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US4454221A Expired / Lapsed US ⏱️ 0.0 years remaining

Anisotropic wet etching of chalcogenide glass resists

Assignee: Nokia Bell Labs
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Filing: 1982-04-08
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Granted: 1984-06-12
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Expires: 2002-04-08
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Abstract

Abstract A method for enhancing linewidth control during the patterning of a substrate with a resist is disclosed. Resists used in the invention have chemically separated structures characterized by two types of regions of different chemical composition, which different types of regions are interspersed among each other. Because the resists used in the present invention have chemically separated structures, anisotropic wet development of these resists is achievable with an appropriate bicomponent wet developer. Consequently, after exposure, the image formed in a thin, upper layer of the resist is transferred with vertical walls through the thickness of the resist.

Inventors

  • 👤 Cheng-Hsuan Chen
  • 👤 Edith C. Ong
  • 👤 James C. Phillips
  • 👤 King L. Tai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 01:37
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0042; G03F7/0043; H; H10; H10P; H10P95/00; G03F7/26; G03F7/30; G03F7/32; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283

Claims Analysis

Total Claims: 33
Claim 1
Independent Claim 151 words
A method for fabricating an article which includes a surface, comprising the steps of: exposing selected portions of a resist, on said surface, to energy; and treating said resist with a wet developing agent to remove nonexposed portions of said resist, characterized in that the nonexposed portions of said resist removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of the resist, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 2
Independent Claim 151 words
A method for fabricating an article which includes a surface, comprising the steps of: exposing selected portions of a resist, on said surface, to energy; and treating said resist with a wet developing agent to remove nonexposed portions of said resist, characterized in that the nonexposed portions of said resist removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of the resist, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 3
Dependent Claim 12 words
The method of claim 1 wherein said resist includes a chalcogenide glass.
Claim 4
Dependent Claim 45 words
The method of claim 2 wherein said chalcogenide glass is a germanium-selenium glass having a nominal composition Ge x Se 1-x where 0.1<x<0.2, and wherein the regions having said first chemical composition include GeSe 2 and the regions having said second chemical composition include Se.
Claim 5
Dependent Claim 7 words
The method of claim 3 wherein 0.13<x<0.17.
Claim 6
Dependent Claim 14 words
The method of claim 3 wherein said first chemical component includes a hydroxide compound.
Claim 7
Dependent Claim 14 words
The method of claim 5 wherein said hydroxide compound is tetra methyl ammonium hydroxide.
Claim 8
Dependent Claim 12 words
The method of claim 5 wherein said hydroxide compound is sodium hydroxide.
Claim 9
Dependent Claim 12 words
The method of claim 5 wherein said hydroxide compound is potassium hydroxide.
Claim 10
Dependent Claim 14 words
The method of claim 3 wherein said second chemical component includes a sulfide compound.
Claim 11
Dependent Claim 12 words
The method of claim 9 wherein said sulfide compound is sodium sulfide.
Claim 12
Dependent Claim 14 words
The method of claim 3 wherein said second chemical component includes a borohydride compound.
Claim 13
Dependent Claim 12 words
The method of claim 11 wherein said borohydride compound is sodium borohydride.
Claim 14
Dependent Claim 23 words
The method of claim 3 wherein said energy includes UV light having a wavelength ranging from about 2000 Angstroms to about 4500 Angstroms.
Claim 15
Dependent Claim 21 words
The method of claim 3 wherein said energy includes electrons having energies ranging from about 1 kev to about 3 kev.
Claim 16
Dependent Claim 21 words
The method of claim 2 wherein said energy includes ions having energies ranging from about 10 kev to about 30 kev.
Claim 17
Dependent Claim 18 words
The method of claim 1 wherein there is a polymeric layer between said resist and said article surface.
Claim 18
Dependent Claim 49 words
The method of claim 16 further comprising the step of processing said polymeric layer to produce a replica pattern by exposing the article product resulting from the fabrication method of claim 1 to an agent which selectively attacks portions of said polymeric layer bared during patterning of said resist.
Claim 19
Dependent Claim 21 words
The method of claim 17 wherein said replica pattern in said polymeric layer is produced by O 2 reactive ion etching.
Claim 20
Dependent Claim 19 words
The method of claim 17 wherein there is a metal layer beneath said polymeric layer on said article surface.
Claim 21
Dependent Claim 45 words
The method of claim 19 further comprising the step of patterning said metal layer by exposing the article product resulting from the fabrication method of claim 17 to an agent which selectively attacks portions of said metal layer bared during patterning of said polymeric layer.
Claim 22
Dependent Claim 15 words
The method of claim 20 wherein said metal layer is patterned by chlorine plasma etching.
Claim 23
Dependent Claim 15 words
The method of claim 20 wherein said metal layer is patterned by fluorine plasma etching.
Claim 24
Dependent Claim 51 words
The method of claim 16 further comprising the step of processing said polymeric layer to produce an undercut replica pattern by exposing the article product resulting from the fabrication method of claim 1 to an agent which isotropically attacks portions of said polymeric layer bared during patterning of said processing layer.
Claim 25
Dependent Claim 24 words
The method of claim 23 further comprising the step of depositing metal onto the article product resulting from the fabrication method of claim 23.
Claim 26
Independent Claim 225 words
A method for fabricating an article which includes a surface, comprising the steps of: depositing a resist onto said surface, which resist includes a chalcogenide glass supporting a silver compound-containing material; exposing selected portions of said chalcogenide glass to energy so as to induce silver migration from said silver compound-containing material into the exposed portions of said chalocogenide glass, thereby defining a pattern of silver-doped chalcogenide glass of reduced solubility in a wet developing agent; stripping silver compound-containing material unaffected by said energy from the surface of said chalcogenide glass; treating said chalcogenide glass with said wet developing agent to selectively remove nonexposed portions of said chalcogenide glass to produce a patterned resist characterized in that the nonexposed portions of said chalcogenide glass removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of said chalcogenide glass, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 27
Independent Claim 225 words
A method for fabricating an article which includes a surface, comprising the steps of: depositing a resist onto said surface, which resist includes a chalcogenide glass supporting a silver compound-containing material; exposing selected portions of said chalcogenide glass to energy so as to induce silver migration from said silver compound-containing material into the exposed portions of said chalocogenide glass, thereby defining a pattern of silver-doped chalcogenide glass of reduced solubility in a wet developing agent; stripping silver compound-containing material unaffected by said energy from the surface of said chalcogenide glass; treating said chalcogenide glass with said wet developing agent to selectively remove nonexposed portions of said chalcogenide glass to produce a patterned resist characterized in that the nonexposed portions of said chalcogenide glass removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of said chalcogenide glass, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 28
Independent Claim 189 words
A method for fabricating an article which includes a surface, comprising the steps of: depositing a resist on said surface, which resist includes a chalcogenide glass supporting a sacrificial layer; defining a pattern in said sacrificial layer by removing selected portions of said sacrificial layer; replicating said pattern in said chalcogenide glass by treating said wet chalcogenide glass with a developing agent which selectively removes the portions of said chalcogenide glass not covered by said patterned sacrificial layer, characterized in that the portions of said chalcogenide glass removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of said chalcogenide glass; and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 29
Independent Claim 189 words
A method for fabricating an article which includes a surface, comprising the steps of: depositing a resist on said surface, which resist includes a chalcogenide glass supporting a sacrificial layer; defining a pattern in said sacrificial layer by removing selected portions of said sacrificial layer; replicating said pattern in said chalcogenide glass by treating said wet chalcogenide glass with a developing agent which selectively removes the portions of said chalcogenide glass not covered by said patterned sacrificial layer, characterized in that the portions of said chalcogenide glass removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of the regions having said second chemical composition being less than the thickness of said chalcogenide glass; and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 30
Dependent Claim 47 words
The method of claim 25 or 26 wherein said chalcogenide glass is a germanium-selenium glass having a nominal composition Ge x Se 1-x where 0.1<x<0.2, and wherein the regions having said first chemical composition include GeSe 2 and the regions having said second chemical composition include Se.
Claim 31
Dependent Claim 7 words
The method of claim 27 wherein 0.13≦x≦0.17.
Claim 32
Dependent Claim 150 words
A product including a surface formed by the process comprising the steps of: exposing selected portions of a resist, on said surface, to energy; and treating said resist with a wet developing agent to remove nonexposed portions of said resist, characterized in that the nonexposed portions of said resist removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of said regions having said second chemical composition being less than the thickness of said resist, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.
Claim 33
Dependent Claim 150 words
A product including a surface formed by the process comprising the steps of: exposing selected portions of a resist, on said surface, to energy; and treating said resist with a wet developing agent to remove nonexposed portions of said resist, characterized in that the nonexposed portions of said resist removed by said wet developing agent include regions having a first chemical composition and regions having a second chemical composition, the regions having said first chemical composition being interspersed among the regions having said second chemical composition, and a lateral dimension of said regions having said second chemical composition being less than the thickness of said resist, and said wet developing agent includes first and second chemical components, said first chemical component preferentially etching the regions having said first chemical composition, and the etching rate of said first chemical component being greater than the etching rate of said second chemical component.

References Cited (Backward Citations)

US4127414A Cited
US4320191A Cited
US4276368A Cited
US4405710A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-06-12 1987-12-12 1988-06-12 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-06-12 1991-12-12 1992-06-12 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-06-12 1995-12-12 1996-06-12 $7700.00 Window Closed / Lapsed

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