Patent US4433004A successfully refreshed from Google Patents.
US4433004A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1980-07-07
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Granted: 1984-02-21
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Expires: 2000-07-07
Abstract
Abstract A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.
Inventors
- 👤 Toshio Yonezawa
- 👤 Masaharu Aoyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6324; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/66; H10P14/665; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6929; H10P14/6936; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69397; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
66 words
A method for manufacturing a semiconductor device comprising the steps of forming a metal wiring layer comprising an Al alloy on the surface of a semiconductor substrate, and forming an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y on the surface of said metal wiring layer.
Claim 2
Independent Claim
66 words
A method for manufacturing a semiconductor device comprising the steps of forming a metal wiring layer comprising an Al alloy on the surface of a semiconductor substrate, and forming an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y on the surface of said metal wiring layer.
Claim 3
Dependent Claim
18 words
A method as claimed in claim 1 wherein the formation of said alumina layer is performed by sputtering.
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1 wherein the formation of said alumina layer is performed by chemical vapor deposition.
Claim 5
Dependent Claim
55 words
A method as claimed in claim 1 wherein the formation of said alumina layer is performed by forming an alumina layer on the surface of said metal layer and thereafter implanting ions of at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y in said alumina layer.
Claim 6
Dependent Claim
21 words
A method as claimed in claim 1 wherein said Al alloy is Al-Cu, Al-Cu-Si, Al-Mg, Al-Ni, Al-Cr, Al-Mn, Al-Ti or Al-Y.
Claim 7
Dependent Claim
16 words
A method as in claim 1, wherein said alumina layer is 500 to 15,000 angstroms thick.
Claim 8
Independent Claim
78 words
A method for manufacturing a semiconductor device comprising the steps of: forming on the surface of a semiconductor substrate a metal wiring layer of an Al alloy containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y; and oxidizing said metal wiring layer so as to form on its surface an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from said group.
Claim 9
Independent Claim
78 words
A method for manufacturing a semiconductor device comprising the steps of: forming on the surface of a semiconductor substrate a metal wiring layer of an Al alloy containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y; and oxidizing said metal wiring layer so as to form on its surface an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from said group.
Claim 10
Dependent Claim
16 words
A method as claimed in claim 7 wherein said oxidation treatment is performed by anodic oxidation.
Claim 11
Dependent Claim
21 words
A method as claimed in claim 7 wherein said oxidation treatment is performed by high temperature oxidation in a wet atmosphere.
Claim 12
Dependent Claim
25 words
A method as claimed in claim 1 or 7 further including a step of forming an opening for connecting an electrode in said alumina layer.
Claim 13
Dependent Claim
16 words
A method as in claim 7, wherein said alumina layer is 500 to 15,000 angstroms thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-20 | 1987-08-22 | 1988-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-20 | 1991-08-22 | 1992-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-20 | 1995-08-22 | 1996-02-21 | $7700.00 | Window Closed / Lapsed |