Patent US4431499A successfully refreshed from Google Patents.
US4431499A
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US
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Method of sputter etching a surface
Assignee: ENERGY United States, Department of
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Filing: 1982-02-26
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Granted: 1984-02-14
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Expires: 2002-02-26
Abstract
Abstract The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.
Inventors
- 👤 Charles H. Henager, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:03
CPC Classifications
C; C23; C23F; C23F4/00; F; F24; F24S; F24S70/00; F24S70/20; F24S70/225; F24S70/25; H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; Y; Y02; Y02E; Y02E10/00; Y02E10/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
81 words
A method of preparing a surface with desired reflectance properties comprising providing a chamber with a target, a seed material adjacent to the target, a means for heating the target, and a source of high-energy ions, evacuating the chamber, heating the target to a pre-selected temperature, and bombarding the target and seed material with the high-energy ions to sputter etch the surface of the target, the pre-selected temperature of the target being determinative of the reflectance properties of the etched target.
Claim 2
Independent Claim
81 words
A method of preparing a surface with desired reflectance properties comprising providing a chamber with a target, a seed material adjacent to the target, a means for heating the target, and a source of high-energy ions, evacuating the chamber, heating the target to a pre-selected temperature, and bombarding the target and seed material with the high-energy ions to sputter etch the surface of the target, the pre-selected temperature of the target being determinative of the reflectance properties of the etched target.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the sputter yield of the seed material is lower than that of the target.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein the target is copper and the seed material is stainless steel.
Claim 5
Dependent Claim
17 words
The method of claim 3 wherein the pre-selected temperature is set between 250 K. and 900 K.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein the high-energy ions are noble gas ions.
Claim 7
Dependent Claim
18 words
The method of claim 5 wherein the ions are at an energy level of at least 400 eV.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein the sputtering is of duration between 5 and 10 minutes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |