US4229233A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching
Assignee: International Business Machines Corp
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Filing: 1979-02-05
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Granted: 1980-10-21
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Expires: 1999-02-05
Abstract
Abstract A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.
Inventors
- 👤 Thomas A. Hansen
- 👤 Claude Johnson, Jr.
- 👤 Robert R. Wilbarg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:46
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10F; H10F77/00; H10F77/70; H10F77/703; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
91 words
A method for texturing a silicon substrate to provide an anti-reflective surface thereon comprising the step of: reactive ion etching the surface of said substrate, in the absence of an etch mask on said surface, in a reactive ion etching chamber which contains a chemically active gaseous species which combines with said silicon to form a volatile species such that said surface is subjected to both physical sputtering as well as a chemical reaction with the gaseous species, said etching taking place for a sufficient time to texture said silicon surface.
Claim 2
Independent Claim
91 words
A method for texturing a silicon substrate to provide an anti-reflective surface thereon comprising the step of: reactive ion etching the surface of said substrate, in the absence of an etch mask on said surface, in a reactive ion etching chamber which contains a chemically active gaseous species which combines with said silicon to form a volatile species such that said surface is subjected to both physical sputtering as well as a chemical reaction with the gaseous species, said etching taking place for a sufficient time to texture said silicon surface.
Claim 3
Dependent Claim
20 words
A method as in claim 1 wherein said gaseous species is a mixture of SF 6 and H 2 .
Claim 4
Dependent Claim
22 words
A method as in claim 1 wherein said gaseous species is a mixture of Cl 2 , Ar and O 2 .
Claim 5
Dependent Claim
15 words
A method as in claim 1 wherein said gaseous species is Cl 2 and Ar.
Claim 6
Dependent Claim
24 words
A method as in claim 1 wherein said gaseous species includes a halocarbon gas capable of reacting with silicon to form a volatile species.
Claim 7
Dependent Claim
20 words
A method as in claim 1 further comprising: forming a P/N junction with in said substrate after said texturing step.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-21 | 1984-04-21 | 1984-10-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-21 | 1988-04-21 | 1988-10-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-21 | 1992-04-21 | 1992-10-21 | $7700.00 | Window Closed / Lapsed |