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Etching agent for polyimide type resins and process for etching polyimide type resins with the same

Assignee: Sumitomo Bakelite Co Ltd
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Filing: 1982-11-30
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Granted: 1984-02-14
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Expires: 2002-11-30
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Abstract

Abstract Polyimide-type-resin-etching rate can remarkably be enhanced by combining tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide with at least one member selected from the group consisting of amide compounds represented by the following formula: ##STR1## and amide compounds represented by the following formula: ##STR2## and amine compounds represented by the following formula: H.sub.2 N--R.sub.6 --NH.sub.2 as an etching assistant.

Inventors

  • 👤 Shigenori Yamaoka
  • 👤 Kenmatsu Isozaki
  • 👤 Kyotaro Nishi
  • 👤 Yukihiro Okabe
  • 👤 Mitsutaka Waki
  • 👤 Masuo Mizuno

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 21:38
CPC Classifications
C; C09; C09K; C09K13/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/0346; H05K3/00; H05K3/0011; H05K3/0017

Claims Analysis

Total Claims: 23
Claim 1
Independent Claim 121 words
An etching agent for polyimide type resins consisting essentially of (1) tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide and (2) an etching assistant consisting of (a) at least one amine compound represented by the formula, H.sub.2 N--R.sub.6 --NH.sub.2 wherein R 6 is an alkyl group having one or more carbon atoms and (b) at least one amide compound selected from the group consisting of compounds represented by the formulas: ##STR10## wherein R 1 is a hydrogen atom or an alkyl group having one or more carbon atoms, and R 2 and R 3 are alkyl groups having one or more carbon atoms, and ##STR11## wherein R 4 and R 5 represent alkyl groups having one or more carbon atoms.
Claim 2
Dependent Claim 121 words
An etching agent for polyimide type resins consisting essentially of (1) tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide and (2) an etching assistant consisting of (a) at least one amine compound represented by the formula, H.sub.2 N--R.sub.6 --NH.sub.2 wherein R 6 is an alkyl group having one or more carbon atoms and (b) at least one amide compound selected from the group consisting of compounds represented by the formulas: ##STR10## wherein R 1 is a hydrogen atom or an alkyl group having one or more carbon atoms, and R 2 and R 3 are alkyl groups having one or more carbon atoms, and ##STR11## wherein R 4 and R 5 represent alkyl groups having one or more carbon atoms.
Claim 3
Dependent Claim 43 words
An etching agent according to claim 1, wherein said tetramethylammonium hydroxide is [(CH 3 ) 4 N] + OH - , C 4 H 13 NO.5H 2 O, C 4 H 13 NO.3H 2 O or C 4 H 13 NO.H 2 O.
Claim 4
Dependent Claim 28 words
An etching agent according to claim 1 or 2, wherein said at least one amide compound is selected from the group consisting of N,N-dimethylacetamide, N,N-dimethylformamide, N-methyl-2-pyrrolidone and N-ethyl-2-pyrrolidone.
Claim 5
Dependent Claim 30 words
An etching agent according to claim 1 or 2, wherein said etching agent contains 0.1-200 parts by weight of tetramethylammonium hydroxide per 100 parts by weight of the etching assistant.
Claim 6
Dependent Claim 37 words
An etching agent according to claim 1 or 2, wherein said etching agent contains 0.5-50 parts by weight of tetramethylammonium hydroxide and 20-1,000 parts by weight of water per 100 parts by weight of the etching assistant.
Claim 7
Dependent Claim 28 words
An etching agent according to claim 1 or 2, wherein said at least one amine compound is selected from methylenediamine, ethylenediamine, trimethylenediamine, propylenediamine, tetramethylenediamine, hexamethylenediamine, pentamethylenediamine, and dimethylenediamine.
Claim 8
Dependent Claim 58 words
An ething agent according to claim 1 or 2, wherein said at least one amide compound is selected from the compounds represented by the formula: ##STR12## wherein R 1 is a hydrogen atom or an alkyl group having one or more carbon atoms, and R 2 and R 3 are alkyl groups having one or more carbon atoms.
Claim 9
Dependent Claim 22 words
An etching agent according to claim 6, wherein the amide compound is selected from N,N-dimethylformamide; N,N-diethylformamide; N,N-dimethylacetamide; N,N-dimethylpropionamide; N,N-dimethylbutyramide; N,N-ethylbenzamide; and diethylcarbamazine.
Claim 10
Dependent Claim 20 words
An etching agent according to claim 8, wherein said at least one amine compound is selected from ethylenediamine and hexamethylenediamine.
Claim 11
Dependent Claim 13 words
An etching agent according to claim 6, wherein the amide compound is N,N-dimethylacetamide.
Claim 12
Dependent Claim 154 words
A process for etching a polyimide type resin which comprises contacting an etching agent consisting essentially of (1) tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide and (2) an etching assistant consisting of (a) at least one amine compound represented by the formula, H.sub.2 N--R.sub.6 --NH.sub.2, wherein R 6 is an alkyl group having one or more carbon atoms, and (b) at least one amide compound selected from the group consisting of compound represented by the formula ##STR13## wherein R 1 is a hydrogen atom or an alkyl group having one or more carbon atoms and R 2 and R 3 are alkyl groups having one or more carbon atoms, and the formula ##STR14## wherein R 4 and R 5 represent alkyl groups having one or more carbon atoms, with a coating or film of the polyimide type resin to etch a part of said coating or film of the polyimide type resin.
Claim 13
Dependent Claim 154 words
A process for etching a polyimide type resin which comprises contacting an etching agent consisting essentially of (1) tetramethylammonium hydroxide or an aqueous solution of tetramethylammonium hydroxide and (2) an etching assistant consisting of (a) at least one amine compound represented by the formula, H.sub.2 N--R.sub.6 --NH.sub.2, wherein R 6 is an alkyl group having one or more carbon atoms, and (b) at least one amide compound selected from the group consisting of compound represented by the formula ##STR13## wherein R 1 is a hydrogen atom or an alkyl group having one or more carbon atoms and R 2 and R 3 are alkyl groups having one or more carbon atoms, and the formula ##STR14## wherein R 4 and R 5 represent alkyl groups having one or more carbon atoms, with a coating or film of the polyimide type resin to etch a part of said coating or film of the polyimide type resin.
Claim 14
Dependent Claim 27 words
An etching process according to claim 11, wherein said coating of film of the polyimide type resin is of a cured product of a polyimide type resin.
Claim 15
Dependent Claim 27 words
An etching process according to claim 11, wherein said coating or film of the polyimide type resin is of a semi-cured product of a polyimide type resin.
Claim 16
Dependent Claim 30 words
An etching process according to claim 11, 12 or 13, wherein said coating or film of the polyimide type resin is a protecting film on the surface of a semi-conductor.
Claim 17
Dependent Claim 35 words
An etching process according to claim 11, 12 or 13, wherein said coating or film of the polyimide type resin is a polyimide type resin film of carrier tape of IC, LSI or the like.
Claim 18
Dependent Claim 36 words
An etching process according to claim 11, 12 or 13, wherein the contact of said coating or film of the polyimide type resin with said etching agent is effected by immersing the former in the latter.
Claim 19
Dependent Claim 32 words
An etching process according to claim 14, wherein the contact of said coating or film of polyimide type resin with said etching agent is effected by immersing the former in the latter.
Claim 20
Dependent Claim 36 words
An etching process according to claim 11, 12 or 13, wherein the contact of said coating or film of the polyimide type resin with said etching agent is effected by spraying the latter against the former.
Claim 21
Dependent Claim 32 words
An etching process according to claim 14, wherein the contact of said coating or film of polyimide type resin with said etching agent is effected by spraying the latter against the former.
Claim 22
Dependent Claim 17 words
An etching process according to claim 16, wherein said etching agent has a temperature of 40°-80° C.
Claim 23
Dependent Claim 17 words
An etching process according to claim 18, wherein said etching agent has a temperature of 40°-80° C.

References Cited (Backward Citations)

US3361589A Cited
US3871930A Cited
US4369090A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-02-13 1987-08-15 1988-02-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-02-13 1991-08-15 1992-02-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-02-13 1995-08-15 1996-02-14 $7700.00 Window Closed / Lapsed

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