Patent US4463493A successfully refreshed from Google Patents.
US4463493A
Expired / Lapsed
US
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Method for making mask aligned narrow isolation grooves for a semiconductor device
Assignee: Toshiba Corp
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Filing: 1982-09-24
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Granted: 1984-08-07
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Expires: 2002-09-24
Abstract
Abstract A method for making mask aligned narrow isolation grooves for a semiconductor device in which an insulating layer is filled in a groove of the semiconductor substrate to form an island region surrounded by the insulating layer, which comprises the steps of forming a mask pattern on a major surface of the semiconductor substrate in such a manner that its side wall is at a taper angle of 90° or less with respect to a major surface of the semiconductor substrate; ion-implanting an impurity of a conductivity type opposite to that of the semiconductor substrate into the semiconductor substrate using the mask pattern; causing a groove for the insulating material to be formed in the semiconductor substrate around the side wall of the mask pattern; filling the groove with insulating material to form a narrow insulating layer; and diffusing the implanted impurity to form an isolation region surrounded by the insulating material.
Inventors
- 👤 Hiroshi Momose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:09
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10P30/21; H10P30/212; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924; Y10S438/978
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
151 words
A method of making mask aligned narrow isolation grooves for a semiconductor device having an insulating layer filled in the groove of a semiconductor substrate to form an island region surrounded by the insulating layer, the method comprising the steps of: forming a mask pattern on a major surface of the semiconductor substrate in such a manner that side wall of the mask is at a taper angle of 90° or less with respect to the major surface of the semiconductor substrate; ion-implanting an impurity of a conductivity type opposite to that of the semiconductor substrate into the semiconductor substrate using the mask pattern; forming a narrow groove in a portion of said semiconductor substrate adjacent to the side wall of the mask pattern; filling said groove with insulating material to form a narrow insulating layer; and diffusing the implanted impurity to form an island region surrounded by said insulating material.
Claim 2
Independent Claim
151 words
A method of making mask aligned narrow isolation grooves for a semiconductor device having an insulating layer filled in the groove of a semiconductor substrate to form an island region surrounded by the insulating layer, the method comprising the steps of: forming a mask pattern on a major surface of the semiconductor substrate in such a manner that side wall of the mask is at a taper angle of 90° or less with respect to the major surface of the semiconductor substrate; ion-implanting an impurity of a conductivity type opposite to that of the semiconductor substrate into the semiconductor substrate using the mask pattern; forming a narrow groove in a portion of said semiconductor substrate adjacent to the side wall of the mask pattern; filling said groove with insulating material to form a narrow insulating layer; and diffusing the implanted impurity to form an island region surrounded by said insulating material.
Claim 3
Dependent Claim
21 words
A method according to claim 1, wherein said mask pattern is formed on said semiconductor substrate through a first insulating film.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein said mask pattern is formed by anisotropic etching of a polycrystalline silicon film.
Claim 5
Dependent Claim
20 words
A method according to claim 1, wherein said mask pattern is formed by anisotropic etching of a silicon nitride film.
Claim 6
Dependent Claim
32 words
A method according to claim 2, wherein a second insulating film of a thickness smaller than a thickness of said first insulating film is formed on a surface of said mask pattern.
Claim 7
Dependent Claim
57 words
A method according to claim 5, wherein a film is formed on said first and second insulating films, said film is subjected to an anisotropic treatment in a direction perpendicular to said semiconductor substrate, un-treated portions of said first and second insulating films are etched to form an opening, and said groove is formed through said opening.
Claim 8
Dependent Claim
59 words
A method according to claim 5, wherein a film is formed by an anisotropic etching method on said first and second insulating films excluding portions corresponding to said side surfaces of said mask pattern, said first and second films are etched using said film as a mask to form an opening, and said groove is formed through said opening.
Claim 9
Dependent Claim
18 words
A method according to claim 6, wherein said anisotropic treatment comprises ion-implantation of an impurity into said film.
Claim 10
Dependent Claim
14 words
A method according to claim 6, wherein said groove is formed by anisotropic etching.
Claim 11
Dependent Claim
13 words
A method according to claim 8, wherein said film comprises a polycrystalline film.
Claim 12
Dependent Claim
15 words
A method according to claim 7, wherein said film forming method comprises ion beam sputtering.
Claim 13
Dependent Claim
14 words
A method according to claim 7, wherein said groove is formed by anisotropic etching.
Claim 14
Dependent Claim
13 words
A method according to claim 11, wherein said film comprises a polycrystalline film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |