Patent US2417689A successfully refreshed from Google Patents.
US3669760A
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Methods of producing diffusion regions in semiconductor bodies
Assignee: Telefunken Electronic GmbH
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Filing: 1970-10-19
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Granted: 1972-06-13
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Expires: 1990-10-19
Abstract
Abstract A METHOD OF PRODUCING A DIFFUSION REGION IN A SEMICONDUCTOR BODY IN WHICH THE SEMICONDUCTOR BODY IS COVERED WITH A INSULATING LAYER, A DIFFUSION WINDOW IN THE INSULATING LAYER AND A RECESS IN THE SEMICONDUCTOR ARE PRODUCED IN ONE OPERATIONL BY ION BOMBARDMENT AND A DIFFUSION REGION IS DIFFUSED INTO THE SEMICONDUCTOR BODY THROUGH A WALL OF THE RECESS.
Inventors
- 👤 Hans-Martin Rein
- 👤 Peter Conze
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 01:27
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/22; H10P50/00; H10P50/20; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/051; Y10S148/106; Y10S148/145
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |