US4389255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off
Assignee: Micron Technology Inc
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Filing: 1980-11-13
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Granted: 1983-06-21
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Expires: 2000-11-13
Abstract
Abstract In the process of manufacturing integrated circuits, the steps of forming a layer of polysilicon, in which a dopant will be implanted, over an oxide mask having suitable windows to define zones of one conductivity type to be formed in a substrate of another conductivity type, driving the dopant from the polysilicon layer into the substrate to form the zones in the substrate, oxidizing the polysilicon layer so that the oxidized polysilicon layer and the mask become an integral layer, and then removing the integrated oxide layer. Thereafter, other layers may be formed on the substrate.
Inventors
- 👤 Chau-Shiong Chen
- 👤 Anant O. Dixit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:54
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1408; H10P32/1414; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
176 words
A process for producing a buried collector for a bipolar transistor in a semiconductor body comprising: applying a dopant impermeable oxide masking layer onto the surface of said semiconductor body, said masking layer having a window therein which exposes the surface of said substrate where said collector is to be fabricated; applying a polysilicon layer uniformly over said masking layer and said exposed surface of said substrate; implanting dopant ions into said polysilicon layer and thereafter diffusing said implanted dopant ions from said polysilicon layer through said window into a relatively deep region of said semiconductor body under said window; oxidizing said polysilicon layer and a relatively shallow surface portion of said deep region into which said dopant ions diffused so as to form a single integrated oxide layer out of said masking layer and said polysilicon layer and said surface portion of said deep region; and removing said single integrated oxide layer in a single step while retaining the remaining portion of said deep region into which said dopant atoms diffused as said buried collector.
Claim 2
Dependent Claim
176 words
A process for producing a buried collector for a bipolar transistor in a semiconductor body comprising: applying a dopant impermeable oxide masking layer onto the surface of said semiconductor body, said masking layer having a window therein which exposes the surface of said substrate where said collector is to be fabricated; applying a polysilicon layer uniformly over said masking layer and said exposed surface of said substrate; implanting dopant ions into said polysilicon layer and thereafter diffusing said implanted dopant ions from said polysilicon layer through said window into a relatively deep region of said semiconductor body under said window; oxidizing said polysilicon layer and a relatively shallow surface portion of said deep region into which said dopant ions diffused so as to form a single integrated oxide layer out of said masking layer and said polysilicon layer and said surface portion of said deep region; and removing said single integrated oxide layer in a single step while retaining the remaining portion of said deep region into which said dopant atoms diffused as said buried collector.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-06-20 | 1986-12-20 | 1987-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-06-20 | 1990-12-20 | 1991-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-06-20 | 1994-12-20 | 1995-06-21 | $7700.00 | Window Closed / Lapsed |