Patent US4436581A successfully refreshed from Google Patents.
US4436581A
Expired / Lapsed
US
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Uniform etching of silicon (doped and undoped) utilizing ions
Assignee: Hitachi Ltd
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Filing: 1982-04-20
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Granted: 1984-03-13
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Expires: 2002-04-20
Abstract
Abstract A plurality of silicon regions different in impurity concentration from each other are simultaneously subjected to dry etching in such a manner that neutral particles in a plasma do not substantially participate in etching and therefore etching is performed substantially by ions. Thus, the silicon regions different in impurity concentration from each other can be etched at substantially the same etching rate, independently of impurity concentration.
Inventors
- 👤 Sadayuki Okudaira
- 👤 Hiroji Saida
- 👤 Yoshio Sakai
- 👤 Shigeru Nishimatsu
- 👤 Keizo Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:16
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
87 words
In a dry etching method for simultaneously etching a plurality of silicon regions different in impurity concentration from each other, by bringing said silicon regions into contact with a plasma, the improvement comprising a step of performing dry etching, in a magneto-microwave etching apparatus, for said silicon regions substantially only by ions contained in said plasma, whereby each of said plurality of silicon regions different in impurity concentration from each other is etched at substantially the same etching rate to provide etching to substantially the same depth.
Claim 2
Dependent Claim
87 words
In a dry etching method for simultaneously etching a plurality of silicon regions different in impurity concentration from each other, by bringing said silicon regions into contact with a plasma, the improvement comprising a step of performing dry etching, in a magneto-microwave etching apparatus, for said silicon regions substantially only by ions contained in said plasma, whereby each of said plurality of silicon regions different in impurity concentration from each other is etched at substantially the same etching rate to provide etching to substantially the same depth.
Claim 3
Dependent Claim
42 words
A dry etching method according to claim 1, wherein said dry etching for said silicon regions is carried out while putting the pressure of freon acting as a reactive gas in a range from about 5×10 -5 to about 3×10 -3 Torr.
Claim 4
Dependent Claim
43 words
A dry etching method according to claim 1, wherein said dry etching for said silicon regions is carried out while putting the pressure of SF 6 acting as a reactive gas in a range from about 2×10 -5 to about 8×10 -4 Torr.
Claim 5
Dependent Claim
39 words
A dry etching method according to claim 2, wherein said freon is at least one selected from a group consisting of CF 4 , C 2 F 6 , C 3 F 8 and C 4 F 10 .
Claim 6
Dependent Claim
23 words
A dry etching method according to claim 1, wherein said plurality of silicon regions different in impurity concentration include a polycrystalline silicon region.
Claim 7
Dependent Claim
25 words
A dry etching method according to claim 1, wherein said plurality of silicon regions different in impurity concentration comprise a plurality of polycrystalline silicon regions.
Claim 8
Dependent Claim
24 words
A dry etching method according to claim 6, wherein said plurality of polycrystalline silicon regions include a non-doped region and a heavily doped region.
Claim 9
Dependent Claim
169 words
In a method of manufacturing a semiconductor LSI device including a memory element which comprises, on a silicon substrate, an underlying layer formed of one of silicon oxide and silicon nitride, and a polycrystalline silicon film including a non-doped area and a doped area, a method of etching comprising the steps of: forming a polycrystalline silicon layer having non-doped regions and doped regions; and selectively etching said polycrystalline silicon layer to form said polycrystalline film and leaving a line pattern, including said doped area and said non-doped area, of substantially equal width, the selective etching including forming a plasma of high density in a microwave electromagnetic field and a static magnetic field at a Freon gas pressure in a range from about 5×10 -5 to about 2×10 -3 Torr, whereby the non-doped regions and doped regions are etched at substantially the same etch rate to provide etching to substantially the same depth in the doped and non-doped regions and to provide doped and non-doped areas of substantially equal width.
Claim 10
Dependent Claim
169 words
In a method of manufacturing a semiconductor LSI device including a memory element which comprises, on a silicon substrate, an underlying layer formed of one of silicon oxide and silicon nitride, and a polycrystalline silicon film including a non-doped area and a doped area, a method of etching comprising the steps of: forming a polycrystalline silicon layer having non-doped regions and doped regions; and selectively etching said polycrystalline silicon layer to form said polycrystalline film and leaving a line pattern, including said doped area and said non-doped area, of substantially equal width, the selective etching including forming a plasma of high density in a microwave electromagnetic field and a static magnetic field at a Freon gas pressure in a range from about 5×10 -5 to about 2×10 -3 Torr, whereby the non-doped regions and doped regions are etched at substantially the same etch rate to provide etching to substantially the same depth in the doped and non-doped regions and to provide doped and non-doped areas of substantially equal width.
Claim 11
Dependent Claim
21 words
A method according to claim 8, wherein said reactive gas comprises CF 4 and said doped area is doped with phosphorus.
Claim 12
Dependent Claim
104 words
In a dry etching method for simultaneously etching a plurality of silicon regions different in impurity concentration from each other, by bringing said silicon regions into contact with a plasma, the improvement comprising providing a plasma, for said dry etching of said plurality of silicon regions, with a sufficiently high density, generated in a sufficiently low-pressure gas, such that the dry etching is carried out substantially only by ions contained in said plasma, whereby each of said plurality of silicon regions different in impurity concentration from each other is etched at substantially the same etching rate to provide etching to substantially the same depth.
Claim 13
Dependent Claim
104 words
In a dry etching method for simultaneously etching a plurality of silicon regions different in impurity concentration from each other, by bringing said silicon regions into contact with a plasma, the improvement comprising providing a plasma, for said dry etching of said plurality of silicon regions, with a sufficiently high density, generated in a sufficiently low-pressure gas, such that the dry etching is carried out substantially only by ions contained in said plasma, whereby each of said plurality of silicon regions different in impurity concentration from each other is etched at substantially the same etching rate to provide etching to substantially the same depth.
Claim 14
Dependent Claim
86 words
A dry etching method according to claim 10, wherein said dry etching for said silicon regions are carried out in one of a plasma etching apparatus and a reactive sputter etching apparatus, each of which is provided with one of means for generating a magnetic field, means for emitting a radioactive ray and means for emitting a laser ray, each of said means acting to increase the density of the plasma as compared to the density of the plasma formed without said one of the means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-13 | 1987-09-12 | 1988-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-13 | 1991-09-12 | 1992-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-13 | 1995-09-12 | 1996-03-13 | $7700.00 | Window Closed / Lapsed |