Abstract A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the material. The source is heated to a sufficiently high temperature for a sufficient time to anneal or activate a semiconductor wafer or to epitaxially regrow a thin epitaxial film. The processor is operated by accomplishing the steps of presenting a blackbody radiator in opposition to semiconductor material to be thermally treated, radiatively heating the material to a sufficiently high temperature for a sufficient time to accomplish the desired process result, and cooling and removing the material. In the interval between presentation of successive samples of the material to the source, the source may be shuttered or idled to reduce energy consumption.
A blackbody radiation source for producing a constant planar energy flux including infrared radiation in combination with a support member for positioning a semiconductor wafer in close coupled opposition to said source, said support member comprising refractory metal internal thermal shield means positioned on the opposite side of said source from said wafer, for reflecting said infrared radiation and reducing thermal losses, and said internal shield means comprising a concave shield member for receiving said semiconductor wafer for thermal treatment, thereby providing uniform heating through the thickness of said wafer.
Claim 2
Dependent Claim
90 words
A blackbody radiation source for producing a constant planar energy flux including infrared radiation in combination with a support member for positioning a semiconductor wafer in close coupled opposition to said source, said support member comprising refractory metal internal thermal shield means positioned on the opposite side of said source from said wafer, for reflecting said infrared radiation and reducing thermal losses, and said internal shield means comprising a concave shield member for receiving said semiconductor wafer for thermal treatment, thereby providing uniform heating through the thickness of said wafer.
Claim 3
Dependent Claim
60 words
A blackbody radiation source in combination with said support member in accordance with claim 1 in further combination with leaf spring means positioned along one edge of said internal thermal shield means to serve as a stop and positioning means for said semiconductor wafer so that said semiconductor wafer is presented in close coupled opposition to said blackbody radiation source.
Claim 4
Dependent Claim
56 words
A blackbody radiation source in combination with said support member and leaf spring means in accordance with claim 2 wherein said leaf spring means has a curvature comparable to the curvature of said semiconductor wafer to permit said wafer to rest edgewise against a portion of said leaf spring means over a segment of its circumference.