Patent US4461671A successfully refreshed from Google Patents.
US4461671A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the manufacture of semiconductor wafers
Assignee: HELIOTRONIC FORSCHUNGS-UND ENTWICKLUNGS GESELLSCHAFT fur SOLARZELLEN-GRUNDSOFFE MBH
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Filing: 1982-02-01
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Granted: 1984-07-24
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Expires: 2002-02-01
Abstract
Abstract The invention relates to a process for the direct manufacture of semiconductor wafers, wherein the semiconductor wafers are obtained from molten semiconductor material by providing an area of the surface of the semiconductor melt that corresponds approximately to the size of the wafer with at least one seed crystal, by allowing this area of the surface to cool until it solidifies, the cooling being brought about at least substantially by loss of heat by radiation, and finally, by removing the crystallized-out wafer from the surface. If elemental silicon is used as the semiconductor material, wafers that are suitable for further processing to form solar cells are obtained.
Inventors
- 👤 Dieter Seifert
- 👤 Erhard Sirtl
- 👤 Cord Gessert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:36
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/14; C30B29/00; C30B29/60; Y; Y10; Y10S; Y10S117/00; Y10S117/911
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
A process for the manufacture of semiconductor wafers directly from molten semiconductor material, comprising the steps of: (a) producing a bath of molten semiconductor material having a melt surface; (b) seeding an area of the melt surface corresponding approximately to the size of the desired wafer by allowing at least one seed crystal to fall freely onto said melt surface; (c) allowing the area of the melt surface corresponding approximately to the size of the desired wafer to cool until it solidifies and floats freely on the melt surface, the cooling being brought about at least substantially by loss of heat by radiation; and (d) removing the freely floating wafer from the melt surface.
Claim 2
Dependent Claim
114 words
A process for the manufacture of semiconductor wafers directly from molten semiconductor material, comprising the steps of: (a) producing a bath of molten semiconductor material having a melt surface; (b) seeding an area of the melt surface corresponding approximately to the size of the desired wafer by allowing at least one seed crystal to fall freely onto said melt surface; (c) allowing the area of the melt surface corresponding approximately to the size of the desired wafer to cool until it solidifies and floats freely on the melt surface, the cooling being brought about at least substantially by loss of heat by radiation; and (d) removing the freely floating wafer from the melt surface.
Claim 3
Dependent Claim
25 words
The process according to claim 1, wherein the number of seed crystals is from 1 to 500, per 1 cm 2 of the melt surface.
Claim 4
Dependent Claim
23 words
The process according to claim 2, wherein said number of seed crystals is from 10 to 100 per cm 2 of melt surface.
Claim 5
Dependent Claim
18 words
The process according to claim 1, 2 or 3, wherein elemental silicon is used as the semiconductor material.
Claim 6
Dependent Claim
18 words
The process according to claim 1, wherein said wafer to be crystallized out grows onto a crystallization former.
Claim 7
Dependent Claim
24 words
The process according to claim 4, wherein wafer-shaped crystals, the basal and upper faces of which form the 1,1,1-planes, are used as seed crystals.
Claim 8
Dependent Claim
62 words
The process according to claim 1, wherein step (b) comprises collecting a multiplicity of seed crystals in a sieve having a removable base, arranging said sieve over the melt surface, and removing the base of said sieve so as to allow the seed crystals to fall individually onto the melt surface in a geometrical arrangement determined by the configuration of the sieve.
Claim 9
Dependent Claim
118 words
The process of claim 1 wherein said step (c) is performed by bringing removable cooling means disposed within hollow wafer withdrawal means to a position adjacent to the area of the melt surface to be solidified to effect cooling and solidification thereof in the form of a wafer and thereafter removing said cooling means to a position removed from said melt surface and wherein said step (d) is performed by contacting said melt surface with said hollow wafer withdrawal means so that the wafer formed is secured to said withdrawal means solely at the edges thereof and withdrawing said withdrawl means to a position removed from said melt surface whereat said wafer is detached from said withdrawal means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-24 | 1988-01-23 | 1988-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-24 | 1992-01-23 | 1992-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-24 | 1996-01-23 | 1996-07-24 | $7700.00 | Window Closed / Lapsed |