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US4450465A Expired / Lapsed US ⏱️ 0.0 years remaining

Radiation transmissive electrode structure

Assignee: General Electric Co
•
Filing: 1981-09-23
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Granted: 1984-05-22
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Expires: 2001-09-23
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Abstract

Abstract In semiconductor imaging apparatus a composite electrode structure which transmits a high percentage of the radiation incident thereon and which also has high electrical conductivity is provided as the first level of a two level electrode structure.

Inventors

  • 👤 Joseph M. Pimbley
  • 👤 Herbert R. Philipp

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 01:59
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/154; H10F77/00; H10F77/20; H10F77/206

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 222 words
A radiation sensing array comprising a substrate of semiconductor material having a major surface, said substrate having a plurality of surface regions arranged in a line, a thick layer of insulating material having a plurality of thin portions overlying said major surface, each thin portion in registry with a respective one of said surface regions, each thin portion including a first part centrally located therein, a second part contiguous with one side of said first part, and a third part contiguous with the other side of said first part, a first strip of a conductive material of high electrical conductivity having electrode portions overlying first parts of the thin portions of said thick layer of insulating material, a second strip of doped polycrystalline silicon having electrode portions overlying said first strip and in contact therewith and second and third parts of said thin portions of said thick layer of insulating material, said electrode portions of said first strip and said second strip constituting the conductors of a plurality of conductor-insulator-semiconductor capacitors formed with the thin portions of said insulating material and said surface regions of said substrate, said second strip being substantially wider than said first strip, said second strip being substantially thinner than said first strip, means for making electrical connections to said substrate and to said first and second strips.
Claim 2
Dependent Claim 222 words
A radiation sensing array comprising a substrate of semiconductor material having a major surface, said substrate having a plurality of surface regions arranged in a line, a thick layer of insulating material having a plurality of thin portions overlying said major surface, each thin portion in registry with a respective one of said surface regions, each thin portion including a first part centrally located therein, a second part contiguous with one side of said first part, and a third part contiguous with the other side of said first part, a first strip of a conductive material of high electrical conductivity having electrode portions overlying first parts of the thin portions of said thick layer of insulating material, a second strip of doped polycrystalline silicon having electrode portions overlying said first strip and in contact therewith and second and third parts of said thin portions of said thick layer of insulating material, said electrode portions of said first strip and said second strip constituting the conductors of a plurality of conductor-insulator-semiconductor capacitors formed with the thin portions of said insulating material and said surface regions of said substrate, said second strip being substantially wider than said first strip, said second strip being substantially thinner than said first strip, means for making electrical connections to said substrate and to said first and second strips.
Claim 3
Dependent Claim 21 words
The combination of claim 1 in which said first strip is constituted of a high conductivity, high melting temperature metallic material.
Claim 4
Dependent Claim 89 words
The combination of claim 1 including a layer of silicon dioxide overlying said second strip of doped polycrystalline silicon, each of said thin portions of said thick layer of insulation having a fourth part contiguous with said second part and a fifth part contiguous with said third part, a third strip of doped polycrystalline silicon orthogonal to said second strip and having electrode portions overlying said fourth and fifth parts of said thin portions of said thick layer of insulation, means for making electrical connections to said third strip.
Claim 5
Dependent Claim 12 words
The combination of claim 1 in which said semiconductor material is silicon.
Claim 6
Dependent Claim 12 words
The combination of claim 2 in which said metallic material is molybdenum.

References Cited (Backward Citations)

US3988613A Cited
US4024562A Cited
US4329706A Cited
US4323912A Cited
US4321614A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-05-22 1987-11-21 1988-05-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-05-22 1991-11-21 1992-05-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-05-22 1995-11-21 1996-05-22 $7700.00 Window Closed / Lapsed

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