Patent US4455565A successfully refreshed from Google Patents.
US4455565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode
Assignee: Fairchild Semiconductor Corp
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Filing: 1981-02-13
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Granted: 1984-06-19
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Expires: 2001-02-13
Abstract
Abstract A vertical MOSFET includes source and gate electrodes on a major semiconductor surface, and a drain electrode on an opposing semiconductor surface. A shield electrode is disposed in proximity to the gate electrode so as to minimize feedback capacitance between the gate electrode and drain region. Additionally, the shield electrode increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device.
Inventors
- 👤 Alvin M. Goodman
- 👤 Ramon U. Martinelli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D64/00; H10D64/111; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
158 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a body region of second conductivity type extending into the substrate from the first surface and being bounded by the extended drain portion; a source region of first conductivity type extending into the substrate from the first surface within the boundaries of the body region; a channel portion, defined at the first surface by the source region and the extended drain portion; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; an insulated gate electrode disposed on the first surface over the channel portion and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
Claim 2
Dependent Claim
158 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a body region of second conductivity type extending into the substrate from the first surface and being bounded by the extended drain portion; a source region of first conductivity type extending into the substrate from the first surface within the boundaries of the body region; a channel portion, defined at the first surface by the source region and the extended drain portion; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; an insulated gate electrode disposed on the first surface over the channel portion and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
Claim 3
Dependent Claim
22 words
The device of claim 1 wherein: the drain region includes a substantially planar portion of relatively high conductivity at the second surface.
Claim 4
Dependent Claim
171 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a pair of body regions of second conductivity type extending into the substrate from the first surface, the body regions being spaced apart by the extended drain portion; a pair of source regions, each extending into the substrate from the first surface within the boundaries of a body region; a pair of channel portions, defined at the first surface by the pair of source regions and the extended drain portion therebetween; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; a pair of insulated gate electrodes disposed on the first surface over the pair of channel portions and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
Claim 5
Dependent Claim
171 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a pair of body regions of second conductivity type extending into the substrate from the first surface, the body regions being spaced apart by the extended drain portion; a pair of source regions, each extending into the substrate from the first surface within the boundaries of a body region; a pair of channel portions, defined at the first surface by the pair of source regions and the extended drain portion therebetween; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; a pair of insulated gate electrodes disposed on the first surface over the pair of channel portions and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
Claim 6
Dependent Claim
27 words
The device of claim 3 further comprising: an oxide layer underlying the gate and shield electrodes; and a pair of source electrodes disposed on the first surface.
Claim 7
Dependent Claim
169 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a pair of body regions of second conductivity type extending into the substrate from the first surface, the body regions being spaced apart by the extended drain portion; a pair of source regions, each extending into the substrate from the first surface within the boundaries of a body region; a pair of channel portions, defined at the first surface by the pair of source regions and the extended drain portion therebetween; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; an insulated gate electrode disposed on the first surface over the pair of channel portions and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
Claim 8
Dependent Claim
169 words
A vertical MOSFET device, comprising: a semiconductor substrate having first and second opposing major surfaces; a drain region of first conductivity type disposed across the second surface and including an extended drain portion extending to the first surface; a pair of body regions of second conductivity type extending into the substrate from the first surface, the body regions being spaced apart by the extended drain portion; a pair of source regions, each extending into the substrate from the first surface within the boundaries of a body region; a pair of channel portions, defined at the first surface by the pair of source regions and the extended drain portion therebetween; a source electrode contacting the source and body regions on the first surface; a drain electrode contacting the drain region on the second surface; an insulated gate electrode disposed on the first surface over the pair of channel portions and spaced from said extended drain portion; and a shield electrode overlying only said extended drain portion on the first surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-19 | 1987-12-19 | 1988-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-19 | 1991-12-19 | 1992-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-19 | 1995-12-19 | 1996-06-19 | $7700.00 | Window Closed / Lapsed |