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US4312935A Expired / Lapsed US ⏱️ 0.0 years remaining

Class of E-beam resists based on conducting organic charge transfer salts

Assignee: International Business Machines Corp
•
Filing: 1980-12-08
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Granted: 1982-01-26
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Expires: 2000-12-08
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Abstract

Abstract Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.

Inventors

  • 👤 Edward M. Engler
  • 👤 John D. Kuptsis
  • 👤 Robert G. Schad
  • 👤 Yaffa Tomkiewicz

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 22:03
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0045; G03F7/038; G03F7/039

Claims Analysis

Total Claims: 37
Claim 1
Independent Claim 125 words
A method for forming negative resist images including the steps of: (a) applying onto a substrate a uniform solid film of a conducting organic charge transfer material selected from the group consisting of halogen salts of; tetrathiafulvalene and its alkyl derivatives, tetraselenafulvalene and its alkyl derivatives, tetrathiatetracenes, tetraselenatetracenes, dithiadiselenatetracenes, tetramethylphenylenediamine, tetraselenanaphthalene, tetrathianaphthalene, dithiadiselenanaphthalene, dithiopyran, tetramethyldithiopyran, tetraphenyldithiopyran, diselenapyran, tetramethyldiselenapyran, tetraphenyldiselenapyran, dipyran, phthalocyanines and porphyrins and wherein said halogen is selected from chlorine bromine and iodine, and (b) exposing said film to an electron-beam in a predetermined pattern, said electron-beam having sufficient energy and current density to cause cross-linking in exposed areas of said film; and (c) treating the unexposed areas of said film with a solvent to remove said areas whereby a negative image is formed.
Claim 2
Independent Claim 125 words
A method for forming negative resist images including the steps of: (a) applying onto a substrate a uniform solid film of a conducting organic charge transfer material selected from the group consisting of halogen salts of; tetrathiafulvalene and its alkyl derivatives, tetraselenafulvalene and its alkyl derivatives, tetrathiatetracenes, tetraselenatetracenes, dithiadiselenatetracenes, tetramethylphenylenediamine, tetraselenanaphthalene, tetrathianaphthalene, dithiadiselenanaphthalene, dithiopyran, tetramethyldithiopyran, tetraphenyldithiopyran, diselenapyran, tetramethyldiselenapyran, tetraphenyldiselenapyran, dipyran, phthalocyanines and porphyrins and wherein said halogen is selected from chlorine bromine and iodine, and (b) exposing said film to an electron-beam in a predetermined pattern, said electron-beam having sufficient energy and current density to cause cross-linking in exposed areas of said film; and (c) treating the unexposed areas of said film with a solvent to remove said areas whereby a negative image is formed.
Claim 3
Dependent Claim 32 words
A method according to claim 1 wherein said electron-beam has an energy of about 5 KeV to about 30 KeV and a current density of at least 10 -4 coulombs/cm 2 .
Claim 4
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetrathiafulvalene.
Claim 5
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetraselenafulvalene.
Claim 6
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetrathiatetracene.
Claim 7
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of diselenadithiafulvalene.
Claim 8
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of dimethyltetrathiafulvalene.
Claim 9
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of dimethyltetraselenafulvalene.
Claim 10
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of dimethyldiselenadithiafulvalene.
Claim 11
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethyltetrathiafulvalene.
Claim 12
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethyltetraselenafulvalene.
Claim 13
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethyldiselenadithiafulvalene.
Claim 14
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of hexamethylenetetrathiafulvalene.
Claim 15
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of hexamethylenetetraselenafulvalene.
Claim 16
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of hexamethylenediselenadithiafulvalene.
Claim 17
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetrathianaphthalene.
Claim 18
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetraselenanaphthalene.
Claim 19
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of diselenadithianaphthalene.
Claim 20
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetraselenatetracene.
Claim 21
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of perylene.
Claim 22
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of dithiopyran.
Claim 23
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethyldithiopyran.
Claim 24
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetraphenyldithiopyran.
Claim 25
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of diselenapyran.
Claim 26
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethyldiselenapyran.
Claim 27
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetraphenyldiselenapyran.
Claim 28
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of dipyran.
Claim 29
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of tetramethylphenylenediamine.
Claim 30
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of phthalocyanine.
Claim 31
Dependent Claim 20 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of nickel phthalocyanine.
Claim 32
Dependent Claim 20 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of copper phthalocyanine.
Claim 33
Dependent Claim 20 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of cobalt phthalocyanine.
Claim 34
Dependent Claim 20 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of iron phthalocyanine.
Claim 35
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of octamethyltetrabenzporphyrins.
Claim 36
Dependent Claim 20 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of nickel octamethyltetrabenzporphyrins.
Claim 37
Dependent Claim 19 words
A method according to claim 1 wherein said conducting organic charge transfer material is a halogen salt of diselenadithiatetracene.

References Cited (Backward Citations)

US3425867A Cited
US3671250A Cited
US3697528A Cited
US3690889A Cited
US3736142A Cited
US3779806A Cited
US4036648A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-01-25 1985-07-27 1986-01-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-01-25 1989-07-27 1990-01-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-01-25 1993-07-27 1994-01-26 $7700.00 Window Closed / Lapsed

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