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US4438557A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of using an areal array of tubular electron sources

Assignee: Woodland International Corp
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Filing: 1982-01-27
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Granted: 1984-03-27
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Expires: 2002-01-27
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Abstract

Abstract An areal array of tubular electron sources is disclosed for producing multiple directed electron beams. Sources (10) are located in a parallel array between a conductive back plate (12) at a closed end of the tubes and a conductive face plate (14) having holes therein aligned with the second open end of each of the electrode tubes (10). An electrical current source (30) is connected between the back plate (12) and face plate (14) to resistively heat each of the sources (10) to a temperature high enough for thermionic electron emission. Electron beams (34) are produced from within each of the tubular electrodes (10). Extraction means which may include a magnetic field from a coil (29) and an extraction lens (18) tends to withdraw the electrons from within the sources (10) in an intense, collimated beam (34). Beams (34) are accelerated toward a target (28) through a beam deflection unit (22) having holes (24) associated with each of the electron beams (34 ). Beam deflection plates (26) within each of the holes (24) deflect the electron beams (34) to impact selected points on a target (28).

Inventors

  • 👤 Donald L. Parker
  • 👤 Wilbur A. Porter
  • 👤 Robert C. Rogers

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 20:58
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/13; B; B82; B82Y; B82Y10/00; B82Y40/00; H01J29/00; H01J29/46; H01J31/00; H01J31/08; H01J31/10; H01J31/12; H01J31/128; H01J37/00; H01J37/02; H01J37/04; H01J37/06; H01J37/30; H01J37/317; H01J37/3174; H01J37/3177; H01J2237/00; H01J2237/06; H01J2237/061

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 71 words
A method for irradiating a semiconductor body with a plurality of electron beams for use in the fabrication of integrated circuits, comprising the steps of: generating a plurality of parallel electron beams within an evacuated zone which contains said semiconductor body, said electron beams directed toward said semiconductor body; and simultaneously deflecting said electron beams to cause each of said electron beams to track a predetermined pattern on said semiconductor body.
Claim 2
Independent Claim 71 words
A method for irradiating a semiconductor body with a plurality of electron beams for use in the fabrication of integrated circuits, comprising the steps of: generating a plurality of parallel electron beams within an evacuated zone which contains said semiconductor body, said electron beams directed toward said semiconductor body; and simultaneously deflecting said electron beams to cause each of said electron beams to track a predetermined pattern on said semiconductor body.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-03-27 1987-09-26 1988-03-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-03-27 1991-09-26 1992-03-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-03-27 1995-09-26 1996-03-27 $7700.00 Window Closed / Lapsed

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