconductor body.
Claim 2
Dependent Claim
104 words
A process for fabricating a semiconductor device comprising a semiconductor body comprising the sequence of steps of: heating the device in a chamber in a gas mixture of an inert gas and hydrochloric acid with the hydrochloric acid being between approximately 0.1 percent and 1.0 percent in an approximate temperature range of between 900 degrees C and 1300 degrees C for a period of time between several minutes and several hours; and thereafter maintaining the semiconductor body in the chamber while changing the ambient gas mixture to an oxidizing gas for long enough to form an oxide on exposed portions of the semiconductor body.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein the inert gas is argon.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-16 | 1982-10-16 | 1983-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-16 | 1986-10-16 | 1987-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-16 | 1990-10-16 | 1991-04-17 | $7700.00 | Window Closed / Lapsed |