Patent US4469529A successfully refreshed from Google Patents.
US4469529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
Assignee: Ushio Denki KK
•
Filing: 1982-11-30
•
Granted: 1984-09-04
•
Expires: 2002-11-30
Abstract
Abstract When heating a semiconductor wafer by means of application of radiated light, subsidiary heating means which elongates along the circumference of the wafer is employed to additionally heat or to preheat the circumferential portion of the wafer so as to make the temperature of the wafer uniform at the entire surface thereof. Use of such subsidiary heating means is effective to prevent the occurrence of such a damage as slip line or the like in the wafer.
Inventors
- 👤 Yoshiki Mimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:54
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; Y; Y10; Y10S; Y10S148/00; Y10S148/097
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
100 words
A method for heating a semiconductor wafer by means of application of light radiated from a light source, which method comprises the steps of arranging subsidiary electrical heating means adjacent to and extending along the circumference of the semiconductor wafer; and heating the semiconductor wafer by means of application of light radiated from the light source to the semiconductor wafer, including application of the light to the circumferential portion of the semiconductor wafer, while additionally heating the semiconductor wafer at its circumferential portion by the subsidiary heating means to thereby provide a uniform temperature across the surface of the wafer.
Claim 2
Independent Claim
100 words
A method for heating a semiconductor wafer by means of application of light radiated from a light source, which method comprises the steps of arranging subsidiary electrical heating means adjacent to and extending along the circumference of the semiconductor wafer; and heating the semiconductor wafer by means of application of light radiated from the light source to the semiconductor wafer, including application of the light to the circumferential portion of the semiconductor wafer, while additionally heating the semiconductor wafer at its circumferential portion by the subsidiary heating means to thereby provide a uniform temperature across the surface of the wafer.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein the subsidiary heating means comprises at least one thermic ray radiating lamp.
Claim 4
Dependent Claim
26 words
A method as claimed in claim 1, wherein the subsidiary heating means comprises at least one resistive heating element fabricated from a high fusing point metal.
Claim 5
Dependent Claim
45 words
A method as claimed in claim 1, wherein the light source comprises at least one plane light source, the plane light source comprising a plurality of tubular halogen lamps arranged adjacent to one another in a plane parallel to the surface of the semiconductor wafer.
Claim 6
Dependent Claim
19 words
A method as claimed in claim 1, wherein the semiconductor wafer has been pretreated by the ion implantation process.
Claim 7
Dependent Claim
16 words
A method as claimed in claim 3, wherein the resistive heating element is fabricated from molybdenum.
Claim 8
Dependent Claim
20 words
A method as claimed in claim 2, wherein the subsidiary heating means has hooks which support the semiconductor wafer thereon.
Claim 9
Independent Claim
99 words
A method for heating a semiconductor wafer by means of application of light radiated from a light source, which method comprises the steps of arranging subsidiary electrical heating means adjacent to and extending along the circumference of the semiconductor wafer; and heating the semiconductor wafer by means of application of light radiated from the light source to the semiconductor wafer, including application of the light to the circumferential portion of the semiconductor wafer, after preheating the semiconductor wafer at its circumferential portion by the subsidiary heating means to thereby provide a uniform temperature across the surface of the wafer.
Claim 10
Independent Claim
99 words
A method for heating a semiconductor wafer by means of application of light radiated from a light source, which method comprises the steps of arranging subsidiary electrical heating means adjacent to and extending along the circumference of the semiconductor wafer; and heating the semiconductor wafer by means of application of light radiated from the light source to the semiconductor wafer, including application of the light to the circumferential portion of the semiconductor wafer, after preheating the semiconductor wafer at its circumferential portion by the subsidiary heating means to thereby provide a uniform temperature across the surface of the wafer.
Claim 11
Dependent Claim
20 words
A method as claimed in claim 8, wherein the subsidiary heating means comprises at least one thermic ray radiating lamp.
Claim 12
Dependent Claim
26 words
A method as claimed in claim 8, wherein the subsidiary heating means comprises at least one resistive heating element fabricated from a high fusing point metal.
Claim 13
Dependent Claim
45 words
A method as claimed in claim 8, wherein the light source comprises at least one plane light source, the plane light source comprising a plurality of tubular halogen lamps arranged adjacent to one another in a plane parallel to the surface of the semiconductor wafer.
Claim 14
Dependent Claim
19 words
A method as claimed in claim 8, wherein the semiconductor wafer has been pretreated by the ion implantation process.
Claim 15
Dependent Claim
20 words
A method as claimed in claim 9, wherein the subsidiary heating means has hooks which support the semiconductor wafer thereon.
Claim 16
Dependent Claim
16 words
A method as claimed in claim 10, wherein the resistive heating element is fabricated from molybdehum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-04 | 1988-03-05 | 1988-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-04 | 1992-03-05 | 1992-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-04 | 1996-03-05 | 1996-09-04 | $7700.00 | Window Closed / Lapsed |