Method of patterning device regions by oxidizing patterned aluminum layer

Claim 1

A method of manufacturing a MOS FET comprising the steps of: forming a gate oxide film and an isolation oxide region on a silicon substrate of one conductivity type; forming a polycrystalline silicon layer on said gate oxide film and said element isolation oxide region; forming an Al layer on said polycrystalline silicon layer; forming a resist pattern of a predetermined shape on said Al layer; selectively etching off said Al layer by using said resist pattern as a mask; oxidizing the remaining Al layer in warm water; removing said resist pattern and remaining Al layer by a dry etching technique utilizing CCl 4 thus forming a narrow pattern; etching off exposed polycrystalline silicon layer by using said narrow Al 2 O 3 pattern as a mask thus forming a structure comprising said gate oxide film, said isolation oxide region, a narrow polycrystalline silicon region thereon, and a narrow Al 2 O 3 pattern; dipping said structure in an acid solution to remove said narrow Al 2 O 3 pattern; and implanting an impurity of the other conductivity type into said substrate to form closely adjacent source region and drain region by using said narrow polycrystalline silicon region as a mask.

Claim 2

A method of manufacturing a MOS FET comprising the steps of: forming a gate oxide film and an isolation oxide region on a silicon substrate of one conductivity type; forming a polycrystalline silicon layer on said gate oxide film and said element isolation oxide region; forming an Al layer on said polycrystalline silicon layer; forming a resist pattern of a predetermined shape on said Al layer; selectively etching off said Al layer by using said resist pattern as a mask; oxidizing the remaining Al layer in warm water; removing said resist pattern and remaining Al layer by a dry etching technique utilizing CCl 4 thus forming a narrow pattern; etching off exposed polycrystalline silicon layer by using said narrow Al 2 O 3 pattern as a mask thus forming a structure comprising said gate oxide film, said isolation oxide region, a narrow polycrystalline silicon region thereon, and a narrow Al 2 O 3 pattern; dipping said structure in an acid solution to remove said narrow Al 2 O 3 pattern; and implanting an impurity of the other conductivity type into said substrate to form closely adjacent source region and drain region by using said narrow polycrystalline silicon region as a mask.

Claim 3

A method of forming a pattern comprising the steps of: forming an oxidizable region of a predetermined pattern in a substrate, oxidizing the sidewalls of said oxidizable region and forming an oxidized region surrounding said oxidizable region, forming an oxide layer from said oxidized region, removing said oxidizable region, said oxide layer having a thickness in the range of 0.5 to 0.01 micron, said oxidizable region is made of Al and said oxide region is made of Al 2 O 3 , said oxidizable region of the predetermined pattern formed on said substrate is formed by the steps of forming said oxidizable layer on said substrate, forming a resist layer on said oxidizable layer, shaping said resist layer into a resist region of a predetermined pattern, and etching said oxidizable layer by using said resist region as a mask to shape said oxidizable region to have a predetermined pattern.

Claim 4

A method of forming a pattern comprising the steps of: forming an oxidizable region of a predetermined pattern in a substrate, oxidizing the sidewalls of said oxidizable region and forming an oxidized region surrounding said oxidizable region, forming an oxide layer from said oxidized region, removing said oxidizable region, said oxide layer having a thickness in the range of 0.5 to 0.01 micron, said oxidizable region is made of Al and said oxide region is made of Al 2 O 3 , said oxidizable region of the predetermined pattern formed on said substrate is formed by the steps of forming said oxidizable layer on said substrate, forming a resist layer on said oxidizable layer, shaping said resist layer into a resist region of a predetermined pattern, and etching said oxidizable layer by using said resist region as a mask to shape said oxidizable region to have a predetermined pattern.

Claim 11

A method of patterning device regions by oxidizing patterned aluminum layer comprising the steps of: forming an Al layer on a substrate, forming a first resist layer on said Al layer, shaping said first resist layer into a first resist region of a rectangular figure, etching said Al layer into a rectangular Al region by using said first resist region as a mask, forming a second resist layer on said first resist region and said rectangular Al region, shaping said second resist layer into a second resist region which covers a portion of the sidewall of said rectangular Al region, oxidizing the exposed sidewall of said rectangular Al region into an Al 2 O 3 pattern by immersing said substrate including said rectangular Al region in warm water, removing said first and second resist regions, removing remaining Al region by dry etching technique utilizing CCl 4 .

Claim 12

A method of patterning device regions by oxidizing patterned aluminum layer comprising the steps of: forming an Al layer on a substrate, forming a first resist layer on said Al layer, shaping said first resist layer into a first resist region of a rectangular figure, etching said Al layer into a rectangular Al region by using said first resist region as a mask, forming a second resist layer on said first resist region and said rectangular Al region, shaping said second resist layer into a second resist region which covers a portion of the sidewall of said rectangular Al region, oxidizing the exposed sidewall of said rectangular Al region into an Al 2 O 3 pattern by immersing said substrate including said rectangular Al region in warm water, removing said first and second resist regions, removing remaining Al region by dry etching technique utilizing CCl 4 .