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US4452646A
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Method of making planar III-V compound device by ion implantation
Assignee: McDonnell Douglas Corp
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Filing: 1983-02-07
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Granted: 1984-06-05
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Expires: 2003-02-07
Abstract
Abstract A planar process and new structure which leads to large scale integration capability by utilizing selective ion implantation into semi-insulating Gallium Arsenide substrates or any other compound semi-conducting material to yield isolated depletion enhancement mode JFETS and MESFETS, p-n junction and Schottky diodes, resistors and hot electron current limiters. The planar structure provides relatively simple integrated circuit fabrication which results in an increase of circuit device reliability and thereby improves not only the ease of fabrication but thereby increases yield of enhancement mode JFETS and MESFETS and other like devices in integrated circuit fabrication. In addition improved device structure is possible which increases device speed.
Inventors
- 👤 Rainer R. Zuleeg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:01
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10D; H10D30/00; H10D30/80; H10D30/83; H10D8/00; H10D8/01; H10D8/051; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10P30/202; H10P30/206; H10P30/28; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
234 words
A process for fabricating a planar III-V compound semiconductor device comprising: a. forming a first mask on a surface of the semiconductor material to expose selected first areas of the material; b. implanting first ions selected from the group consisting of selenium and other N-type donor ions into the first areas by ion implantation at sufficient accelerating energies and concentrations to form N+ regions in the GaAs material beneath the first areas wherein the implantation comprises at least two separate implantations such that the resulting concentration of the first ions in the material decreases with increasing depth beneath the surface of the material; c. removing a portion of the first mask to expose the surface of the material between at least two adjacent implanted first areas; d. implanting further first ions in the exposed channel region of step (c) and in the first areas such that the resulting ion concentration in the channel region is lower than the ion concentration in the adjacent first areas and at a shallower depth than the implanted ion regions in the adjacent first areas, such that the temperature of the semiconductor material during the ion implantation steps (b) and (d) is held at a temperature of approximately 300° C.; e. annealing the material; and f. forming suitable electrical contacts on at least a portion of at least two adjacent first areas now connected by the implanted channel region.
Claim 2
Dependent Claim
234 words
A process for fabricating a planar III-V compound semiconductor device comprising: a. forming a first mask on a surface of the semiconductor material to expose selected first areas of the material; b. implanting first ions selected from the group consisting of selenium and other N-type donor ions into the first areas by ion implantation at sufficient accelerating energies and concentrations to form N+ regions in the GaAs material beneath the first areas wherein the implantation comprises at least two separate implantations such that the resulting concentration of the first ions in the material decreases with increasing depth beneath the surface of the material; c. removing a portion of the first mask to expose the surface of the material between at least two adjacent implanted first areas; d. implanting further first ions in the exposed channel region of step (c) and in the first areas such that the resulting ion concentration in the channel region is lower than the ion concentration in the adjacent first areas and at a shallower depth than the implanted ion regions in the adjacent first areas, such that the temperature of the semiconductor material during the ion implantation steps (b) and (d) is held at a temperature of approximately 300° C.; e. annealing the material; and f. forming suitable electrical contacts on at least a portion of at least two adjacent first areas now connected by the implanted channel region.
Claim 3
Dependent Claim
99 words
The process of claim 1 further comprising: a. after the annealing step but before the electrical contact formation step, forming a second mask over the material such that a portion of at least the channel region is exposed in at least one area; b. introducing second ions selected from the group consisting of zinc and other p-type acceptor ions into the portions exposed by the second mask to a predetermined depth in the material such that at least one gate region is formed in the material; and c. forming an electrical contact to the at least one gate region.
Claim 4
Dependent Claim
18 words
The process of claim 2 wherein the step whereby second ions are introduced is an ion implantation step.
Claim 5
Dependent Claim
17 words
The process of claim 3 wherein the step whereby second ions are introduced is a diffusion step.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein the III-V compound comprises Ga and As.
Claim 7
Dependent Claim
13 words
The process of claim 2 wherein the III-V compound comprises Ga and As.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-05 | 1987-12-05 | 1988-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-05 | 1991-12-05 | 1992-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-05 | 1995-12-05 | 1996-06-05 | $7700.00 | Window Closed / Lapsed |