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US4457803A
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Processing method using a focused ion beam
Assignee: Toshiba Corp
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Filing: 1982-12-08
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Granted: 1984-07-03
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Expires: 2002-12-08
Abstract
Abstract A processing method using a focused ion beam is proposed which uses a focused ion beam radiation apparatus. When a specimen is irradiated with the focused ion beam in order to be etched, the desired etching depth of the specimen is preset as a function of a location. The ion dose of the focused ion beam, the acceleration voltage, or the etching time may be varied in accordance with the preset data.
Inventors
- 👤 Tadahiro Takigawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:20
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/302; H01J37/305; H01J37/3053; H01J37/3056; H10; H10P; H10P50/00; H10P50/20; H01J2237/00; H01J2237/06; H01J2237/08; H01J2237/0802; H01J2237/0807; H01J2237/30; H01J2237/317; H01J2237/31749; Y; Y10; Y10S; Y10S438/00; Y10S438/961
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
123 words
A processing method using a focused ion beam, which uses a focused ion beam radiation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam, a deflecting device for scanning the ion beam on a surface of a wafer, a blanking device for blanking the ion beam, and a control device for controlling said devices, thereby etching the wafer by irradiation thereof with the focused ion beam, comprising the steps of: determining a desired etching depth of the wafer as a function of a location and presetting data of the etching depth in said control device; and controlling said blanking device in accordance with said data so as to vary a radiation time of the ion beam.
Claim 2
Dependent Claim
123 words
A processing method using a focused ion beam, which uses a focused ion beam radiation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam, a deflecting device for scanning the ion beam on a surface of a wafer, a blanking device for blanking the ion beam, and a control device for controlling said devices, thereby etching the wafer by irradiation thereof with the focused ion beam, comprising the steps of: determining a desired etching depth of the wafer as a function of a location and presetting data of the etching depth in said control device; and controlling said blanking device in accordance with said data so as to vary a radiation time of the ion beam.
Claim 3
Dependent Claim
23 words
A method according to claim 1 further comprising the step of detecting the completion of etching of the wafer with the ion beam.
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein the ion beam radiation time is varied by changing a pulse width of a blanking signal from said blanking device.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein the ion beam is scanned in a stepped form.
References Cited (Backward Citations)
US3563809A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-07-03 | 1988-01-02 | 1988-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-07-03 | 1992-01-02 | 1992-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-07-03 | 1996-01-02 | 1996-07-03 | $7700.00 | Window Closed / Lapsed |