US4303467A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process and gas for treatment of semiconductor devices
Assignee: Branson International Plasma Corp
•
Filing: 1977-11-11
•
Granted: 1981-12-01
•
Expires: 1997-11-11
Abstract
Abstract Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF4 or SiF4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si3N4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.
Inventors
- 👤 Frank Scornavacca
- 👤 Richard L. Bersin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:21
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; C; C23; C23F; C23F4/00; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
58 words
In a process for removing a material from a semiconductor device in a plasma reactor, the steps of: introducing SiF 4 and oxygen gas into the reactor chamber, energizing the SiF 4 and oxygen gas to form a plasma, and exposing the material to the plasma for a time sufficient to remove a predetermined amount of the material.
Claim 2
Dependent Claim
58 words
In a process for removing a material from a semiconductor device in a plasma reactor, the steps of: introducing SiF 4 and oxygen gas into the reactor chamber, energizing the SiF 4 and oxygen gas to form a plasma, and exposing the material to the plasma for a time sufficient to remove a predetermined amount of the material.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein the material to be removed is photoresist and the gas contains on the order of 10 to 50 percent SiF 4 by volume.
Claim 4
Dependent Claim
50 words
In a process for removing a material consisting of or containing silicon from a semiconductor device in a plasma environment, the step of exposing the material to a gaseous plasma containing SiF 4 as a major constituent thereof for a time sufficient to remove a predetermined amount of the material.
Claim 5
Dependent Claim
50 words
In a process for removing a material consisting of or containing silicon from a semiconductor device in a plasma environment, the step of exposing the material to a gaseous plasma containing SiF 4 as a major constituent thereof for a time sufficient to remove a predetermined amount of the material.
Claim 6
Dependent Claim
47 words
In an etching process for selectively removing Si 3 N 4 from a semiconductor device in a plasma environment, the step of exposing the device to a gaseous plasma containing SiF 4 and no oxygen for a time sufficient to remove the Si 3 N 4 .
Claim 7
Dependent Claim
47 words
In an etching process for selectively removing Si 3 N 4 from a semiconductor device in a plasma environment, the step of exposing the device to a gaseous plasma containing SiF 4 and no oxygen for a time sufficient to remove the Si 3 N 4 .
Claim 8
Dependent Claim
47 words
In a process for removing photoresist from a semiconductor structure in a plasma environment, the step of exposing the photoresist to a gaseous plasma formed of a mixture of SiF 4 and at least 20 percent oxygen by volume for a time sufficient to remove the photoresist.
Claim 9
Dependent Claim
47 words
In a process for removing photoresist from a semiconductor structure in a plasma environment, the step of exposing the photoresist to a gaseous plasma formed of a mixture of SiF 4 and at least 20 percent oxygen by volume for a time sufficient to remove the photoresist.
Claim 10
Dependent Claim
26 words
A gas for removing silicon or a silicon containing material from a semiconductor device in a plasma environment, comprising a mixture of SiF 4 and oxygen.
Claim 11
Dependent Claim
26 words
A gas for removing silicon or a silicon containing material from a semiconductor device in a plasma environment, comprising a mixture of SiF 4 and oxygen.
Claim 12
Dependent Claim
20 words
The gas of claim 6 wherein the mixture contains on the order of 2 to 20 percent oxygen by volume.
Claim 13
Dependent Claim
21 words
A gas for removing photoresist from a semiconductor structure in a plasma environment, comprising a mixture of SiF 4 and oxygen.
Claim 14
Dependent Claim
21 words
A gas for removing photoresist from a semiconductor structure in a plasma environment, comprising a mixture of SiF 4 and oxygen.
Claim 15
Dependent Claim
16 words
The gas of claim 8 wherein the mixture contains at least 50 percent oxygen by volume.
Claim 16
Dependent Claim
57 words
A plasm etching process for selectively removing a passivation and diffusion barrier material from a substrate comprising the steps of placing said substrate in a plasma environment, and exposing the substrate to a gas plasma consisting essentially of SiF 4 for a period of time sufficient to remove the desired amount of barrier material from the substrate.
Claim 17
Dependent Claim
57 words
A plasm etching process for selectively removing a passivation and diffusion barrier material from a substrate comprising the steps of placing said substrate in a plasma environment, and exposing the substrate to a gas plasma consisting essentially of SiF 4 for a period of time sufficient to remove the desired amount of barrier material from the substrate.
Claim 18
Dependent Claim
55 words
A plasma etching process for etching a material selected from a silicon containing material, molybedenum and titanium, which process comprises placing the material in a plasma environment and then exposing the material to a gas plasma containing SiF 4 and oxygen for a sufficient period of time to obtain the desired etching of the material.
Claim 19
Dependent Claim
55 words
A plasma etching process for etching a material selected from a silicon containing material, molybedenum and titanium, which process comprises placing the material in a plasma environment and then exposing the material to a gas plasma containing SiF 4 and oxygen for a sufficient period of time to obtain the desired etching of the material.
Claim 20
Dependent Claim
17 words
The process of claim 11 wherein the mixture contains about 2 to about 20% oxygen by volume.
Claim 21
Dependent Claim
52 words
A process for stripping a photoresist material from a semiconductor device which comprises placing said device in a plasma environment and exposing the device to a gas plasma mixture containing oxygen and at least 5% SiF 4 for a sufficient period of time to strip the desired amount of the photoresist material.
Claim 22
Dependent Claim
52 words
A process for stripping a photoresist material from a semiconductor device which comprises placing said device in a plasma environment and exposing the device to a gas plasma mixture containing oxygen and at least 5% SiF 4 for a sufficient period of time to strip the desired amount of the photoresist material.
Claim 23
Dependent Claim
23 words
A composition useful as a gas plasma in a plasma etching process which consists of a mixture comprised of SiF 4 and oxygen.
Claim 24
Dependent Claim
23 words
A composition useful as a gas plasma in a plasma etching process which consists of a mixture comprised of SiF 4 and oxygen.
Claim 25
Dependent Claim
17 words
The composition of claim 14 wherein the mixture contains about 2 to about 20% oxygen by volume.
Claim 26
Dependent Claim
15 words
The composition of claim 14 wherein the mixture contains at least 5% SiF 4 volume.
Claim 27
Dependent Claim
18 words
A gas mixture useful in a plasma etching process, which mixture consists essentially of SiF 4 and oxygen.
Claim 28
Dependent Claim
18 words
A gas mixture useful in a plasma etching process, which mixture consists essentially of SiF 4 and oxygen.
References Cited (Backward Citations)
US4026742A
Cited
US4213818A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-30 | 1985-06-01 | 1985-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-30 | 1989-06-01 | 1989-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-30 | 1993-06-01 | 1993-12-01 | $7700.00 | Window Closed / Lapsed |