US4431477A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma etching with nitrous oxide and fluoro compound gas mixture
Assignee: Matheson Tri-Gas Inc
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Filing: 1983-07-05
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Granted: 1984-02-14
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Expires: 2003-07-05
Abstract
Abstract A process is disclosed for use in the manufacture of multilayer thin film integrated circuits for selective removal of specific layers, and a composition of matter useful in the process for selective etching of polysilicon and silicon nitrides during the manufacture of thin film integrated circuits. A multi-layer thin film integrated circuit is exposed to a plasma formed from a gaseous mixture of nitrous oxide and a fluoro compound. The nitrous oxide preferably comprises between 2.5% and 9.0% of the mixture and the fluoro compound preferably comprises between 91.0% and 97.5% of the mixture.
Inventors
- 👤 John Zajac
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:00
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
49 words
A process for use in the manufacture of multi-layer thin film integrated circuits for selective removal of specific layers, comprising the step of: exposing the multi-layer thin film integrated circuit to a plasma formed from a gaseous mixture of nitrous oxide and a fluoro compound, exclusive of any dilutents.
Claim 2
Dependent Claim
49 words
A process for use in the manufacture of multi-layer thin film integrated circuits for selective removal of specific layers, comprising the step of: exposing the multi-layer thin film integrated circuit to a plasma formed from a gaseous mixture of nitrous oxide and a fluoro compound, exclusive of any dilutents.
Claim 3
Dependent Claim
19 words
A process as defined in claim 1 wherein the nitrous oxide comprises from 2.5% to 9.0% of said mixture.
Claim 4
Dependent Claim
19 words
A process as defined in claim 1 wherein the nitrous oxide comprises from 6.0% to 8.0% of said mixture.
Claim 5
Dependent Claim
16 words
A process as defined in claim 1 wherein said mixture includes two or more fluoro compounds.
Claim 6
Dependent Claim
14 words
A process as defined in claim 1 wherein said fluoro compound comprises a halocarbon.
Claim 7
Dependent Claim
16 words
A process as defined in claim 5 wherein said fluoro compound comprises a halocarbon containing chlorine.
Claim 8
Dependent Claim
14 words
A process as defined in claim 5 wherein said fluoro compound comprises carbon tetrafluoride.
Claim 9
Dependent Claim
15 words
A process as defined in claim 1 wherein said fluoro compound comprises an inorganic halide.
Claim 10
Dependent Claim
64 words
A composition of matter useful in the process for selective etching of poly silicon and silicon nitrides during the manufacture of thin film integrated circuits, comprising: a gaseous mixture of nitrous oxide and a fluoro compound, wherein the nitrous oxide comprises between 2.5% and 9.0% of the mixture and the fluoro compound comprises between 91.0% and 97.5% of the mixture, exclusive of any dilutents.
Claim 11
Dependent Claim
64 words
A composition of matter useful in the process for selective etching of poly silicon and silicon nitrides during the manufacture of thin film integrated circuits, comprising: a gaseous mixture of nitrous oxide and a fluoro compound, wherein the nitrous oxide comprises between 2.5% and 9.0% of the mixture and the fluoro compound comprises between 91.0% and 97.5% of the mixture, exclusive of any dilutents.
Claim 12
Dependent Claim
17 words
A composition of matter as defined in claim 9 wherein the mixture includes a single fluoro compound.
Claim 13
Dependent Claim
18 words
A composition of matter as defined in claim 9 wherein the mixture includes two or more fluoro compounds.
Claim 14
Dependent Claim
34 words
A composition of matter as defined in claim 9 wherein the nitrous oxide comprises between 6.0% and 8.0% of the mixture and the fluoro compound comprises between about 92% and 94% of the mixture.
Claim 15
Dependent Claim
16 words
A composition of matter as defined in claim 9 wherein said fluoro compound comprises a halocarbon.
Claim 16
Dependent Claim
16 words
A composition of matter as defined in claim 6 wherein the fluoro compound comprises carbon tetrafluoride.
Claim 17
Dependent Claim
18 words
A composition of matter as defined in claim 13 wherein said fluoro compound comprises a halocarbon containing chlorine.
Claim 18
Dependent Claim
17 words
A composition of matter as defined in claim 9 wherein said fluoro compound comprises an inorganic halide.
Claim 19
Dependent Claim
16 words
A composition of matter as defined in claim 12 wherein the inorganic halide comprises carbon tetrafluoride.
Claim 20
Dependent Claim
16 words
A composition of matter as defined in claim 12 wherein the inorganic halide comprises sulfur hexafluoride.
Claim 21
Dependent Claim
16 words
A composition of matter as defined in claim 12 wherein the inorganic halide comprises nitrogen trifluoride.
References Cited (Backward Citations)
US4374699A
Cited
US4381967A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |