US4462882A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective etching of aluminum
Assignee: Massachusetts Institute of Technology
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Filing: 1983-01-03
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Granted: 1984-07-31
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Expires: 2003-01-03
Abstract
Abstract A process for selectively etching an aluminum-containing coating in preference to a masking material on a surface of the aluminum-containing coating by positioning a patterned masking material on the aluminum-containing coating in a radio frequency plasma etching chamber and introducing an etchant gas and a source of oxygen and silicon to the interior of the chamber under conditions where silicon dioxide is deposited selectively on masking material layer while the unmasked aluminum-containing coating is etched.
Inventors
- 👤 Christopher M. Horwitz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:59
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
108 words
The process for selectively etching an aluminum-containing coating in preference to a masking material on a surface of said aluminum-containing coating which comprises coating a substrate with an aluminum-containing material, positioning a patterned masking material on said aluminum-containing coating, positioning said substrate on a target connected to a radio frequency electrode, introducing an etchant gas composition into said chamber under conditions to convert said etchant gas composition to a plasma, providing a source of oxygen and silicon to the interior of said chamber under conditions to deposit silicon dioxide selectively on said masking material layer and to etch said aluminum-containing coating not covered by said masking layer selectively.
Claim 2
Dependent Claim
108 words
The process for selectively etching an aluminum-containing coating in preference to a masking material on a surface of said aluminum-containing coating which comprises coating a substrate with an aluminum-containing material, positioning a patterned masking material on said aluminum-containing coating, positioning said substrate on a target connected to a radio frequency electrode, introducing an etchant gas composition into said chamber under conditions to convert said etchant gas composition to a plasma, providing a source of oxygen and silicon to the interior of said chamber under conditions to deposit silicon dioxide selectively on said masking material layer and to etch said aluminum-containing coating not covered by said masking layer selectively.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said masking material is a photoresist.
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein said etchant gas is SiF 4 as a source of silicon.
Claim 5
Dependent Claim
20 words
The process of claim 1 wherein the process further comprises providing a source of hydrogen to interior of said chamber.
References Cited (Backward Citations)
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US4373990A
Cited
US4361599A
Cited
US4364793A
Cited
US4370196A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-31 | 1988-01-30 | 1988-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-31 | 1992-01-30 | 1992-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-31 | 1996-01-30 | 1996-07-31 | $7700.00 | Window Closed / Lapsed |