US4464459A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a pattern of metal elements
Assignee: Fujitsu Ltd
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Filing: 1982-06-25
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Granted: 1984-08-07
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Expires: 2002-06-25
Abstract
Abstract A method of forming a pattern of metal elements arranged with very small gaps therebetween on a substrate in magnetic bubble memory devices, semiconductor devices, and the like. In this method, first, a pattern forming layer having metal portions adapted for forming pattern elements and insulating portions for providing the gaps is formed on the substrate, and thereafter the pattern forming layer is processed by using a photolithograhic technique to form the pattern. By using this method, it is possible to form a permalloy propagation pattern with gaps of a size smaller than 1 μm in a magnetic bubble memory device, for example, by using conventional photolithograhic techniques.
Inventors
- 👤 Teiji Majima
- 👤 Kiyoshi Ozaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:40
CPC Classifications
G; G03; G03F; G03F7/00; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0875; G11C19/0883; H; H01; H01F; H01F41/00; H01F41/32; H01F41/34; H10; H10D; H10D86/00; H10D86/80; H10D86/85; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
102 words
A method of forming a pattern of metal elements on a substrate of a magnetic bubble memory or semiconductor device, comprising the steps of: forming a pattern forming layer on said substrate, said pattern forming layer having (i) portions of metal positioned in a plane substantially parallel to the plane of the substrate and spaced apart by a gap of less than 1 μm from which said pattern of metal elements is formed and (ii) portions of insulating materials interposed between said metal portions in said gaps; and processing said pattern forming layer by using photolithographic techniques to form said pattern therefrom.
Claim 2
Independent Claim
102 words
A method of forming a pattern of metal elements on a substrate of a magnetic bubble memory or semiconductor device, comprising the steps of: forming a pattern forming layer on said substrate, said pattern forming layer having (i) portions of metal positioned in a plane substantially parallel to the plane of the substrate and spaced apart by a gap of less than 1 μm from which said pattern of metal elements is formed and (ii) portions of insulating materials interposed between said metal portions in said gaps; and processing said pattern forming layer by using photolithographic techniques to form said pattern therefrom.
Claim 3
Dependent Claim
99 words
A method according to claim 1, wherein the step of forming said pattern forming layer comprises the steps of: forming a plurality of first metal portions spaced apart from each other on the substrate; forming said insulating portions on the side surfaces of said first metal portions; forming a plurality of second metal portions, each second metal portion being located between two of said first metal portions with said insulating portions interposed between each first and second metal portion on the substrate; and thereafter, performing lift-off of material deposited and formed beyond the surface of said first metal portion.
Claim 4
Dependent Claim
31 words
A method according to claim 2, wherein said first metal portions are formed by: forming a layer of metal on the substrate; and processing said metal layer by using photolithographic techniques.
Claim 5
Dependent Claim
30 words
A method according to claim 2, wherein said insulating portions are formed by depositing insulating materials on the side surfaces of said first metal portions by vapor deposition or sputtering.
Claim 6
Dependent Claim
82 words
A method according to claim 2, wherein said insultaing portions are formed on the side surfaces of said first metal portions by: forming a layer of insulating materials on the substrate; forming said first metal portions with side surfaces on said insulating layer; and, thereafter, ion etching said insulating layer, with the upper surfaces of the first metal portions being coated with resist, so that the resultant sputters of insulating materials are deposited on the side surfaces of the first metal portions.
Claim 7
Dependent Claim
20 words
A method according to claim 5, wherein, prior to the step of ion etching, said first metal portions are undercut.
Claim 8
Dependent Claim
43 words
A method according to claim 1, wherein the photolithographic technique used in said step of processing the pattern forming layer employs an exposing mask, which has a contiguous mask pattern without gaps and has such a configuration that said pattern elements are interconnected.
Claim 9
Dependent Claim
34 words
A method according to claim 1, wherein said substrate is provided with a bubble-supporting magnetic layer and said pattern elements are formed of magnetic materials so as to provide a magnetic bubble propagation pattern.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |