US4435898A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for making a base etched transistor integrated circuit

Assignee: International Business Machines Corp

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Filing: 1982-03-22

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Granted: 1984-03-13

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Expires: 2002-03-22

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Abstract

Abstract A process is described which permits the fabrication of very narrow base width bipolar transistors. The ability to selectively vary the transistor characteristics provides a degree of freedom for design of integrated circuits. The bipolar transistor is processed up to the point of emitter formation using conventional techniques. But, prior to the emitter formation, the base area which is to be the emitter is dry etched using reactive ion etching. The existing silicon nitride/silicon dioxide layers with the emitter opening therein are used as the etching mask for this reactive ion etching procedure. Once the etching is completed to the desired depth, the normal processing is resumed to form the emitter and rest of the metallization. Since the intrinsic base under the emitter is etched. and the normal emitter is formed afterwards, the etching reduces the base width by an amount approximately equal to the etched depth. The transistor characteristics depend strongly upon the base width so the etching is controlled to very tight dimensions.

Inventors

👤 Santosh P. Gaur
👤 John S. Lechaton
👤 Gurumakonda R. Srinivasan

Bibliographic Details

Application Number —

Jurisdiction US

Data Source google_patents

Last Synchronized 2026-10-23 18:34

CPC Classifications

H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D10/00; H10D10/40; H10D10/441; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242

Claims Analysis

Total Claims: 13

Claim 1

Independent Claim 211 words

A method of making a high performance bipolar transistor in an integrated circuit comprising: providing a monocrystalline silicon substrate having a pattern of regions of said silicon isolated from one another by a dielectric isolation pattern on one major surface of said substrate; providing a subcollector region within said silicon and spaced from said major surface; forming a base region in at least certain of said regions of silicon down to said subcollector region wherein said base region has a surface concentration of more than about 1×10 18 atoms/cc; forming a surface mask opening down to the surface of the said silicon over the area in which a depression is planned to be formed; reactive ion etching to form said depression having a depth between about 70 to 100 nanometers in the portion of said base region wherein an emitter region is planned to be formed; the sides of said depression are substantially vertical without undercutting and the bottom of said depression is substantially planar from one vertical side to another vertical side; forming an emitter region in said etched portion of said base region and heating said emitter region wherein a narrow intrinsic base region is formed; and making contacts to each of the elements of the said bipolar transistor.

Claim 2

Independent Claim 211 words

Claim 3

Dependent Claim 24 words

The method of claim 1 wherein the said base region has a dopant concentration of between about 1×10 19 to 1×10 20 boron ions/cc.

Claim 4

Dependent Claim 43 words

The method of claim 1 wherein the depth of said depression is precisely monitored using a separate test wafer that has its polycrystalline silicon surface simultaneously etched while using a laser light interferometer and the said etching is ended at the designated depth.

Claim 5

Dependent Claim 31 words

The method of claim 1 wherein the said reactive ion etching is accomplished using a mask composed layers of silicon dioxide and silicon nitride covering areas not desired to be etched.

Claim 6

Dependent Claim 25 words

The method of claim 4 wherein the said reactive ion etching ambient is argon and chlorine gas with a pressure less than about 30 millitorr.

Claim 7

Dependent Claim 29 words

The method of claim 3 wherein said test wafer is composed of a silicon dioxide wafer having a polycrystalline silicon layer thereon and said laser is a helium-neon laser.

Claim 8

Dependent Claim 17 words

The method of claim 1 wherein said base doping is boron and said emitter doping is arsenic.

Claim 9

Dependent Claim 16 words

The method of claim 1 wherein said base width is between about 100 to 400 nanometers.

Claim 10

Dependent Claim 18 words

The method of claim 8 wherein the collector base junction depth is between about 500 to 900 nanometers.

Claim 11

Dependent Claim 18 words

The method of claim 1 wherein said emitter-base junction depth is between about 200 nanometers to 500 nanometers.

Claim 12

Dependent Claim 26 words

The method of claim 1 wherein said bipolar transistor is connected with other transistors in said integrated circuit to form a current switch emitter follower circuit.

Claim 13

Dependent Claim 24 words

The method of claim 1 wherein said bipolar transistor is connected with other transistors in said integrated circuit to form a transistor-transistor logic circuit.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1987-03-13	1987-09-12	1988-03-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1991-03-13	1991-09-12	1992-03-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1995-03-13	1995-09-12	1996-03-13	$7700.00	Window Closed / Lapsed

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