US4443532A
Expired / Lapsed
US
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Induced crystallographic modification of aromatic compounds
Assignee: AT&T Inc
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Filing: 1981-07-29
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Granted: 1984-04-17
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Expires: 2001-07-29
Abstract
Abstract Materials that change crystal structure upon radiation with a beam of electrons have been found. These materials, such as perylene dianhydride, naphthalene dianhydride, and perylene tetracarboxylic diimide based compounds undergo a transformation from one crystalline structure to another upon exposure to energetic electrons. This transformation causes a change in optical, electrical, and solubility properties. In this manner, these materials are useful as resists for delineating patterns, as optical storage media, and/or in processes for producing patterns of conductive materials such as employed in semiconductor technology.
Inventors
- 👤 David C. Joy
- 👤 Martin L. Kaplan
- 👤 Paul H. Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:29
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0045; H; H10; H10K; H10K85/00; H10K85/60; H10K85/615; H10K85/621
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
63 words
An exposed energy-sensitive body comprising an energy-sensitive material that has been exposed and that contacts a substrate characterized in that said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 2
Dependent Claim
63 words
An exposed energy-sensitive body comprising an energy-sensitive material that has been exposed and that contacts a substrate characterized in that said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 3
Dependent Claim
70 words
An exposed energy-sensitive body comprising an energy-sensitive material that has been exposed and that contacts a substrate characterized in that said substrate comprises a semiconductor material and said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 4
Dependent Claim
70 words
An exposed energy-sensitive body comprising an energy-sensitive material that has been exposed and that contacts a substrate characterized in that said substrate comprises a semiconductor material and said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 5
Dependent Claim
13 words
The body of claim 2 wherein said semiconductor material comprises silicon or InP.
Claim 6
Dependent Claim
12 words
The body of claim 2 wherein said substrate comprises a silicon device.
Claim 7
Dependent Claim
67 words
The product of the process comprising the steps of exposing an energy-sensitive body to energy characterized in that said energy-sensitive body comprises an energy-sensitive material contacting a substrate wherein said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, whereby said energy-sensitive material undergoes a crystal structure change upon treatment with said energy.
Claim 8
Dependent Claim
67 words
The product of the process comprising the steps of exposing an energy-sensitive body to energy characterized in that said energy-sensitive body comprises an energy-sensitive material contacting a substrate wherein said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, whereby said energy-sensitive material undergoes a crystal structure change upon treatment with said energy.
Claim 9
Dependent Claim
12 words
The product of claim 5 wherein said substrate comprises a semiconductor material.
Claim 10
Dependent Claim
13 words
The product of claim 6 wherein said semiconductor material comprises silicon or InP.
Claim 11
Dependent Claim
12 words
The product of claim 6 wherein said substrate comprises a silicon device.
Claim 12
Dependent Claim
63 words
The process comprising the steps of exposing an energy-sensitive body to energy wherein said energy-sensitive body comprises an energy-sensitive material contacting a substrate characterized in that said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide, and combinations thereof, whereby said composition undergoes a crystal structure change upon treatment with said energy.
Claim 13
Dependent Claim
63 words
The process comprising the steps of exposing an energy-sensitive body to energy wherein said energy-sensitive body comprises an energy-sensitive material contacting a substrate characterized in that said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide, and combinations thereof, whereby said composition undergoes a crystal structure change upon treatment with said energy.
Claim 14
Dependent Claim
80 words
A process for producing an exposed energy-sensitive body comprising the steps of subjecting said energy-sensitive body to energy which produces a crystal structure change characterized in that said energy-sensitive body comprising an energy-sensitive material contacting a substrate, said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 15
Dependent Claim
80 words
A process for producing an exposed energy-sensitive body comprising the steps of subjecting said energy-sensitive body to energy which produces a crystal structure change characterized in that said energy-sensitive body comprising an energy-sensitive material contacting a substrate, said energy-sensitive material comprises a composition chosen from the group consisting of 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic diimide and combinations thereof, wherein at least a portion of said composition has undergone a crystal structure change upon treatment with said energy.
Claim 16
Dependent Claim
12 words
The process of claim 10 wherein said substrate comprises a semiconductor material.
Claim 17
Dependent Claim
13 words
The process of claim 11 wherein said semiconductor material comprises silicon or InP.
Claim 18
Dependent Claim
12 words
The process of claim 11 wherein said substrate comprises a silicon device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-04-17 | 1987-10-17 | 1988-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-04-17 | 1991-10-17 | 1992-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-04-17 | 1995-10-17 | 1996-04-17 | $7700.00 | Window Closed / Lapsed |