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US4452645A
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Method of making emitter regions by implantation through a non-monocrystalline layer
Assignee: International Business Machines Corp
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Filing: 1981-03-12
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Granted: 1984-06-05
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Expires: 2001-03-12
Abstract
Abstract A transistor structure is provided with an emitter which is formed from non-monocrystalline silicon which is caused to be converted to monocrystalline silicon during the manufacture of the transistor. In the process of manufacturing the present semiconductor structure, a subcollector is formed in a semiconductor substrate. The subcollector dopant out diffuses into a subsequently deposited epitaxial layer. A base region is formed in the epitaxial layer of a conductivity type opposite that of the conductivity type of the subcollector. This results in a PN junction between the base region and the out diffused subcollector impurities forming the collector of the transistor. A layer of non-monocrystalline silicon is deposited on the epitaxial layer. At least a portion of the non-monocrystalline silicon forms a precursor for an emitter region which is contiguous to but vertically displaced from the surface of the base region. The emitter precursor is then bombarded with ions of a conductivity type that is the same as the conductivity type of the subcollector. The ion bombardment is at a dose and energy level sufficient to displace a portion of the Gaussian distribution of the ions across the interface between the non-monocrystalline layer and the epitaxial layer and into the base region. Thereafter, the structure is annealed by suitable means to drive a portion of the ions deeper into the base region and to convert the non-monocrystalline silicon of the emitter precursor into a monocrystalline emitter region.
Inventors
- 👤 Wei-Kan Chu
- 👤 Ingrid E. Magdo
- 👤 Hans S. Rupprecht
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 11:47
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/133; H10P; H10P30/00; H10P30/20; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/039; Y10S148/047; Y10S148/117; Y10S148/124
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
168 words
A method for forming an emitter region of a transistor comprising: forming a subcollector region in a semiconductor substrate, depositing an epitaxial layer on said semiconductor substrate, forming a base region in said epitaxial layer of a conductivity type opposite that of the conductivity type of said subcollector, depositing a layer of non-monocrystalline silicon on said epitaxial layer, at least a portion of said non-monocrystalline silicon forming a precursor for an emitter region which is adjacent to and at least partially vertically displaced from said base region, bombarding said emitter precursor with ions of a conductivity type that is the same as the conductivity type of said subcollector at a dosage and energy sufficient to displace at least a portion of the Gaussian distribution of said ions across the interface between said non-monocrystalline layer and said epitaxial layer, and annealing the structure so as to drive said ions into said base region and to convert said non-monocrystalline silicon of said emitter precursor into a monocrystalline silicon emitter region.
Claim 2
Independent Claim
168 words
A method for forming an emitter region of a transistor comprising: forming a subcollector region in a semiconductor substrate, depositing an epitaxial layer on said semiconductor substrate, forming a base region in said epitaxial layer of a conductivity type opposite that of the conductivity type of said subcollector, depositing a layer of non-monocrystalline silicon on said epitaxial layer, at least a portion of said non-monocrystalline silicon forming a precursor for an emitter region which is adjacent to and at least partially vertically displaced from said base region, bombarding said emitter precursor with ions of a conductivity type that is the same as the conductivity type of said subcollector at a dosage and energy sufficient to displace at least a portion of the Gaussian distribution of said ions across the interface between said non-monocrystalline layer and said epitaxial layer, and annealing the structure so as to drive said ions into said base region and to convert said non-monocrystalline silicon of said emitter precursor into a monocrystalline silicon emitter region.
Claim 3
Dependent Claim
18 words
A method in accordance with claim 1 wherein said subcollector region and said emitter region have N-type conductivity.
Claim 4
Dependent Claim
18 words
A method in accordance with claim 1 wherein said subcollector region and said emitter region have P-type conductivity.
Claim 5
Dependent Claim
23 words
A method in accordance with claim 1 wherein said non-monocrystalline silicon layer has a depth of from about 500 to about 1500 Å.
Claim 6
Independent Claim
26 words
A method in accordance with any of claims 2-4 wherein said emitter precursor is bombarded with a combination of a doping ion and a neutral ion.
Claim 7
Dependent Claim
39 words
A method in accordance with claim 5 wherein said annealing is effected by heating the structure to a temperature and for a time sufficient to convert said non-monocrystalline silicon of said emitter precursor into a monocrystalline silicon emitter region.
Claim 8
Dependent Claim
35 words
A method in accordance with claim 6 wherein said heating is to a temperature of from about 800° C. to about 1000° C. for a period of from about 30 minutes to about 4 hours.
Claim 9
Independent Claim
139 words
A method for fabricating an improved shallow emitter transistor structure wherein contact metal penetration of the emitter-base junction is eliminated comprising depositing a layer of non-monocrystalline silicon on a layer of monocrystalline silicon, bombarding said non-monocrystalline silicone in at least one region which is to be metallized with a doping ion at a dosage and energy sufficient to displace at least a portion of the Gaussian distribution of said ions across the interface between said non-monocrystalline layer and monocrystalline layer, annealing said transistor structure to convert said non-monocrystalline silicon in said metallization region to monocrystalline silicon, etching said non-monocrystalline silicon layer to remove said non-monocrystalline layer in those regions which are not to be metallized and applying metallization to said at least one region which remains after said etching whereby said metallization is spatially separated from said monocrystalline layer.
Claim 10
Independent Claim
139 words
A method for fabricating an improved shallow emitter transistor structure wherein contact metal penetration of the emitter-base junction is eliminated comprising depositing a layer of non-monocrystalline silicon on a layer of monocrystalline silicon, bombarding said non-monocrystalline silicone in at least one region which is to be metallized with a doping ion at a dosage and energy sufficient to displace at least a portion of the Gaussian distribution of said ions across the interface between said non-monocrystalline layer and monocrystalline layer, annealing said transistor structure to convert said non-monocrystalline silicon in said metallization region to monocrystalline silicon, etching said non-monocrystalline silicon layer to remove said non-monocrystalline layer in those regions which are not to be metallized and applying metallization to said at least one region which remains after said etching whereby said metallization is spatially separated from said monocrystalline layer.
Claim 11
Dependent Claim
24 words
A method in accordance with claim 8 wherein said non-monocrystalline layer is bombarded with a combination of a doping ion and a neutral ion.
Claim 12
Dependent Claim
32 words
A method in accordance with claim 9 wherein said annealing is effected by heating the structure to a temperature and for a time sufficient to convert said non-monocrystalline silicon to monocrystalline silicon.
Claim 13
Dependent Claim
35 words
A method in accordance with claim 10 wherein said heating is to a temperature of from about 800° C. to about 1000° C. for a period of from about 30 minutes to about 4 hours.
References Cited (Backward Citations)
US4109273A
Cited
US4063967A
Cited
US4125426A
Cited
US4151006A
Cited
US4216030A
Cited
US4190466A
Cited
US4313255A
Cited
US4243435A
Cited
US4234357A
Cited
US4389255A
Cited
US4301588A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-05 | 1987-12-05 | 1988-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-05 | 1991-12-05 | 1992-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-05 | 1995-12-05 | 1996-06-05 | $7700.00 | Window Closed / Lapsed |